Patents by Inventor Kyouichi Mukao

Kyouichi Mukao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8338216
    Abstract: The object of the present invention is to solve problems of treatment time when using an SLS method or continuous-oscillation laser. An indispensable portion is scanned with a laser beam in order to crystallize a semiconductor film by driving a laser and so on in accordance with the positions of islands instead of scanning and irradiating the whole semiconductor film. The present invention makes it possible to omit the time for irradiating a portion to be removed through patterning after crystallizing the semiconductor film with a laser beam and greatly shorten the treatment time for one substrate.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: December 25, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Kyouichi Mukao
  • Publication number: 20100041247
    Abstract: The object of the present invention is to solve problems of treatment time when using an SLS method or continuous-oscillation laser. An indispensable portion is scanned with a laser beam in order to crystallize a semiconductor film by driving a laser and so on in accordance with the positions of islands instead of scanning and irradiating the whole semiconductor film. The present invention makes it possible to omit the time for irradiating a portion to be removed through patterning after crystallizing the semiconductor film with a laser beam and greatly shorten the treatment time for one substrate.
    Type: Application
    Filed: September 3, 2009
    Publication date: February 18, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Akiharu MIYANAGA, Kyouichi MUKAO
  • Patent number: 7588974
    Abstract: The object of the present invention is to solve problems of treatment time when using an SLS method or continuous-oscillation laser. An indispensable portion is scanned with a laser beam in order to crystallize a semiconductor film by driving a laser and so on in accordance with the positions of islands instead of scanning and irradiating the whole semiconductor film. The present invention makes it possible to omit the time for irradiating a portion to be removed through patterning after crystallizing the semiconductor film with a laser beam and greatly shorten the treatment time for one substrate.
    Type: Grant
    Filed: November 1, 2006
    Date of Patent: September 15, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Kyouichi Mukao
  • Publication number: 20080009120
    Abstract: The object of the present invention is to solve problems of treatment time when using an SLS method or continuous-oscillation laser. An indispensable portion is scanned with a laser beam in order to crystallize a semiconductor film by driving a laser and so on in accordance with the positions of islands instead of scanning and irradiating the whole semiconductor film. The present invention makes it possible to omit the time for irradiating a portion to be removed through patterning after crystallizing the semiconductor film with a laser beam and greatly shorten the treatment time for one substrate.
    Type: Application
    Filed: November 1, 2006
    Publication date: January 10, 2008
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Akiharu Miyanaga, Kyouichi Mukao
  • Patent number: 7133737
    Abstract: The object of the present invention is to solve problems treatment time when using an SLS method or continuous-oscillation laser. An indispensable portion is scanned with a laser beam in order to crystallize a semiconductor film by driving a laser and so on in accordance with the positions of islands instead of scanning and irradiating the whole semiconductor film. The present invention makes it possible to omit the time for irradiating a portion to be removed through patterning after crystallizing the semiconductor film with a laser beam and greatly shorten the treatment time for one substrate.
    Type: Grant
    Filed: November 27, 2002
    Date of Patent: November 7, 2006
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Kyouichi Mukao
  • Publication number: 20030153999
    Abstract: The object of the present invention is to solve problems on a substrate treatment time when using an SLS method or continuous-oscillation laser by using a software technique.
    Type: Application
    Filed: November 27, 2002
    Publication date: August 14, 2003
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Akiharu Miyanaga, Kyouichi Mukao
  • Patent number: 6606080
    Abstract: A semiconductor device capable of displaying images having many tones with a high precision and with a high resolution is provided. The semiconductor device is characterized in that the order of m divided video signals changes before they are inputted to buffer circuits, and, after the m divided video signals are outputted from the buffer circuits, the order of the m divided video signals returns to the original order.
    Type: Grant
    Filed: December 20, 2000
    Date of Patent: August 12, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kyouichi Mukao
  • Publication number: 20010045932
    Abstract: A semiconductor device capable of displaying images having many tones with a high precision and with a high resolution is provided. The semiconductor device is characterized in that the order of m divided video signals changes before they are inputted to buffer circuits, and, after the m divided video signals are outputted from the buffer circuits, the order of the m divided video signals returns to the original order.
    Type: Application
    Filed: December 20, 2000
    Publication date: November 29, 2001
    Inventor: Kyouichi Mukao