Abstract: In a phase changeable memory device and a method of formation thereof, the phase changeable memory device comprises: a lower electrode pattern on an interlayer insulating layer; an insulating pattern located on the lower electrode pattern; a phase changeable pattern penetrating the insulating pattern and the lower electrode pattern to contact the lower electrode pattern and the interlayer insulating layer; and an upper electrode on the phase changeable pattern.

Abstract: According to some embodiments of the present invention, there are provided PRAMS having a phase-change layer pattern interposed between a molding layer and a forming layer pattern, and methods of forming the same that include a node conductive layer pattern, a molding layer, a forming layer pattern and a protecting layer. The molding layer, the forming layer pattern and the protecting layer are formed to cover the planarized interlayer insulating layer and the node conductive layer pattern. A lower electrode is interposed between the molding layer and the planarized interlayer insulating layer. A phase-change layer pattern is formed on the planarized interlayer insulating layer. A spacer pattern is disposed between the phase-change layer pattern and the molding layer.

Abstract: In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.

Abstract: A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.