Patents by Inventor Kyong-moo Mang

Kyong-moo Mang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of programming nonvolatile memory cells by floating drain or source regions associated therewith
    Patent number: 6246607
    Abstract: A nonvolatile memory device in which an electrically conductive “program assist plate” is formed over the nonvolatile memory cells. Appropriate voltages are applied to the program assist plate to greatly increase the cell coupling ratio, thereby reducing the program and erase voltages, and increasing the speed of operation. The manufacturing process is simple, and it results in a more planar structure which facilitates subsequent manufacturing processes.
    Type: Grant
    Filed: May 23, 2000
    Date of Patent: June 12, 2001
    Assignee: Samsung Electronics, Co.
    Inventors: Kyong-moo Mang, Jung-dal Choi
  • Method of manufacturing non-volatile memory device
    Patent number: 6180457
    Abstract: A method of manufacturing a non-volatile memory device is provided. According to an aspect of this method, an isolation layer is formed on a semiconductor substrate including a cell array part and a peripheral circuit part. A floating gate pattern is formed exposing the semiconductor substrate in the peripheral circuit part with a tunnel oxide layer interposed between the floating gate pattern and the semiconductor substrate in the cell array part, and an interlayer insulating layer covering the floating gate pattern is formed. A control gate layer is formed, which covers the interlayer insulating layer and the semiconductor substrate in the peripheral circuit part while interposing a gate oxide layer between the control gate layer and the semiconductor substrate.
    Type: Grant
    Filed: September 24, 1999
    Date of Patent: January 30, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Wang-chul Shin, Jeong-eui Kang, Kyong-moo Mang
  • Method of manufacturing a nonvolatile memory device having a program-assist plate
    Patent number: 6093605
    Abstract: A nonvolatile memory device in which an electrically conductive "program assist plate" is formed over the nonvolatile memory cells. Appropriate voltages are applied to the program assist plate to greatly increase the cell coupling ratio, thereby reducing the program and erase voltages, and increasing the speed of operation. The manufacturing process is simple, and it results in a more planar structure which facilitates subsequent manufacturing processes.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: July 25, 2000
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Kyong-moo Mang, Jung-dal Choi
  • Nonvolatile memory device having a program-assist plate
    Patent number: 5877980
    Abstract: A nonvolatile memory device in which an electrically conductive "program assist plate" is formed over the nonvolatile memory cells. Appropriate voltages are applied to the program assist plate to greatly increase the cell coupling ratio, thereby reducing the program and erase voltages, and increasing the speed of operation. The manufacturing process is simple, and it results in a more planar structure which facilitates subsequent manufacturing processes.
    Type: Grant
    Filed: March 26, 1997
    Date of Patent: March 2, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyong-moo Mang, Jung-dal Choi