Abstract: A power module and a manufacturing method include semiconductor chips, an insulating circuit board including an insulating layer and a first metal layer disposed on a first surface of the insulating layer, and lead frames disposed between the semiconductor chips and the insulating circuit board.

Abstract: The present disclosure provides a method for manufacturing a double-sided cooling type power module including separately patterning a bonding material on a base film into two regions, positioning a semiconductor chip on the patterned bonding material, transferring the patterned bonding material to one surface of the semiconductor chip by pressurizing the semiconductor chip, positioning the bonding material of the semiconductor chip on an upper electrode layer formed on an upper substrate to be in contact with the upper electrode layer, and sintering an upper bonding layer by pressurizing and heating the semiconductor chip. According to the present disclosure, it is possible to separately dispose the bonding material on each of gate and source electrode parts on an upper portion of the chip even without protrusion to directly bond the chip and the substrate.

Abstract: A double-side cooling-type semiconductor device includes a first circuit board and a second circuit board, a semiconductor element bonded to a control electrode of the first circuit board, a first spacer disposed between the first circuit board and the semiconductor element, bonded to the first circuit board, and bonded to the semiconductor element, and a second spacer disposed between the second circuit board and the semiconductor element, bonded to the second circuit board, and bonded to the semiconductor element.

Abstract: A power semiconductor device includes: a semiconductor layer; a well region positioned inside the semiconductor layer and having a first conductive type; a source region positioned on the well region and having a second conductive type; a gate region making contact with a side surface of the well region to surround the well region; and a drift region making contact with bottom surfaces of the well region and the gate region and having the second conductive type. The drift region may include a protrusion region extending from the drift region and making contact with another side surface of the well region.

Abstract: An embodiment of the present disclosure provides a substrate structure applied to a power module. In the substrate structure applied to a power module, the substrate includes an upper substrate and a lower substrate, a plurality of semiconductor devices disposed on the lower substrate, a source signal electrode transmitting a source signal to the semiconductor devices, and a gate signal electrode transmitting a gate signal to the semiconductor devices, one of the source signal electrode or the gate signal electrode is connected to the upper substrate through a conductive column, and a signal transmitted by one of the source signal electrode or the gate signal electrode is transmitted to the semiconductor devices through the upper substrate.

Abstract: An embodiment of the present disclosure provides a substrate structure applied to a power module. In the substrate structure applied to a power module, the substrate includes an upper substrate and a lower substrate, a plurality of semiconductor devices disposed on the lower substrate, a source signal electrode transmitting a source signal to the semiconductor devices, and a gate signal electrode transmitting a gate signal to the semiconductor devices, one of the source signal electrode or the gate signal electrode is connected to the upper substrate through a conductive column, and a signal transmitted by one of the source signal electrode or the gate signal electrode is transmitted to the semiconductor devices through the upper substrate.

Abstract: A vehicle power module for converting power includes a lead frame configured to receive power from outside or to output power to the outside and a substrate configured to be bonded with the lead frame. The substrate includes a pattern layer disposed to be electrically connected to the lead frame, a conductive layer disposed apart from the pattern layer and configured to be electrically grounded, and an insulating layer disposed between the conductive layer and the pattern layer to insulate the pattern layer from the conductive layer. The pattern layer further protrudes toward the lead frame than the insulating layer.

Abstract: A power module of double-faced cooling includes: an upper substrate; a lower substrate on which a plurality of semiconductor chips are disposed; and a first spacer disposed between the upper substrate and the lower substrate, electrically connecting the upper substrate and the lower substrate to each other, and disposed on the lower substrate to be equally distanced from each of the semiconductor chips. Power is supplied to the semiconductor chips on the lower substrate through the upper substrate and the first spacer.

Abstract: A power module of double-faced cooling includes: an upper substrate; a lower substrate on which a plurality of semiconductor chips are disposed; and a first spacer disposed between the upper substrate and the lower substrate, electrically connecting the upper substrate and the lower substrate to each other, and disposed on the lower substrate to be equally distanced from each of the semiconductor chips. Power is supplied to the semiconductor chips on the lower substrate through the upper substrate and the first spacer.

Abstract: A power module capable of increasing structural stability and reliability at high temperatures includes: an upper substrate having a metal layer; a lower substrate spaced apart from the upper substrate and having a metal layer facing the metal layer of the upper substrate; a semiconductor element configured to be disposed between the upper substrate and the lower substrate; and at least one leg portion formed on at least one of the metal layer of the upper substrate and the metal layer of the lower substrate to make the upper substrate and the lower substrate be spaced apart from each other at a predetermined interval, in which the leg portion may be electrically connect the semiconductor element to the metal layer of the upper substrate or the metal layer of the lower substrate.

Abstract: A vehicle power module for converting power includes a lead frame configured to receive power from outside or to output power to the outside and a substrate configured to be bonded with the lead frame. The substrate includes a pattern layer disposed to be electrically connected to the lead frame, a conductive layer disposed apart from the pattern layer and configured to be electrically grounded, and an insulating layer disposed between the conductive layer and the pattern layer to insulate the pattern layer from the conductive layer. The pattern layer further protrudes toward the lead frame than the insulating layer.

Abstract: A power module capable of increasing structural stability and reliability at high temperatures includes: an upper substrate having a metal layer; a lower substrate spaced apart from the upper substrate and having a metal layer facing the metal layer of the upper substrate; a semiconductor element configured to be disposed between the upper substrate and the lower substrate; and at least one leg portion formed on at least one of the metal layer of the upper substrate and the metal layer of the lower substrate to make the upper substrate and the lower substrate be spaced apart from each other at a predetermined interval, in which the leg portion may be electrically connect the semiconductor element to the metal layer of the upper substrate or the metal layer of the lower substrate.

Abstract: A power module capable of increasing structural stability and reliability at high temperatures includes: an upper substrate having a metal layer; a lower substrate spaced apart from the upper substrate and having a metal layer facing the metal layer of the upper substrate; a semiconductor element configured to be disposed between the upper substrate and the lower substrate; and at least one leg portion formed on at least one of the metal layer of the upper substrate and the metal layer of the lower substrate to make the upper substrate and the lower substrate be spaced apart from each other at a predetermined interval, in which the leg portion may be electrically connect the semiconductor element to the metal layer of the upper substrate or the metal layer of the lower substrate.

Abstract: A method for bonding with a silver paste includes coating a semiconductor device or a substrate with the silver paste. The silver paste contains a plurality of silver particles and a plurality of bismuth particles. The method further includes disposing the semiconductor on the substrate and forming a bonding layer by heating the silver paste, wherein the semiconductor and the substrate are bonded to each other by the bonding layer.

Abstract: The present inventive concept relates to a semiconductor device, and more particularly to a semiconductor device that can increase the amount of current by reducing impedance, and a method of manufacturing the semiconductor device.

Abstract: A power module capable of increasing structural stability and reliability at high temperatures includes: an upper substrate having a metal layer; a lower substrate spaced apart from the upper substrate and having a metal layer facing the metal layer of the upper substrate; a semiconductor element configured to be disposed between the upper substrate and the lower substrate; and at least one leg portion formed on at least one of the metal layer of the upper substrate and the metal layer of the lower substrate to make the upper substrate and the lower substrate be spaced apart from each other at a predetermined interval, in which the leg portion may be electrically connect the semiconductor element to the metal layer of the upper substrate or the metal layer of the lower substrate.

Abstract: Disclosed is a method for bonding with a silver paste, the method including: coating a silver paste on a semiconductor device or a substrate, the silver paste containing silver and indium; disposing the semiconductor on the substrate; and heating the silver paste to form a bonding layer, wherein the semiconductor device and the substrate are bonded to each other through the bonding layer, and wherein the indium is contained in the silver paste at 40 mole % or less.

Abstract: A semiconductor device includes: a plurality of n type pillar regions and an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein each corner portion of the trench is in contact with a corresponding n type pillar region.

Abstract: The present inventive concept relates to a semiconductor device, and more particularly to a semiconductor device that can increase the amount of current by reducing impedance, and a method of manufacturing the semiconductor device.

Abstract: A semiconductor device includes: a plurality of n type pillar regions and an n? type epitaxial layer disposed on a first surface of an n++ type silicon carbide substrate; a p type epitaxial layer and an n+ region disposed on the plurality of n type pillar regions and the n?type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the plurality of n type pillar regions and the n?type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein each corner portion of the trench is in contact with a corresponding n type pillar region.