Abstract: The present invention provides a conditioner for CMP pad required for global planarization of wafer to achieve high integration of a semiconductor element. The conditioner for CMP pad includes a metal substrate having abrasive particles fixed thereto, a plurality of abrasive particles fixed to the metal substrate, and a layer of metal binder fixing the abrasive particles to the metal substrate. The abrasive particles include at least one pattern. The pattern includes at least one row of abrasive particles and the abrasive particles include bigger abrasive particles and smaller abrasive particles. In addition, a diameter difference between smaller and bigger abrasive particles is 10 to 40%. The present invention ensures uniform dressing of conditioner, superior dressing efficiency and superior performance reproducibility.