Abstract: A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.

Abstract: A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn—O—Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: Chemical Formula 1 wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.

Abstract: A semiconductor resist composition includes-an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb. The semiconductor resist composition may have excellent solubility and storage stability.

Abstract: A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: wherein, in Chemical Formula I, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an —alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb, where Ra is not hydrogen.

Abstract: A semiconductor resist composition includes an organometallic compound represented by Formula I and a solvent: wherein L includes at least one alkylene group in the main chain. A pattern may be formed using the composition. The pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.

Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1, an organometallic compound represented by Chemical Formula 2, and a solvent, and a method of forming patterns using the same. When the semiconductor photoresist composition is irradiated with e.g., extreme ultraviolet light, radical crosslinking between Sn-containing units may occur via Sn—O—Sn bond formation, and a photoresist polymer providing excellent sensitivity, small or reduced line edge roughness, and/or excellent resolution may be formed.

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein, in Chemical Formula 1, R1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkyl-O-alkyl group, and R2 to R4 are each independently selected from —ORa and —OC(?O)Rb.

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound including a structural unit represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein in Chemical Formula 1, carbon bonded with a central metal atom (M) forms a benzylic bond with a ring group having a conjugated structure, such as an aromatic ring group, a heteroaromatic ring group, or a combination thereof.

Abstract: This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Formula 1 and a solvent, and to a method of forming patterns using the composition: wherein L includes at least one alkylene group in the main chain. A pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.

Abstract: A compound is represented by the following Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as defined in the detailed description:

Abstract: A compound is represented by the following Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as defined in the detailed description:

Abstract: Disclosed are a photosensitive resin composition for a color filter that includes (A) a squaraine dye including at least one selected from compounds represented by the following Chemical Formulae 1 and 2, (B) an alkali soluble resin, (C) a photopolymerizable monomer, (D) a photopolymerization initiator, and (E) a solvent, and a color filter using the same.

Abstract: Disclosed are a photosensitive resin composition for a color filter and a color filter using the same. The photosensitive resin composition for a color filter includes (A) a dye represented by the following Chemical Formula 1, (B) an alkali soluble resin, (C) a photopolymerizable monomer, (D) a photopolymerization initiator, and (E) a solvent.

Abstract: Disclosed are a photosensitive resin composition for a color filter that includes (A) a squaraine dye including at least one selected from compounds represented by the following Chemical Formulae 1 and 2, (B) an alkali soluble resin, (C) a photopolymerizable monomer, (D) a photopolymerization initiator, and (E) a solvent, and a color filter using the same.

Abstract: Disclosed are a photosensitive resin composition for a color filter and a color filter using the same. The photosensitive resin composition for a color filter includes (A) a dye represented by the following Chemical Formula 1, (B) an alkali soluble resin, (C) a photopolymerizable monomer, (D) a photopolymerization initiator, and (E) a solvent.

Abstract: Disclosed is a liquid crystal alignment agent that includes a polymer including a polyamic acid including a repeating unit represented by the following Chemical Formula 1, polyimide including a repeating unit represented by the following Chemical Formula 2, or a combination thereof, wherein in Chemical Formulas 1 and 2, X1, X2, Y1 and Y2 are the same as defined in the detailed description.