Abstract: A charge storage electrode structure and the manufacturing method therefor. The present invention features forming two oxide patterns having viscous property at certain temperatures on a barrier layer as rectangular bar-shaped patterns and applying heat to two oxide patterns to transform the two oxide patterns to cylindrical oxide patterns; depositing polysilicon layer on the cylindrical oxide patterns; etching each end of the portions of the polysilicon layer and removing the two oxide patterns; so as to provide a charge storage electrode structure having at least two conduits which is formed with a polysilicon. The charge storage electrode structure according to the present invention has an increased effective surface area and is manufactured by a relatively simple method facilitating the manufacture of highly integrated semiconductor device.