Abstract: The present invention relates to an organic electroluminescent device comprising at least one light-emitting layer between an anode and a cathode, wherein the light-emitting layer comprises a host and a phosphorescent dopant; the host comprises plural host compounds; at least a first host compound of the plural host compounds has a structure of a nitrogen-containing heterocyclic linker bonded to a nitrogen atom of a carbazole of an indole-carbazole, indene-carbazole, benzofuran-carbazole, or benzothiophene-carbazole residue; and a second host compound has a carbazole-aryl-carbazole or carbazole-carbazole structure. According to the present invention, by using a specific multi-component host different from the conventional organic electroluminescent device, an organic electroluminescent device of significantly improved lifespan is provided.

Abstract: The present invention provides a method of manufacturing a solar cell, the method including: a process of forming a first semiconductor layer on an upper surface of a semiconductor wafer and forming a second semiconductor layer, having a polarity different from a polarity of the first semiconductor layer, on a lower surface of the semiconductor wafer; a process of forming a first transparent conductive layer on an upper surface of the first semiconductor layer to externally expose a portion of the first semiconductor layer and forming a second transparent conductive layer on a lower surface of the second semiconductor layer to externally expose a portion of the second semiconductor layer; and a plasma treatment process on at least one of the first transparent conductive layer and the second transparent conductive layer, wherein the plasma treatment process includes a process of removing the externally exposed portion of the first semiconductor layer and the externally exposed portion of the second semiconduct

Abstract: The present invention provides a method of manufacturing a solar cell, the method including: a process of forming a first semiconductor layer on an upper surface of a semiconductor wafer and forming a second semiconductor layer, having a polarity different from a polarity of the first semiconductor layer, on a lower surface of the semiconductor wafer; a process of forming a first transparent conductive layer on an upper surface of the first semiconductor layer to externally expose a portion of the first semiconductor layer and forming a second transparent conductive layer on a lower surface of the second semiconductor layer to externally expose a portion of the second semiconductor layer; and a plasma treatment process on at least one of the first transparent conductive layer and the second transparent conductive layer, wherein the plasma treatment process includes a process of removing the externally exposed portion of the first semiconductor layer and the externally exposed portion of the second semiconduct

Abstract: An etching apparatus comprises a chamber; a substrate supporter in the chamber; a substrate disposed on the substrate and having one of a notch zone and a flat zone, the substrate having a rim of a circular shape except in the one of the notch zone and the flat zone, wherein the rim of the substrate has a dented shape in the notch zone and a chord shape in the flat zone; a substrate-screening unit having a substantially same shape as the substrate and disposed over the substrate, the substrate-screening unit having a portion corresponding to the one of the notch zone and the flat zone, wherein the substrate-screening unit has a first diameter smaller than or equal to a second diameter of the substrate; a gas injection means supplying gases onto a periphery of the substrate; and a power supply unit supplying an RF (radio frequency) power into the chamber.

Abstract: An etching apparatus includes a chamber, a substrate support in the chamber, a substrate-screening unit over the substrate support, wherein a diameter of the substrate-screening unit is smaller than as or equals to a substrate, a gas injection means injecting gases onto a periphery of the substrate, a power supply unit providing an RF (radio frequency) power into the chamber, and a plurality of sensors sensing intervals between the substrate support and the substrate-screening unit.