Abstract: A memory card system and related write method are disclosed. The method includes receiving a write request for a predetermined page; performing a write operation on a first log block that corresponds to a first data block including the page; receiving an update request for the page; and performing a write operation on a second log block that corresponds to the first data block. The memory card system includes: at least one non-volatile memory including a data block and a log block for updating the data block; and a memory controller controlling an operation of the non-volatile memory. During a write operation for a predetermined page, the controller controls writing of a first log block corresponding to a first data block including the predetermined page, and controls writing of a second log block during an update operation of the predetermined page.

Abstract: A memory system comprises a plurality of nonvolatile memory devices configured for interleaved access. Programming times are measured and recorded for various memory cell regions of the nonvolatile memory devices, and interleaving units are formed by memory cell regions having different programming times.

Abstract: A data recording method and data recoding device to improve operational reliability of NAND flash memory includes calculating an address to record data, extracting information regarding a memory cell corresponding to the calculated address, selecting a data scrambling method based on the information regarding the memory cell, scrambling the data according to the data scrambling method, and recording the scrambled data on the memory cell. The information regarding the memory cell includes a logical block address, a logical page address, a physical block address, a physical page address of the memory cell, and a program/erase cycle of a memory block corresponding to the memory cell.

Abstract: A memory system comprises a plurality of nonvolatile memory devices configured for interleaved access. Programming times are measured and recorded for various memory cell regions of the nonvolatile memory devices, and interleaving units are formed by memory cell regions having different programming times.

Abstract: A memory card system and related write method are disclosed. The method includes receiving a write request for a predetermined page; performing a write operation on a first log block that corresponds to a first data block including the page; receiving an update request for the page; and performing a write operation on a second log block that corresponds to the first data block. The memory card system includes: at least one non-volatile memory including a data block and a log block for updating the data block; and a memory controller controlling an operation of the non-volatile memory. During a write operation for a predetermined page, the controller controls writing of a first log block corresponding to a first data block including the predetermined page, and controls writing of a second log block during an update operation of the predetermined page.