Abstract: An optical device includes a support portion a movable unit and a pair of torsion bars disposed on both sides of the movable unit on a first axis. The movable unit includes a main body portion, a ring-shaped portion surrounding the main body portion when viewed from a predetermined direction perpendicular to the first axis, two connection portions connecting the main body portion and the ring-shaped portion to each other, and a rib portion provided to the main body portion. Each of the two connection portions includes two connection regions that are separated from each other by a space and the each of the two connection region connects the main body portion and the ring-shaped portion to each other. The rib portion includes four extending portions radially extending between a center of the main body portion and the four connection regions respectively when viewed from the predetermined direction.

Abstract: A mirror unit 2 includes a mirror device 20 including a base 21 and a movable mirror 22, an optical function member 13, and a fixed mirror 16 that is disposed on a side opposite to the mirror device 20 with respect to the optical function member 13. The mirror device 20 is provided with a light passage portion 24 that constitutes a first portion of an optical path between the beam splitter unit 3 and the fixed mirror 16. The optical function member 13 is provided with a light transmitting portion 14 that constitutes a second portion of the optical path between the beam splitter unit 3 and the fixed mirror 16. A second surface 21b of the base 21 and a third surface 13a of the optical function member 13 are joined to each other.

Abstract: A semiconductor laser comprises a window structure part including a low resistance active layer formed in end face regions, to have a lower resistance than an active layer located inward with respect to the end face regions. A length between the front end of the contact layer and the front end face is longer by 10 ?m or more than a length of a front-end-face side window structure part, and is shorter than a length between the front end face and the rear end of the contact layer. A length between an end of a rear side electrode on the side of the front end face and the front end face is 1.2 times or more a substrate thickness of a substrate, and is shorter than a length between the front end face and an end of the rear side electrode on the side of the rear end face.

Abstract: A method for manufacturing a semiconductor device includes: heating solder to wetly spread toward a first end face or a second end face of a submount substrate under restriction on the wet spreading by a burr to form an extending part, so that the extending part directly connects a laser chip and a barrier layer.

Abstract: A semiconductor laser device is configured so that, on at least one of the respective opposing surfaces of a semiconductor laser chip and a sub-mount and the respective opposing surfaces of the sub-mount and a heatsink, one or more treatment regions are provided where adhesion of a bonding material or bonding material used for their bonding is reduced, wherein the one or more treatment regions are placed to define, in a traveling direction of light, different coverages depending on a position in an array direction of multiple light emitting regions.

Abstract: A laser device (3) emits laser light. A lens cap (4) covers the laser device (3). A lens (5) is built in the lens cap (4) and collects or collimates the laser light. A flat surface (7) perpendicular to an optical axis (6) of the laser light is provided in an upper surface of the lens (5).

Abstract: A semiconductor laser comprises a window structure part including a low resistance active layer formed in end face regions, to have a lower resistance than an active layer located inward with respect to the end face regions. A length between the front end of the contact layer and the front end face is longer by 10 ?m or more than a length of a front-end-face side window structure part, and is shorter than a length between the front end face and the rear end of the contact layer. A length between an end of a rear side electrode on the side of the front end face and the front end face is 1.2 times or more a substrate thickness of a substrate, and is shorter than a length between the front end face and an end of the rear side electrode on the side of the rear end face.

Abstract: A method for manufacturing a semiconductor device includes: heating solder to wetly spread toward a first end face or a second end face of a submount substrate under restriction on the wet spreading by a burr to form an extending part, so that the extending part directly connects a laser chip and a barrier layer.

Abstract: A laser device (3) emits laser light. A lens cap (4) covers the laser device (3). A lens (5) is built in the lens cap (4) and collects or collimates the laser light. A flat surface (7) perpendicular to an optical axis (6) of the laser light is provided in an upper surface of the lens (5).

Abstract: An optical modulation device includes a first optical modulator having a first capacitance, a second optical modulator having a second capacitance larger than the first capacitance, a first feed path having a first inductance and having one end connected to the first optical modulator, and a second feed path having a second inductance larger than the first inductance and having one end connected to the second optical modulator. In a graph having an abscissa axis of inductances and an ordinate axis of capacitance values, a predetermined range between a predetermined lower limit line and a predetermined upper limit line is set. The first capacitance, the first inductance, the second capacitance, and the second inductance are determined so that a first coordinate determined by the first capacitance and the first inductance and a second coordinate determined by the second capacitance and the second inductance are contained within the predetermined range.

Abstract: A semiconductor laser device includes: a semiconductor laser including a plurality of emission regions into which currents are injected to emit laser beams and first and second major surfaces opposite to each other; and a plurality of first wires bonded to the first major surface of the semiconductor laser, wherein the first major surface of the semiconductor laser has a first stripe region corresponding to one of the plurality of emission regions, and a second stripe region corresponding to another of the plurality of emission regions, and the number of the first wires bonded to the first stripe region is larger than the number of the first wires bonded to the second stripe region.

Abstract: A semiconductor laser device includes: a semiconductor laser including a plurality of emission regions into which currents are injected to emit laser beams and first and second major surfaces opposite to each other; and a plurality of first wires bonded to the first major surface of the semiconductor laser, wherein the first major surface of the semiconductor laser has a first stripe region corresponding to one of the plurality of emission regions, and a second stripe region corresponding to another of the plurality of emission regions, and the number of the first wires bonded to the first stripe region is larger than the number of the first wires bonded to the second stripe region.

Abstract: A laser includes a wavelength selecting element 14 that selectively reflects laser beams with wavelengths ?=?0, ?1, ?2, . . . , ?n (n?1) of different laser oscillation modes from among fundamental oscillation wavelengths of laser beams passing through a wavelength conversion element 13, and the wavelength conversion element 13 that converts the laser beams with the wavelengths ?=?0, ?1, ?2, . . . , ?n (n?1) of different laser oscillation modes reflected by the wavelength selecting element 14 to harmonics. When using a material with a wide gain band as a laser medium 121 of a solid-state laser element 12, a waveguide laser is implemented capable of carrying out high-efficiency wavelength conversion at a plurality of wavelengths within the gain band.

Abstract: In at least one opening of a plurality of openings 10a and 10b, the following inequality is satisfied: x?½·t·(kx/ky) where x represents a minimum distance in a horizontal direction between an end of the one opening and an end of a submount 8, and t represents a thickness of the submount, and in at least one of the other openings different from the one opening, the following inequality is satisfied: x>½·t·(kx/ky).

Abstract: A laser medium 21 is shaped like a plate and has a waveguide structure in a direction of the thickness of a surface thereof perpendicular to the optical axis thereof. A nonlinear material 31 is placed on the optical axis of the laser medium 21 close to the laser medium 21 and has a waveguide structure in the same direction as that of the waveguide structure of the laser medium 21. A ¼ wavelength plate 41 is placed close to one of surfaces, which are perpendicular to the optical axis, of the nonlinear material 31, the one being opposite to a surface close to the laser medium 21.

Abstract: In at least one opening of a plurality of openings 10a and 10b, the following inequality is satisfied: x?½·t·(kx/ky) where x represents a minimum distance in a horizontal direction between an end of the one opening and an end of a submount 8, and t represents a thickness of the submount, and in at least one of the other openings different from the one opening, the following inequality is satisfied: x>½·t·(kx/ky)

Abstract: A laser includes a wavelength selecting element 14 that selectively reflects laser beams with wavelengths ?=?0, ?1, ?2, . . . , ?n (n?1) of different laser oscillation modes from among fundamental oscillation wavelengths of laser beams passing through a wavelength conversion element 13, and the wavelength conversion element 13 that converts the laser beams with the wavelengths ?=?0, ?1, ?2, . . . , ?n (n?1) of different laser oscillation modes reflected by the wavelength selecting element 14 to harmonics. When using a material with a wide gain band as a laser medium 121 of a solid-state laser element 12, a waveguide laser is implemented capable of carrying out high-efficiency wavelength conversion at a plurality of wavelengths within the gain band.

Abstract: An end surface 3b of a solid-state laser element 3 is sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surface 4a of a wavelength conversion element 4 is sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surface 3b and the end surface 4b are arranged in such a way as to be opposite to each other.

Abstract: A laser medium 21 is shaped like a plate and has a waveguide structure in a direction of the thickness of a surface thereof perpendicular to the optical axis thereof. A nonlinear material 31 is placed on the optical axis of the laser medium 21 close to the laser medium 21 and has a waveguide structure in the same direction as that of the waveguide structure of the laser medium 21. A ¼ wavelength plate 41 is placed close to one of surfaces, which are perpendicular to the optical axis, of the nonlinear material 31, the one being opposite to a surface close to the laser medium 21.

Abstract: Because a laser device is constructed in such a way that the laser device includes a solid-state laser element 3 that has gains for plural different wavelengths in plural different axial directions, and an optical element that has a characteristic of making an optical loss increase with increase in light intensity for each of light beams with the wavelengths, and the solid-state laser element 3 and the optical element are constructed in such a way as to be included in a resonator for fundamental waves which are generated by the solid-state laser element 3, and the laser device oscillates at two or more wavelengths, outputted light beams with the plural different wavelengths can be acquired by using the single solid-state laser element 3. As a result, a small, cheap, and easy to produce laser device can be acquired.