Abstract: A capacitive button interface device is provided and includes: a touchscreen; a capacitive button which can be attached to or detached from the touchscreen; an input device which can input an operation control command; a storage unit for storing setting information and a program for registering the capacitive button; and a control unit which detects information of the capacitive button attached to the upper surface of the touchscreen and stores or registers the information in the storage unit, and which detects an input of the capacitive button for which registration is complete and performs an operation corresponding to the capacitive button.

Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Abstract: The present invention relates to: a pyrene derivative compound having a specific structure; and a high efficiency organic light-emitting device employing the pyrene derivative compound in a light emitting layer and thus having excellent light-emitting characteristics. The organic light-emitting device according to the present invention can be configured as a high efficiency organic light-emitting device having excellent light-emitting characteristics by employing the pyrene derivative compound having the specific structure as a host in the light emitting layer, and thus can be usefully applied industrially in lighting devices, as well as various display devices such as flat, flexible, and wearable displays.

Abstract: A sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.

Abstract: An organic light-emitting device according to the present invention uses a pyrene derivative compound having a characteristic structure as a host in a light-emitting layer to realize a long-lifespan and high-efficiency organic light-emitting device having excellent light-emitting characteristics in terms of lifespan and luminescence efficiency. Accordingly, the organic light-emitting device can be usefully applied, in the industrial aspect, for various display devices such as flat panel, flexible, and wearable displays, as well as lighting devices.

Abstract: A display panel may include a light emitting element including a light emitting layer and a sensor including a photosensitive layer on a substrate. The light emitting element and the sensor each may include respective portions of first and second common auxiliary layers, which may be continuous under and over the light emitting layer and the photosensitive layer. The first and second common auxiliary layers respectively may include a hole transport material and an electron transport material. The photosensitive layer may include first and second semiconductor layers close to the first and second common auxiliary layers, respectively. The first and second semiconductor layers respectively may include a p-type semiconductor and an n-type semiconductor. The second semiconductor layer may have an uneven surface facing the second common auxiliary layer and may have an average roughness (Rq) of greater than or equal to about 5 nm.

Abstract: An image sensor includes a semiconductor substrate in which a plurality of photo-sensing elements are integrated, an organic active layer on the semiconductor substrate, an interlayer between the organic active layer and the semiconductor substrate, and optionally a color filter layer on the organic active layer. The organic active layer includes a singlet fission material. The interlayer includes a dielectric selected from an oxide, a nitride, oxynitride, fluoride, oxyfluoride, and any combination thereof.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: An electronic device according to various embodiments of the present invention may comprise: a housing comprising a first surface facing in a first direction and a second surface facing in a second direction that is opposite to the first direction, the first surface comprising an at least partially transparent part and at least one opening formed adjacent to the at least partially transparent part; a camera positioned inside the housing, the camera comprising an image sensor facing in the first direction through the at least partially transparent part of the housing; and an acoustic component arranged between the first surface and the second surface, the acoustic component comprising a vibration plate configured to generate a sound such that the same moves in at least one direction selected from the first and second directions, a first passage formed in a third direction that is substantially perpendicular to the first direction such that the generated sound passes through the same, and a second passage forme

Abstract: An organic compound is represented by Chemical Formula 1A or Chemical Formula 1B. In Chemical Formulas 1A and 1B, Ar1, Ar2, R1, R2, n, and m are each the same as in the detailed description.

Abstract: Provided a compound represented by Chemical Formula 1, and a photoelectric device, a light absorption sensor, and an electronic device including the same. In Chemical Formula 1, the definition of each substituent is as described in the specification.

Abstract: The present invention relates to a novel heterocyclic compound usable in an organic light-emitting device and to an organic light-emitting device comprising same, wherein [chemical formula A] is as described in the detailed description of the invention.

Abstract: A display device includes a pixel component including scan lines, data lines, and pixels electrically connected to the scan lines and the data lines, and defining pixel columns and pixel rows, a data driver disposed on a side of the pixel component, and a scan driver disposed on the side of the pixel component. The pixel component includes sub-scan lines, and dummy lines. Each scan line may be electrically connected to the sub-scan lines by contacts. The contacts are divided into contact groups having a same arrangement. The pixel component is divided into pixel blocks corresponding to the contact groups. Each pixel block includes first and second area divided by contact group. The first area is closer to the scan driver than the second area. The pixel component further includes supplementary power lines spaced apart from the respective sub-scan lines.

Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

Abstract: A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.

Abstract: A display device includes a substrate including a display area including pixels, and a dummy area including dummy pixels, a pixel circuit layer including a transistor, and a via layer above the transistor, bank patterns above the via layer, light-emitting elements between the bank patterns in plan view, a first bank above a portion of the bank patterns, a second bank above the first bank, and including an edge bank defining an outermost boundary of the dummy area, covering an inner side of an edge bank pattern of the bank patterns overlapping the edge bank, and covering an inner side of a portion of the first bank that overlaps the edge bank, the first bank and the second bank partitioning emission areas and dummy opening areas, and a light conversion layer in the emission areas and in the dummy opening areas, which correspond to openings of the second bank.

Abstract: A display device including: a substrate including a display area including a pixel area, and a non-display area at at least one side of the display area; a pixel in the pixel area, and including a light emitting element, a color conversion layer located on the light emitting element, and a color filter layer located on the color conversion layer; a first step difference compensation pattern in the non-display area, and around the display area; and a second step difference compensation pattern in the non-display area, and including a first end adjacent to the display area, and a second end opposite to the first end and located adjacent to an edge of the substrate, wherein the second step difference compensation pattern is located on the first step difference compensation pattern and overlaps the first step difference compensation pattern, and covers one end of the first step difference compensation pattern.

Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor on the substrate and including a photosensitive layer extending at least partially in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include separate, respective portions of each of first and second common auxiliary layers each extending continuously as a single piece of material under and on, respectively, each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a light absorbing semiconductor having a HOMO energy level having a difference of less than about 1.0 eV from a HOMO energy level of the first common auxiliary layer and a LUMO energy level having a difference of less than about 1.0 eV from a LUMO energy level of the second common auxiliary layer.

Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor including a photosensitive layer on the substrate and arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the photosensor and the light emitting layer at least partially overlap in the in-plane direction, wherein the light emitting element and the photosensor further include separate, respective portions of a first common auxiliary layer disposed under each of the light emitting layer and the photosensitive layer and connected to each other to be a single piece of material extending continuously between the light emitting element and the photosensor, and the photosensitive layer includes a first semiconductor represented by Chemical Formula 1 and a second semiconductor not including any fullerenes and forming a pn junction with the first semiconductor.

Abstract: An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.