Patents by Inventor Kyung Sub Lim

Kyung Sub Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11250911
    Abstract: An operating method of a storage device comprising a nonvolatile memory device comprising a first memory stack and a second memory stack, and a memory controller coupled to control the nonvolatile memory device, the operating method includes determining a first read voltage level with which a first memory cell of the first memory stack is successfully read, and performing a read operation on a second memory cell of the second memory stack using a second read voltage determined based on the first read voltage level.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: February 15, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-chul Park, Youn-yeol Lee, Seul-bee Lee, Kyung-sub Lim
  • Patent number: 11179272
    Abstract: Disclosed are goggles. The goggles are provided so that they comprise: a main body unit worn on the face of a user; a lens unit that is coupled to the main body unit and has a fastening protrusion formed to protrude toward the main body unit; and a fastening unit that has a fastening recess formed therein and is coupled to the main body to lock and unlock the fastening protrusion, wherein the fastening unit includes a body part movably coupled to the main body unit and a guide protrusion for guiding the moving direction of the body part, the main body unit has a guide hole formed at a position corresponding to the guide protrusion, the guide protrusion being received in the guide hole, and the fastening unit further included a protrusion part coupled to the body part to push the fastening protrusion outward such that the lens unit is separated from the main body unit when the fastening protrusion is unlocked according to the movement of the body part into the main body unit.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: November 23, 2021
    Assignee: BOARDRIDERS IP HOLDINGS, LLC
    Inventors: Seung Yun Han, Kyung Sub Lim
  • Patent number: 11164631
    Abstract: A nonvolatile memory device includes a first memory stack including first memory cells vertically stacked on each other, a second memory stack including memory cells vertically stacked on each other, and a control logic configured to set a voltage level of a second voltage applied for a second memory operation to one of the second memory cells in the second memory stack based on a first voltage applied to one of the first memory cells in the first memory stack in a first memory operation. The second memory stack is vertically stacked on the first memory stack. Cell characteristics of the one of the first memory cells is determined using the first voltage.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: November 2, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-chul Park, Youn-yeol Lee, Seul-bee Lee, Kyung-sub Lim
  • Publication number: 20210193225
    Abstract: An operating method of a storage device comprising a nonvolatile memory device comprising a first memory stack and a second memory stack, and a memory controller coupled to control the nonvolatile memory device, the operating method includes determining a first read voltage level with which a first memory cell of the first memory stack is successfully read, and performing a read operation on a second memory cell of the second memory stack using a second read voltage determined based on the first read voltage level.
    Type: Application
    Filed: March 9, 2021
    Publication date: June 24, 2021
    Inventors: Jong-chul PARK, Youn-yeol LEE, Seul-bee LEE, Kyung-sub LIM
  • Publication number: 20210118509
    Abstract: A nonvolatile memory device includes a first memory stack including first memory cells vertically stacked on each other, a second memory stack including memory cells vertically stacked on each other, and a control logic configured to set a voltage level of a second voltage applied for a second memory operation to one of the second memory cells in the second memory stack based on a first voltage applied to one of the first memory cells in the first memory stack in a first memory operation. The second memory stack is vertically stacked on the first memory stack. Cell characteristics of the one of the first memory cells is determined using the first voltage.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Inventors: Jong-chul PARK, Youn-yeol LEE, Seul-bee LEE, Kyung-sub LIM
  • Patent number: 10971210
    Abstract: A nonvolatile memory device includes a memory cell region including a first metal pad, and a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad. The memory cell region includes a first memory stack comprising first memory cells vertically stacked on each other, and a second memory stack comprising second memory cells vertically stacked on each other. The peripheral circuit region includes a control logic for setting a voltage level of a second voltage applied for a second memory operation to a second memory cell of the second memory cells based on a first voltage applied to a first memory cell of the first memory cells in a first memory operation. Cell characteristics of the first memory cell are determined using the first voltage.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: April 6, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-chul Park, Youn-yeol Lee, Seul-bee Lee, Kyung-sub Lim
  • Patent number: 10885983
    Abstract: A nonvolatile memory device includes a first memory stack including first memory cells vertically stacked on each other, a second memory stack including memory cells vertically stacked on each other, and a control logic configured to set a voltage level of a second voltage applied for a second memory operation to one of the second memory cells in the second memory stack based on a first voltage applied to one of the first memory cells in the first memory stack in a first memory operation. The second memory stack is vertically stacked on the first memory stack. Cell characteristics of the one of the first memory cells is determined using the first voltage.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: January 5, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-chul Park, Youn-yeol Lee, Seul-bee Lee, Kyung-sub Lim
  • Publication number: 20200381035
    Abstract: A nonvolatile memory device includes a memory cell region including a first metal pad, and a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first metal pad and the second metal pad. The memory cell region includes a first memory stack comprising first memory cells vertically stacked on each other, and a second memory stack comprising second memory cells vertically stacked on each other. The peripheral circuit region includes a control logic for setting a voltage level of a second voltage applied for a second memory operation to a second memory cell of the second memory cells based on a first voltage applied to a first memory cell of the first memory cells in a first memory operation. Cell characteristics of the first memory cell are determined using the first voltage.
    Type: Application
    Filed: August 14, 2020
    Publication date: December 3, 2020
    Inventors: Jong-chul PARK, Youn-yeol LEE, Seul-bee LEE, Kyung-sub LIM
  • Publication number: 20200126621
    Abstract: A nonvolatile memory device includes a first memory stack including first memory cells vertically stacked on each other, a second memory stack including memory cells vertically stacked on each other, and a control logic configured to set a voltage level of a second voltage applied for a second memory operation to one of the second memory cells in the second memory stack based on a first voltage applied to one of the first memory cells in the first memory stack in a first memory operation. The second memory stack is vertically stacked on the first memory stack. Cell characteristics of the one of the first memory cells is determined using the first voltage.
    Type: Application
    Filed: July 1, 2019
    Publication date: April 23, 2020
    Inventors: Jong-chul PARK, Youn-yeol LEE, Seul-bee LEE, Kyung-sub LIM
  • Publication number: 20190380876
    Abstract: Disclosed are goggles. The goggles are provided so that they comprise: a main body unit worn on the face of a user; a lens unit that is coupled to the main body unit and has a fastening protrusion formed to protrude toward the main body unit; and a fastening unit that has a fastening recess formed therein and is coupled to the main body to lock and unlock the fastening protrusion, wherein the fastening unit includes a body part movably coupled to the main body unit and a guide protrusion for guiding the moving direction of the body part, the main body unit has a guide hole formed at a position corresponding to the guide protrusion, the guide protrusion being received in the guide hole, and the fastening unit further included a protrusion part coupled to the body part to push the fastening protrusion outward such that the lens unit is separated from the main body unit when the fastening protrusion is unlocked according to the movement of the body part into the main body unit.
    Type: Application
    Filed: August 28, 2019
    Publication date: December 19, 2019
    Inventors: Seung Yun HAN, Kyung Sub LIM
  • Patent number: 10441466
    Abstract: Disclosed are goggles. The goggles are provided so that they comprise: a main body unit worn on the face of a user; a lens unit that is coupled to the main body unit and has a fastening protrusion formed to protrude toward the main body unit; and a fastening unit that has a fastening recess formed therein and is coupled to the main body to lock and unlock the fastening protrusion, wherein the fastening unit includes a body part movably coupled to the main body unit and a guide protrusion for guiding the moving direction of the body part, the main body unit has a guide hole formed at a position corresponding to the guide protrusion, the guide protrusion being received in the guide hole, and the fastening unit further included a protrusion part coupled to the body part to push the fastening protrusion outward such that the lens unit is separated from the main body unit when the fastening protrusion is unlocked according to the movement of the body part into the main body unit.
    Type: Grant
    Filed: December 5, 2013
    Date of Patent: October 15, 2019
    Assignee: BOARDRIDERS IP HOLDINGS, LLC
    Inventors: Seung Yun Han, Kyung Sub Lim
  • Publication number: 20160287444
    Abstract: Disclosed are goggles. The goggles are provided so that they comprise: a main body unit worn on the face of a user; a lens unit that is coupled to the main body unit and has a fastening protrusion formed to protrude toward the main body unit; and a fastening unit that has a fastening recess formed therein and is coupled to the main body to lock and unlock the fastening protrusion, wherein the fastening unit includes a body part movably coupled to the main body unit and a guide protrusion for guiding the moving direction of the body part, the main body unit has a guide hole formed at a position corresponding to the guide protrusion, the guide protrusion being received in the guide hole, and the fastening unit further included a protrusion part coupled to the body part to push the fastening protrusion outward such that the lens unit is separated from the main body unit when the fastening protrusion is unlocked according to the movement of the body part into the main body unit.
    Type: Application
    Filed: December 5, 2013
    Publication date: October 6, 2016
    Inventors: Seung Yun Han, Kyung Sub Lim