Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

Abstract: A degassing apparatus having duplex vacuum vessels for removing impurity gases from molten steel by backflow of molten steel thereby homogenizing molten steel composition. The apparatus includes duplex vacuum vessels of first and second vacuum vessels fixedly arranged at a predetermined interval to a floor which is provided horizontally at a predetermined height from a bottom; first and second ladle carriages arranged to run on first and second rails, respectively, to reciprocate between a treatment position directly under the first and second vacuum vessels and a tapping position where refined molten steel is tapped, each of the first and second ladle carriage loaded with a corresponding one of first and second ladles; and first and second lifting cylinders each for raising and lowering each of the first and second ladles in the treatment position so that a bottom end of each of the first and second vacuum vessels is immersed by molten steel in each of the first and second ladles.

Abstract: A degassing apparatus having duplex vacuum vessels for removing impurity gases from molten steel by backflow of molten steel thereby homogenizing molten steel composition. The apparatus includes duplex vacuum vessels of first and second vacuum vessels fixedly arranged at a predetermined interval to a floor which is provided horizontally at a predetermined height from a bottom; first and second ladle carriages arranged to run on first and second rails, respectively, to reciprocate between a treatment position directly under the first and second vacuum vessels and a tapping position where refined molten steel is tapped, each of the first and second ladle carriage loaded with a corresponding one of first and second ladles; and first and second lifting cylinders each for raising and lowering each of the first and second ladles in the treatment position so that a bottom end of each of the first and second vacuum vessels is immersed by molten steel in each of the first and second ladles.