Abstract: A magnetic tunnel junction device and magnetic memory device. The magnetic tunnel junction device includes a magnetic tunnel junction including a fixed magnetic body, an insulator, and a free magnetic body sequentially stacked and a conducting wire disposed adjacent the free magnetic body of the magnetic tunnel junction to apply in-plane current. The fixed magnetic body has a fixed magnetization direction and is a thin film including a material magnetized directionally perpendicular to a film surface. The main free magnetic layer and the auxiliary free magnetic layer change in magnetization direction and is a thin film including a material magnetized directionally perpendicular to a film surface, and the main free magnetic layer is disposed adjacent to a conducting wire generating spin current by the in-plane current. Among magnetic layers constituting the free magnetic body, two magnetic layers closest to each other have opposite magnetization directions by an RKKY exchange interaction.

Abstract: Disclosed is an ultra low power transimpedance amplifier based on spintronics. According to the present invention, provided is an ultra low power transimpedance amplifier based on spintronics, which includes: a spintronics based oscillator receiving current and outputting an alternating signal by using spin transfer torque or spin orbit torque; a bandpass filter passing a signal in a predetermined frequency band of the alternating signal output by the spintronics based oscillator; and a spintronics based detector outputting voltage by inputting the signal in the predetermined frequency band, which is output by the bandpass filter.

Abstract: A magnetic nano oscillating device, according to an embodiment of the present invention, comprises: a ferromagnetic layer disposed on a substrate; a non-magnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic layer (or a ferrimagnetic layer) laminated on the non-magnetic conductive layer; and first and second electrodes respectively contacting both side surfaces of the ferromagnetic layer and the non-magnetic conductive layer.

Abstract: A composite polymer electrolyte membrane for a fuel cell may be manufactured by the following method: partially or totally filling the inside of a pore of a porous support with a hydrogen ion conductive polymer electrolyte solution by performing a solution impregnation process; and drying the hydrogen ion conductive polymer electrolyte solution while completely filling the inside of the pore with the hydrogen ion conductive polymer electrolyte solution by performing a spin dry process on the porous support of which the inside of the pore is partially or totally filled with the hydrogen ion conductive polymer electrolyte solution.

Abstract: The present invention relates to a cost-effective and efficient method for preparing treprostinil with high purity, and an intermediate therefor.

Abstract: A damper for reinforcing earthquake resistance according to the present invention includes a first supporting part mounted in a building structure, a second supporting part mounted on a support structure movably disposed to be separated from the building structure, and disposed to face the first supporting part, and a damper part connecting the first supporting part with the second supporting part and absorbing energy generated by an earthquake.

Abstract: A magnetic memory according to one embodiment of the present invention comprises: a magnetic tunnel junction comprising a free layer, a reference layer, and a tunnel barrier layer disposed between the free layer and the reference layer; a first conductive line disposed adjacent to the free layer; and a second conductive line disposed adjacent to the free layer and intersecting the first conductive line. A magnetization switching method of the magnetic memory comprises the steps of: applying an alternating current-type first current having a first frequency to the first conductive line; and applying an alternating current-type second current having the first frequency to the second conductive line. The free layer performs magnetization reversal, using the first current and the second current, and the magnetic tunnel junction is disposed on an intersection point between the first conductive line and the second conductive line.

Abstract: A vacuum insulated glass unit (IGU) including an interconnected polymer spacer matrix and methods of making the same. The vacuum IGU includes a first glass-based layer, a second glass-based layer, an interconnected polymer spacer matrix, and an edge seal between the periphery of the first and second glass-based layers.

Abstract: A magnetic tunnel junction device and magnetic memory device. The magnetic tunnel junction device includes a magnetic tunnel junction including a fixed magnetic body, an insulator, and a free magnetic body sequentially stacked and a conducting wire disposed adjacent the free magnetic body of the magnetic tunnel junction to apply in-plane current. The fixed magnetic body has a fixed magnetization direction and is a thin film including a material magnetized directionally perpendicular to a film surface. The free magnetic body has a structure of N/main free magnetic layer, where N is a positive integer greater than or equal to 2 and indicates that a structure is stacked repeatedly N times. The main free magnetic layer and the auxiliary free magnetic layer change in magnetization direction and is a thin film including a material magnetized directionally perpendicular to a film surface, and the main free magnetic layer is disposed adjacent to a conducting wire generating spin current by the in-plane current.

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.

Abstract: A lithium ion battery including a core-shell structured fire extinguishing particle is disclosed. When the battery is overheated to a predetermined temperature, a shell of the fire extinguishing particle coated on one surface or both surfaces of a porous separator is melted, a fire extinguishing material disposed in an inner space of the shell is released into an electrolytic solution of the battery, and as a result, it is possible to prevent the battery from being ignited or exploded even though the battery is overheated. Further, the melted shell clogs pores of the porous separator to block lithium ions from moving, such that the battery is blocked from being driven, thereby preventing the battery from being overheated any more.

Abstract: A magnetic device includes: a conductive layer into which current is injected in a first direction, the conductive layer causing spin Hall effect or Rashba effect; a ferromagnetic layer disposed in contact with the conductive layer such that the ferromagnetic layer and the conductive layer are stacked on each other, a magnetization direction of the ferromagnetic layer being switched; and a spin filter structure having a fixed magnetization direction, the spin filter structure being disposed on at least one of the opposite side surfaces of the first direction of the conductive layer to inject spin-polarized current into the conductive layer.

Abstract: A magnetic tunnel junction device and a magnetic memory device. The magnetic tunnel junction device includes a magnetic tunnel junction including a fixed magnetic body, an insulator, and a free magnetic body sequentially stacked and a conducting wire disposed adjacent the free magnetic body of the magnetic tunnel junction to apply in-plane current. The fixed magnetic body has a fixed magnetization direction and is a thin film including a material magnetized directionally perpendicular to a film surface. The free magnetic body has a structure of [auxiliary free magnetic layer/free non-magnetic layer]N/main free magnetic layer, where N is a positive integer greater than or equal to 2 and indicates that an [auxiliary free magnetic layers/free non-magnetic layers] structure is stacked repeatedly N times.

Abstract: A damper for reinforcing earthquake resistance according to the present invention includes a first supporting part mounted in a building structure, a second supporting part mounted on a support structure movably disposed to be separated from the building structure, and disposed to face the first supporting part, and a damper part connecting the first supporting part with the second supporting part and absorbing energy generated by an earthquake.

Abstract: The present invention relates to a composition for detecting microbial contamination comprising a preparation for detecting nucleases, and a use thereof. A probe for measuring nucleic acid double-stranded nucleases, according to the present invention, may detect the comprehensive nucleic acid degradation capability of nucleases, whereby it is possible to quickly and precisely detect and quantify live microorganisms in a sample in a simple manner. Moreover, since the probe of the present invention is characterized in that signals of fluorescence consistently increase; is capable of measuring live microorganisms; and consists of a double-stranded nucleic acid, the probe is excellent for storage in a kit or a cartridge. As such, it is expected that the probe of the present invention may be used to easily and simply measure and compare the degree of contamination of microorganisms in an environment.

Abstract: A mobile device includes at least one internal device including a processor to control the mobile device, an area including a main battery, a first antenna to receive power wirelessly transferred from an auxiliary battery of an accessory coupled to the mobile device, and a power manager. The power manager selects the main battery or the auxiliary battery of the accessory as a power source for the at least one internal device, supplies the at least one internal device with power from the main battery when the main battery is selected as the power source, and supplies the at least one internal device with the power received through the first antenna when the auxiliary battery is selected as the power source.

Abstract: A magnetic device includes a conductive layer into which current can be injected in a first direction, the conductive layer causing spin Hall effect or Rashba effect. A ferromagnetic layer is disposed in contact with the conductive layer such that the ferromagnetic layer and the conductive layer are stacked on each other, a magnetization direction of the ferromagnetic layer being switched. A spin filter structure has a fixed magnetization direction, the spin filter structure being disposed on at least one of the opposite side surfaces of the first direction of the conductive layer to inject spin-polarized current into the conductive layer.

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.

Abstract: A harmonic Hall voltage analysis method is provided to analyze a damping-like effective field ?HDL and a field-like effective field ?HFL with respect to polar angles of all magnetizations and a ratio R of an anomalous Hall effect resistance RAHE to a wide plane Hall resistance RPHE (R=RAHE/RPHE).

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.