Abstract: A method of operating a storage device including a storage controller and non-volatile memories includes detecting, by the storage controller, an event of a first non-volatile memory among the non-volatile memories, generating, by the storage controller, event information based on the detected event and transmitting, by the storage controller, the event information including an event type to the first non-volatile memory, generating, by the first non-volatile memory, internal information or data of the first non-volatile memory as debugging data in response to the event information, storing the debugging data by the first non-volatile memory, and updating, by the first non-volatile memory, an event flag to indicate a certain event type based on the event information.

Abstract: A operating method of a storage device including a nonvolatile memory, where the method may include: receiving a first packet including a read command for the nonvolatile memory from a host according to a first protocol; acquiring first requester information corresponding to an identifier (ID) of the host by parsing the first packet; determining resource priorities based on first requester information; reading data stored in the nonvolatile memory by using resources of the storage device according to the resource priorities; and transmitting the data to the host.

Abstract: Disclosed is a storage device, the device comprising, a nonvolatile memory device configured to store data; and a storage controller configured to perform logging for a selected memory area of the nonvolatile memory device in response to a specific event based on receiving a telemetry request from a host, and transmit log data collected by the logging in response to the telemetry request, the storage controller including a logging module configured to sample distribution data of a voltage range corresponding to the event type during the logging and provide the sampled distribution data as the log data.

Abstract: A method of controlling operation of a storage system including a storage device and a host device configured to control the storage device comprising determining, by a host device, a selected operation mode from among a plurality of operation modes of a storage device, notifying, by the host device, the selected operation mode to the storage device, setting, by the storage device, an operation condition of the storage device to a selected operation condition corresponding to the selected operation mode, and performing, by the storage device, an input-output operation with the host device based on the selected operation condition.

Abstract: A storage device includes a non-volatile memory, a buffer memory, and a storage controller. The controller receives first host data indicating a first logical block address range of the non-volatile memory from a host device, reads first memory data from the non-volatile memory using the first logical block address range, and stores the first memory data in the buffer memory. The storage controller further receives a read command and a read address from the host device, determines whether the read address is within the first logical block address range, read, in response to the read address being determined as within the first logical block address range and the read command, the first memory data from the buffer memory, without accessing the non-volatile memory, and outputs the first memory data from the buffer memory to the host device.

Abstract: A storage device and an operating method thereof are provided. The storage device includes a memory configured to store parameter data used as an input in a neural network. The storage device also includes a storage controller configured to receive a request signal from a host. The storage controller is also configured to encode, based on the parameter data, log data in the neural network, the log data indicating contexts of the plurality of components, and transmit the encoded log data to the host.

Abstract: A storage device performing a secure erase and an operating method thereof are provided. The storage device may include a controller configured to control a non-volatile memory device including a plurality of blocks. The controller includes a secure erase control logic configured to control a secure erase operation on the plurality of blocks and perform a control operation in response to a secure erase request from a host with respect to a first block among the plurality of blocks such that the secure erase operation on the first block is skipped based on a result of determining at least one selected from a secure erase state and/or a deterioration state of the first block.

Abstract: A method of operating a memory device includes reading a first page of memory cells containing at least one worn-out memory cell therein using a read voltage, from a first memory block, and reading a second page of memory cells, which extends adjacent to the first page in the first memory block, using the read voltage. An operation is performed to determine a match rate between a position of a column including a “0” bit in the first page with a position of a column including a “0” bit in the second page. Thereafter, the second page is read by adjusting a read pass voltage applied to a word line of another page in the first memory block, when the match rate exceeds a threshold match rate.

Abstract: A storage device including a non-volatile memory for storing data, a temperature sensor having resistance that changes according to temperature of the temperature sensor, and a temperature measurement circuit including a plurality of transistors, which are turned on or off based on a current of the temperature sensor and have different threshold voltages from one another. The temperature management circuit may be configured to apply a current to the temperature sensor and generate information indicating the temperature of the temperature sensor or indicating damage to the temperature sensor based on an output current obtained from the plurality of transistors.

Abstract: An operating method of a storage controller which is configured to communicate with a host and with a non-volatile memory device. The method may include: generating an error count by counting a number of first-type error bits of a target super block of the non-volatile memory device, determining whether the error count exceeds a first reference value, fetching setting data from a latch unit of the non-volatile memory device, based on determining that the error count exceeds the first reference value, determining whether reference setting data of a setting table matches the fetched setting data, the reference setting data indicating information about a designed operating environment of the non-volatile memory device, and providing a reset request to the latch unit, based on determining that the reference setting data does not match the fetched setting data.

Abstract: A storage device includes a controller configured to control a non-volatile memory device(s) having a plurality of memory blocks therein. The controller includes secure erase control logic configured to: (i) control secure erase operations on the plurality of memory blocks in response to a secure erase request received from a host, and (ii) set flags corresponding to the plurality of memory blocks such that a first flag corresponding to a first memory block, which has undergone at least two of the secure erase operations, has a first value. Adaptive control logic is provided, which is configured to change at least one operating condition associated with a write operation and/or read operation directed at the first memory block, in response to detecting that the first flag has the first value.

Abstract: A memory management method of a storage device including: programming write-requested data in a memory block; counting an elapse time from a time when a last page of the memory block was programmed with the write-requested data; triggering a garbage collection of the storage device when the elapse time exceeds a threshold value; and programming valid data collected by the garbage collection at a first clean page of the memory block.

Abstract: A storage device is provided. The storage device includes: a nonvolatile memory including memory cells divided into first and second memory cell groups; a memory controller; and a physically unclonable function (PUF) circuit configured to generate PUF data, based on an output of the second memory cell group, by excluding, from the output of the second memory cell group, outputs of a first exclusion area, a second exclusion area, and a third exclusion area, The first exclusion area has a threshold voltage equal to or greater than a first read level and less than a second read level, the second exclusion area has a threshold voltage less than a third read level that is less than the first read level, and the third exclusion area has a threshold voltage equal to or greater than a fourth read level that is greater than the second read level.

Abstract: Provided is a method for operating a memory device including performing a first setting operation on a first operation, reading map data based on the first setting operation, and performing a second setting operation on a second operation.

Abstract: A data storage device including: a memory device including a plurality of memory blocks; and a memory controller configured to control the memory device, wherein the plurality of memory blocks are connected with row lines, wherein the row lines include word lines, wherein the memory controller is further configured to: check whether a resistive defect occurs at the row lines except for the word lines; and set a program operation time of a memory block corresponding to a row line, at which the resistive defect occurs, to be longer than a program operation time of the other memory blocks.

Abstract: A storage device includes a plurality of nonvolatile memory devices, a storage controller circuit and a leakage detection circuit. The storage controller circuit controls a plurality of nonvolatile memory devices, the storage controller circuit includes a plurality of connection terminals, each of the plurality of connection terminals is commonly connected to a corresponding set of pins, from among the pluralities of pins included in the plurality of nonvolatile memory devices, via a corresponding connection node, from among a plurality of connection nodes. The pins included in each set of pins have a same attribute. The leakage detection circuit is configured to determine whether leakage occurs at each set of pins based on the merged signal generated by the connection node connected to each set of pins, and configured to provide the storage controller circuit with a detection signal indicating a result of the determination.

Abstract: A method of operating a storage device including a plurality of nonvolatile memories, each of the plurality of nonvolatile memories including a temperature sensor, includes checking whether a predetermined temperature check cycle for the plurality of nonvolatile memories has been reached, monitoring, in response to the checking result, temperature information of at least some of the plurality of nonvolatile memories using the temperature sensor, obtaining standing time information of the plurality of nonvolatile memories by applying a temperature acceleration condition based on the monitored temperature information, and changing at least one of a plurality of driving parameters required for operating each of the plurality of nonvolatile memories based on at least one of the monitored temperature information and the obtained standing time information.

Abstract: An operating method of a storage device includes monitoring a temperature of a nonvolatile memory device including a plurality of memory blocks, receiving a first request from a host, in response to the first request, transmitting a first command to the nonvolatile memory device when a first memory block corresponding to the first request is exposed at a temperature of a threshold temperature or higher for a first time period that is equal to or greater than a threshold time period and a second command to the nonvolatile memory device when the first memory block is exposed at a temperature lower than the threshold temperature for the threshold time period, charging word lines of the first memory block with a driving voltage in response to the first command, and performing a first operation corresponding to the first request in response to the first command or the second command.

Abstract: A storage device including: a memory device including a plurality of superblocks, wherein each superblock includes memory blocks included in a group of a plurality of non-volatile memories; and a controller for controlling the memory device, wherein the controller controls a first superblock among the plurality of superblocks to be erased to program data received from a host, controls the data to be programmed in the first superblock, controls the first superblock to be selected as a victim superblock for a garbage collection operation, and controls a media scanning operation to be performed on the memory device when a data duration is greater than a threshold, wherein the data duration is an interval between a first time point, at which the first superblock is erased, and a second time point, at which the first superblock is selected as the victim superblock.

Abstract: A storage device includes nonvolatile memories each including an internal temperature sensor; a memory controller configured having a plurality of operation commands defined for different temperature and an external temperature sensor. The memory controller obtains an external temperature value from the external temperature sensor in a first cycle, obtains an internal temperature value of the internal temperature sensor in a second cycle different from the first cycle, determines a temperature range of a target nonvolatile memory based on the external temperature value when a difference between the external temperature value and the internal temperature value is equal to or less than a first threshold value, to determine the temperature range based on the internal temperature value when the difference exceeds the first threshold, and to provide an operation command corresponding to the temperature range to the target nonvolatile memory.