Patents by Inventor Kyuzo Nakamura

Kyuzo Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6533630
    Abstract: A vacuum display device for enabling the manufacture of high quality plasma display device with high throughput. A front panel 6 constituting a plasma display device is carried into a film deposition chamber 22; and a MgO thin film is deposited in a vacuum atmosphere. The front panel 6 is then carried into an alignment chamber 11 without being exposed to the atmosphere and aligned with a rear panel 7 that has been subjected to degassing in a vacuum atmosphere. There is no absorption of gas, such as moisture; and the quality of the thin film is not degraded. After alignment, aging processing is carried out without exposure to the atmosphere, followed by gas encapsulation and hermetic sealing, which further increases throughput.
    Type: Grant
    Filed: May 26, 2000
    Date of Patent: March 18, 2003
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Ryuuichi Terajima, Yukio Masuda, Toshiharu Kurauchi, Ken Momono, Yoshio Sunaga, Hidenori Suwa, Kyuzo Nakamura
  • Patent number: 5840374
    Abstract: An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.
    Type: Grant
    Filed: June 11, 1996
    Date of Patent: November 24, 1998
    Assignees: Nihon Shinku Gijutsu Kabushiki Kaisha, Brother Kogyo Kabushiki Kaisha
    Inventors: Kazuyuki Ito, Kyuzo Nakamura, Michio Ishikawa, Jun Togawa, Noriaki Tani, Masanori Hashimoto, Yumiko Ohashi
  • Patent number: 5554418
    Abstract: A passivation film is formed by plasma CVD process in which organic oxysilane is used as a raw gas. When an SiO.sub.2 film as the passivation film is formed on a surface of a substrate, Ar, He or NH.sub.3 gas is used as a reactive gas which serves as an auxiliary for decomposing the raw gas. Ashing of the substrate by oxygen or hydrogen radicals is thus prevented. Fluorine group gas of CF.sub.4 or NF.sub.3 may be added to the reactive gas. The SiO.sub.2 film as a passivation film as described above may be formed first as an initial passivation film and then another passivation film may be formed on top of the initial passivation film by using a reactive gas having an ashing effect such as O.sub.2, N.sub.2 O, O.sub.3 and H.sub.2.
    Type: Grant
    Filed: September 27, 1994
    Date of Patent: September 10, 1996
    Assignees: Nihon Shinku Gijutsu Kabushiki Kaisha, Brother Kogyo Kabushiki Kaisha
    Inventors: Kazuyuki Ito, Kyuzo Nakamura, Michio Ishikawa, Jun Togawa, Noriaki Tani, Masanori Hashimoto, Yumiko Ohashi
  • Patent number: 5288329
    Abstract: An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.
    Type: Grant
    Filed: November 20, 1990
    Date of Patent: February 22, 1994
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Michio Ishikawa, Kazuyuki Ito, Noriaki Tani, Masanori Hashimoto, Yoshifumi Ota
  • Patent number: 5250339
    Abstract: A magnetic recording medium suitable for high-density recording which comprises a non-magnetic substrate disk, at least one magnetic layer and at least one protective layer, the magnetic layer and the protective layer being formed in succession on the non-magnetic substrate disk, wherein the non-magnetic substrate disk comprises a glass substrate and at least one non-magnetic metallic film provided on the glass substrate, and the non-magnetic metallic film is provided on a surface thereof with a multitude of fine concentric grooves.
    Type: Grant
    Filed: September 8, 1992
    Date of Patent: October 5, 1993
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Noriaki Tani, Kyuzo Nakamura, Michio Ishikawa, Masanori Hashimoto, Yoshifumi Ota
  • Patent number: 5198309
    Abstract: An improved magnetic recording member comprising a magnetic metallic film having the composition Co.sub.x Cr.sub.y Ni.sub.z wherein x, y, and z are atomic ratios and 0.45.ltoreq.x<1.0; 0<y.ltoreq.0.25; and x+y+z=1. The magnetic metallic film is formed over a Cr film provided on a surface of a non-magnetic substrate.
    Type: Grant
    Filed: August 24, 1987
    Date of Patent: March 30, 1993
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota, Taiki Yamada, Michio Ishikawa, Noriaki Tani
  • Patent number: 5180476
    Abstract: A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film according to the present invention uses the addition of a donor element, if needed. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target at 600 Oe or greater as well as by charging the target with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O base transparent conductive film uses the addition of a donor element, if needed. The apparatus has a vacuum chamber adapted to support therein a substrate and a target in an opposed relationship for forming by sputtering the transparent conductive film on the substrate by plasma discharge generated therebetween.
    Type: Grant
    Filed: February 26, 1991
    Date of Patent: January 19, 1993
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Satoru Ishibashi, Kyuzo Nakamura, Yasushi Higuchi, Takashi Komatsu, Yuzo Murata, Yoshifumi Ota
  • Patent number: 5147734
    Abstract: A magnetic recording member with improved coercive force is obtained by:(a) forming by sputtering or Cr film on a non-magnetic substrate;(b) forming by sputtering an epitaxially grown film of a Co alloy containing at least Cr as an additional metal on the Cr film formed in the step (a);and applying a negative bias voltage to the substrate during at least one of steps (a) and (b).The coercive force of the magnetic recording member is further increased when high-frequency sputtering is used instead of direct current sputtering.
    Type: Grant
    Filed: March 14, 1989
    Date of Patent: September 15, 1992
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota, Michio Ishikawa, Noriaki Tani, Masanori Hashimoto
  • Patent number: 5116479
    Abstract: A process and apparatus for producing an In-O or In-Sn-O based transparent conductive film by a sputtering process is provided. The sputtering voltage is kept constant at 350V or less by maintaining the intensity of the magnetic field on the surface of the target at 400 Oe or greater. The apparatus contains a vacuum chamber wherein the substrate and target are mounted in opposite to each other. An electromagnet, used for adjusting the intensity of the magnetic field is located on the rear surface of the target. Additionally provided is a controller for the electric current supplied to the electromagnet. The controller is also connected to a DC power supply for the electromagnet.
    Type: Grant
    Filed: May 17, 1990
    Date of Patent: May 26, 1992
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Satoru Ishibashi, Yoshifumi Ota, Yasushi Higuchi
  • Patent number: 5069983
    Abstract: A magnetic recording member having high coercive force, comprising:(a) a non-magnetic substrate;(b) a Cr base film formed on said substrate by a film forming process; and(c) a Co alloy film formed on said Cr base film by the same film forming process as in (b),wherein said Cr base film contains in addition to Cr at least one additional element selected from the group consisting of rare earth elements, Si, Cu, P and Ge, and wherein said Co alloy film is formed by continuous operation of said film forming process without interruption after completion of the formation of said Cr base film.
    Type: Grant
    Filed: September 29, 1989
    Date of Patent: December 3, 1991
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota, Michio Ishikawa, Noriaki Tani, Masanori Hashimoto, Yuzo Murata
  • Patent number: 5024854
    Abstract: A perpendicular type magnetic recording member comprising a perpendicular-incidence magnetic film on a substrate, the perpendicular-incidence magnetic film comprising a magnetic metal and oxygen, the magnetic metal being selected from the group consisting of ferro-magnetic alloys, alloys thereof and combinations thereof; and a method of manufacturing the perpendicular type recording member by utilizing vapor deposition techniques, which may include sputtering and ionization.
    Type: Grant
    Filed: September 22, 1989
    Date of Patent: June 18, 1991
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota, Taiki Yamada
  • Patent number: 4832810
    Abstract: A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.
    Type: Grant
    Filed: July 7, 1987
    Date of Patent: May 23, 1989
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota, Taiki Yamada, Michio Ishikawa, Noriaki Tani, Yasushi Higuchi
  • Patent number: 4804590
    Abstract: An abrasion resistant magnetic recording member having a carbonaceous surfacial protective film for protecting a surface of a magnetic film formed on a substrate, and the carbonaceous surfacial protective film is formed of a lower layer comprising a comparatively hard carbonaceous film and an upper layer comprising a comparatively soft carbonaceous film.
    Type: Grant
    Filed: November 25, 1986
    Date of Patent: February 14, 1989
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota, Taiki Yamada, Michio Ishikawa, Noriaki Tani
  • Patent number: 4683176
    Abstract: An optical magnetic recording member comprising a perpendicular-type magnetic film which is provided on a reflection film, and is made of a mixture of a ferromagnetic metal Me and a dielectric material.
    Type: Grant
    Filed: August 15, 1984
    Date of Patent: July 28, 1987
    Assignee: Nihonshinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota, Tsutomu Asaka
  • Patent number: 4661420
    Abstract: An enhancement of the Kerr rotation angle is obtained in a magnetic recording member by providing an amorphous layer of Si, Ge, or alloy thereof. Such layer may further contain any of the following additional elements: H, C, F, N and O.
    Type: Grant
    Filed: February 5, 1985
    Date of Patent: April 28, 1987
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota, Shin Asari, Tsutomu Asaka
  • Patent number: 4655167
    Abstract: A method and apparatus for making an abrasion-resistant magnetic recording product comprising forming a magnetic film on the surface of a substrate in a vacuum container, and thereafter, vapor depositing a lubricant on the surface of the magnetic film in the same vacuum container. If necessary, the surface of the magnetic film can be oxidized in the same vacuum container, prior to vapor depositing the lubricant.
    Type: Grant
    Filed: June 18, 1985
    Date of Patent: April 7, 1987
    Assignee: Nikon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota
  • Patent number: 4587179
    Abstract: A magnetic recording member characterized in that a magnetic film formed on a surface of a substrate has a very small amount of hydrogen mixed therein. The manufacturing process therefor is characterized in that hydrogen gas is introduced into the vacuum treatment chamber while the magnetic particles are adhered to the surface of the substrate.
    Type: Grant
    Filed: November 7, 1983
    Date of Patent: May 6, 1986
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota
  • Patent number: 4581245
    Abstract: A method and apparatus for making an abrasion-resistant magnetic recording product comprising forming a magnetic film on the surface of a substrate in a vacuum container, and thereafter, vapor depositing a lubricant on the surface of the magnetic film in the same vacuum container. Preferably, the surface of the magnetic film can be oxidized with an oxidizing gas by ion bombardment in the same vacuum container, prior to vapor depositing the lubricant.
    Type: Grant
    Filed: December 21, 1982
    Date of Patent: April 8, 1986
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ota
  • Patent number: 4412907
    Abstract: A ferromagnetic, high speed, sputtering apparatus is provided which comprises a vacuum chamber and a target of ferromagnetic material. The target comprises at least two segments which are positioned adjacent to one another and have a gap therebetween. This gap has at least a portion of which that does not extend in the direction of the thickness of the target. A substrate in the vacuum chamber is positioned facing one side of the target. Also, magnetic field generating means is positioned on the other side of the target so that the magnetic field therefrom leaks through the gap.
    Type: Grant
    Filed: July 23, 1982
    Date of Patent: November 1, 1983
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Akio Ito, Kyuzo Nakamura, Yoshifumi Ota, Taiki Yamada
  • Patent number: 4401546
    Abstract: A ferromagnetic, high-speed sputtering apparatus including an evacuable chamber, a substrate in the chamber, a target of ferromagnetic substance in the chamber facing the substrate, and magnetic field developing means in the chamber on the side of the target opposite the substrate. The target serves as a cathode. The target includes at least two separate segments of ferromagnetic substance which are spaced apart one from another by a gap so that a leakage magnetic field may be produced on the surface of the target facing the substrate. The gap may be less than about 3 mm. Each of the segments can include a ridge portion on the surface facing the substrate. Each ridge portion can have at least one apex and at least one slant surface.
    Type: Grant
    Filed: March 25, 1982
    Date of Patent: August 30, 1983
    Assignee: Nihon Shinku Gijutsu Kabushiki Kaisha
    Inventors: Kyuzo Nakamura, Yoshifumi Ohta, Taiki Yamada