Abstract: Disclosed is a switch circuit for an ultra-high frequency band, which includes a transistor including a first terminal connected to an input stage, a second terminal connected to an output stage, and a gate terminal, an inductor connected to the transistor in parallel, between the input stage and the output stage, a variable gate driver to apply a gate input voltage to the gate terminal and, an input resistor connected between the variable gate driver and the gate terminal. The variable gate driver adjusts the gate input voltage to be in one of a first voltage level for turning on the transistor and a second voltage level for turning off the transistor. The second voltage level varies depending on a capacitance between the first terminal and the second terminal, when the transistor is in a turn-off state.

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

Abstract: A pedestrian airbag includes: an airbag cushion stored in a pedestrian airbag room located between a roof and a headliner of a vehicle in a folded state, and configured to be deployed to cover both a windshield glass and an A-pillar by being expanded during deployment thereof; and an inflator configured to supply gas to the airbag cushion.

Abstract: The present disclosure relates to a novel PLK1 degradation inducing compound having a structure according to Formula I, a method for preparing the same, and the use thereof. The compounds of the present disclosure exhibit an effect of inducing PLK1 degradation. Therefore, the compounds of the present disclosure may be effectively utilized for preventing or treating PLK1-related diseases.

Abstract: An apparatus for estimating a camera pose according to an embodiment of the present disclosure includes a similar image searcher, a clusterer, and an estimator. The similar image searcher searches for a plurality of images similar to an input image, from among a plurality of previously-stored images, based on the input image. The clusterer creates a cluster including at least some similar images meeting predetermined conditions, from among the plurality of similar images, based on viewpoint data tagged to each of the plurality of similar images. The estimator estimates a pose of a camera that has generated the input image, based on the cluster.

Abstract: A charging control apparatus measures a first temperature of a first secondary battery selected from the plurality of secondary batteries, a second temperature of a coolant flowing into the cooling device, a charging current of the secondary battery pack, a first terminal voltage of the first secondary battery and a second terminal voltage of a second secondary battery closest to the cooling device, estimates a temperature of a temperature estimation point of the second secondary battery from a lumped thermal model having a thermal resistance between two points selected from the temperature estimation point of the second secondary battery, the first temperature measurement point and the second temperature measurement point, and measurement data about temperature, current and voltage, and determines the estimated temperature as a minimum temperature of the secondary battery pack, and varies a charging power provided to the secondary battery pack according to the minimum temperature.

Abstract: An apparatus for embedding a sentence feature vector according to an embodiment includes a sentence acquisitor configured to acquire a first sentence and a second sentence, each including one or more words; a vector extractor configured to extract a first feature vector corresponding to the first sentence and a second feature vector corresponding to the second sentence by independently inputting each of the first sentence and the second sentence into a feature extraction network; and a vector compressor configured to compress the first feature vector and the second feature vector into a first compressed vector and a second compressed vector, respectively, by independently inputting each of the first feature vector and the second feature vector into a convolutional neural network (CNN)-based vector compression network.

Abstract: An optical imaging system includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens having a convex image-side surface, a sixth lens, and a seventh lens disposed in order from an object side, and a distance from the image-side surface of the fifth lens to an object-side surface of the sixth lens is shorter than a distance from an image-side surface of the sixth lens to an object-side surface of the seventh lens.

Abstract: An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

Abstract: The present disclosure relates to a method for carrying out dose delivery quality assurance for high-precision radiation treatment, in which parameters affecting a pass rate of dose delivery quality assurance can be derived through regression analysis, which is a known statistical analysis method, and a pass rate prediction model capable of predicting each parameter and the pass rate of dose delivery quality assurance can be derived, and accordingly, it can be predicted in advance whether dose delivery quality assurance will be passed according to the parameters through the above prediction model, without repeatedly carrying out dose delivery quality assurance according to a patient's treatment plan, and as a result, the efficiency of dose delivery quality assurance can be enhanced, and the time or capacity required for such quality assurance is reduced, such that radiation treatment for an actual patient can be quickly and precisely carried out.

Abstract: A pseudo dual port memory device in which an operating speed is improved and stability is increased is provided. The pseudo dual port memory device may include a memory cell, a pair of bit lines connected to the memory cell, a write driver, a sense amp, and a column multiplexer which is connected to the bit lines, receives a write multiplexer control signal and a read multiplexer control signal, connects the bit lines to the write driver in response to the write multiplexer control signal, and connects the bit lines to the sense amp in response to the read multiplexer control signal. A precharge control signal generation circuit which is connected to the column multiplexer may generate a precharge control signal on the basis of the read and write multiplexer control signals, and a bit line precharge circuit may precharge the bit lines based on the precharge control signal.

Abstract: A lens includes a lens unit having a refractive power; and a first coating layer and a second coating layer formed on either one or both of an object-side surface and an image-side surface of the lens unit in an optical axis direction of the lens unit, wherein a first refractive index of the first coating layer is greater than a second refractive index of the second coating layer.

Abstract: The present disclosure relates to a novel PLK1 degradation inducing compound having a structure according to Formula I, a method for preparing the same, and the use thereof. The compounds of the present disclosure exhibit an effect of inducing PLK1 degradation. Therefore, the compounds of the present disclosure may be effectively utilized for preventing or treating PLK1-related diseases.

Abstract: A lens module includes lenses sequentially arranged from an object side toward an image plane sensor and having respective refractive powers. A second lens of the lenses has a convex object-side surface and a convex image-side surface. A first lens and a third lens of the lenses are symmetrical to each other in relation to the second lens.

Abstract: An optical imaging system includes a first lens having negative refractive power, a second lens having negative refractive power, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens. The first to seventh lenses are sequentially disposed from an object side toward an image side. The third lens and the seventh lens are formed of plastic, and the first lens, the second lens, the fourth lens, the fifth lens, and the sixth lens are formed of glass.

Abstract: An antenna apparatus for drone identification and an operating method thereof are provided. The antenna apparatus includes: a plurality of horizontal directional antennas; a vertical directional antenna positioned at a center of an area surrounded by the plurality of horizontal directional antennas; a beamforming unit controlling beamforming of the vertical directional antenna and the plurality of horizontal antennas to transmit and receive signals in all directions; and a power supply unit for suppling power.

Abstract: A memory system includes: a storage device for storing data; a system memory in which normal firmware and debugging firmware are stored; a firmware implementer for implementing the normal firmware or the debugging firmware; and a controller for controlling the storage device in a normal mode in which the memory system is driven by the normal firmware. When an error detected in the normal mode is uncorrectable, the controller uploads the debugging firmware stored in the system memory to the firmware implementer to change the normal mode to a debugging mode. The firmware implementer performs a debugging operation on the storage device by implementing the uploaded debugging firmware.

Abstract: An image capturing lens system includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens, and a seventh lens sequentially arranged from an object side toward an image side. One or more of the lenses is an aspherical lens made of a glass material, and the sixth lens has positive refractive power.

Abstract: Provided are a battery management system and a battery management method using the same. According to the present invention, it is possible to select high-risk battery cells that are highly likely to be out of an operating voltage range by applying a change amount according to SoH for each of the battery cells to each SoC for each of the battery cells, and calculate the representative SoH of the battery pack based on the selected high-risk battery cells, and then calculate the actual usable capacity of the battery pack.