Abstract: A semiconductor device includes: an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern; a gate structure disposed on the lower pattern; and a source/drain pattern disposed on the lower pattern, and connected to each of the plurality of sheet patterns, wherein the plurality of sheet patterns include a first sheet pattern and a second sheet pattern. The second sheet pattern is disposed between the first sheet pattern and the lower pattern. A first upper width of an upper surface of the first sheet pattern is greater than a first lower width of a bottom surface of the first sheet pattern, and a second upper width of an upper surface of the second sheet pattern is smaller than a second lower width of a bottom surface of the second sheet pattern.

Abstract: Disclosed is a system including a primary access point device which, in operation, simultaneously communicates using a first unlicensed frequency band and a second unlicensed frequency band; and a secondary access point device which, in operation, receives timing information from the primary access point device using the first unlicensed frequency band and communicates with the primary access point device based on the timing information.

Abstract: In an embodiment of the present invention, a proton conductive oxide fuel cell comprising an electrode substrate, a proton conductive oxide electrolyte layer positioned on the electrode substrate, a proton conductive oxide reaction prevention layer positioned on the electrolyte layer, and a proton conductive oxide air electrode layer positioned on the reaction prevention layer, wherein the reaction prevention layer is composed of ABO3-? structured perovskite proton conductive oxide, may be provided.

Abstract: The present invention relates to a 6-(isooxazolidin-2-yl)-N-phenylpyrimidin-4-amine derivative, and a pharmaceutical composition for preventing or treating cancer comprising the compound as an effective component. The compound exhibits high inhibitory activity against an epidermal growth factor receptor (EGFR) variant, or wild-type or variants of one or more of ERBB2 and ERBB4, and thus may be usefully used in the treatment of cancers in which same are expressed. In particular, the compound exhibits excellent inhibitory activity on proliferation of lung cancer cell lines, and thus can be usefully used in the treatment of lung cancer.

Abstract: A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

Abstract: An organic light-emitting device according to the present invention uses a pyrene derivative compound having a characteristic structure as a host in a light-emitting layer to realize a long-lifespan and high-efficiency organic light-emitting device having excellent light-emitting characteristics in terms of lifespan and luminescence efficiency. Accordingly, the organic light-emitting device can be usefully applied, in the industrial aspect, for various display devices such as flat panel, flexible, and wearable displays, as well as lighting devices.

Abstract: A semiconductor device may include a first pattern including any one of a selector layer or a variable resistance layer and a middle electrode layer disposed over any one of the selector layer or the variable resistance layer; and a second pattern disposed over the first pattern and including the other one of the selector layer or the variable resistance layer, wherein a width of the second pattern may be the same as or greater than a width of the first pattern.

Abstract: A composition according to the present invention, when used alone, is capable of inhibiting the growth of anticancer drug-resistant cancer by overcoming anticancer drug resistance or enhancing anticancer drug sensitivity, and when co-administered with an anticancer drug, may be used very effectively for the prevention, alleviation or treatment of various cancers, especially anticancer drug-resistant cancer.

Abstract: A composition for enhancing protein strength according to the present invention contains an aminosilane compound capable of covalent binding with a protein of hair, scalp, skin, nails, leather, or textile, so that the protein and the amino silane compound form a covalent bond, and thus the composition can improve the protein strength enhancement effect and maximize the semi-permanent protein strength enhancement effect.

Abstract: An embodiment discloses a method for controlling a vehicle virtualization structure-based device including the steps of receiving a request for use of a device from at least one container among a plurality of containers; and determining the use of the device according to a type of the device and a type of the container that transmits the request for use.

Abstract: A graphene manufacturing apparatus includes a reaction chamber a substrate supporter configured to structurally support a substrate inside the reaction chamber; a plasma generator configured to generate a plasma inside the reaction chamber; a first gas supply configured to supply an inert gas into the reaction chamber at a first height from an upper surface of the substrate supporter in a height direction of the reaction chamber; a second gas supply configured to supply a carbon source into the reaction chamber at a second height from the upper surface of the substrate supporter in the height direction of the reaction chamber; and a third gas supply configured to supply a reducing gas into the reaction chamber, wherein the first to third gas supply units are disposed at different heights at a third height from the upper surface of the substrate supporter in the height direction of the reaction chamber.

Abstract: Intelligent subscriber identity module (SIM) switching for user equipment (UE) devices is disclosed. The UE may have multiple SIMs for multiple carrier networks (i.e., mobile network operators (MNOs) that provide wireless network infrastructure, such as radio access networks (RANs)) or a universal SIM. It may be desirable to switch between SIMs for various reasons, such as based on network quality criteria, subscription criteria, agreement criteria between MNOs, etc. These criteria may inform a policy for determining which SIM to use.

Abstract: The present invention relates to a context-based QA generation architecture, and an object of the present invention is to generate diverse QA pairs from a single context. To achieve the object, the present invention includes a latent variable generating network including at least one encoder and an artificial neural network (Multi-Layer Perceptron: MLP) and configured to train the artificial neural network using a first context, a first question, and a first answer, and generate a second question latent variable and a second answer latent variable by applying the trained artificial neural network to a second context, an answer generating network configured to generate a second answer by decoding the second answer latent variable, and a question generating network configured to generate a second question based on a second context and the second answer.

Abstract: A method and a device for handover in an earth-moving beam (EMB)-based non-terrestrial network are disclosed. A method of a user equipment (UE) comprises the steps of: receiving, from a first cell of a satellite, first handover configuration information including information about a first cell service timer indicating the time at which a communication service can be provided in the first cell; reducing the first cell service timer according to a first reduction interval; and triggering an intra-satellite (intra-SAT) handover procedure if the first cell service timer has a first critical value or less.

Abstract: A display device comprises a substrate, a first voltage line in a first metal layer on the substrate, a first transistor including a drain electrode in an active layer on the first metal layer and electrically connected to the first voltage line, an active region adjacent to the drain electrode, a source electrode adjacent to the active region, and a gate electrode in a second metal layer on the active layer, and a first capacitor including a first capacitor electrode integrally formed with the gate electrode of the first transistor and having a closed-loop shape, and a second capacitor electrode in the first metal layer and overlapping with the first capacitor electrode.

Abstract: Disclosed is an image processing method. The method includes the steps of receiving an image obtained from a plurality of vehicles positioned on a road, storing the received images according to acquisition information of the received images; determining a reference image and a target image based on images having the same acquisition information among the stored images, performing an image registration using a plurality of feature points extracted from each of the determined reference image and target image, performing a transparency process for each of the reference image and the target image performed with the image registration, extracting static objects from the transparency-processed image, and comparing the extracted static objects with objects on an electronic map pre-stored to updating the electronic map data, when the objects on the electronic map data pre-stored are different from the extracted static objects.

Abstract: A semiconductor device includes: an active area that protrudes from an upper surface of a substrate and extends parallel to the upper surface of the substrate; an element isolating area formed on the substrate and around the active area; a channel formed on an upper surface of the active area; a gate structure that surrounds at least two surfaces of the channel; a spacer formed on both sidewalls of the gate structure; and a source/drain layer in contact with both sidewalls of the channel and insulated from the gate structure by the spacer. The gate structure includes, in a cross-section, a first portion whose width in a first direction increases from an upper portion of the gate structure toward a lower portion closer to the substrate, and a second portion whose width in the first direction remains the same or decreases below the first portion.

Abstract: Intelligent subscriber identity module (SIM) switching for user equipment (UE) devices is disclosed. The UE may have multiple SIMs for multiple carrier networks (i.e., mobile network operators (MNOs) that provide wireless network infrastructure, such as radio access networks (RANs)) or a universal SIM. It may be desirable to switch between SIMs for various reasons, such as based on network quality criteria, subscription criteria, agreement criteria between MNOs, etc. These criteria may inform a policy for determining which SIM to use.

Abstract: In a method and device for cell (re)selection in an EMB-based non-terrestrial network. the method of a UE includes the steps of: configuring a candidate cell set which is a set of one or more neighboring cells having a cell timer value greater than the sum of a cell service timer value of a serving cell and a second value among at least one neighboring cell; selecting a candidate cell among the one or more neighboring cells on the basis of the SAT service timer value of each of the one or more neighboring cells belonging to the candidate cell set; and performing a procedure for configuring a connection with the candidate cell.

Abstract: A semiconductor package includes a first redistribution substrate, a first semiconductor chip on the first redistribution substrate, a heat dissipation layer on the first semiconductor chip and in contact with an upper surface of the first semiconductor chip, a second redistribution substrate on the heat dissipation layer, a molding layer surrounding the first semiconductor chip and the heat dissipation layer between the first redistribution substrate and the second redistribution substrate, through electrodes vertically penetrating the molding layer and electrically connecting the first redistribution substrate and the second redistribution substrate, the through electrodes being spaced apart from the first semiconductor chip and the heat dissipation layer, and dummy patterns vertically penetrating the molding layer and in contact with a side surface of the first semiconductor chip and a side surface of the heat dissipation layer.