Abstract: A cable connection assembly includes an electrically conductive cable, an electrically conductive connector, and a flowable sealant. The electrical cable includes a conductor. The connector includes a connector body having an outer surface and a lengthwise connector axis. The connector body defines a conductor cavity receiving the conductor of the electrical cable. The connector further includes a sealant flow blocking wall on the connector body and extending radially outwardly from the outer surface of the connector body. The flowable sealant surrounds a portion of the connector body. The sealant flow blocking wall is configured to inhibit flow of the sealant on the outer surface along the lengthwise connector axis.

Abstract: A cable connector system includes an electrical cable (having a primary conductor and an insulation layer), a connector, a flow block member and a flowable sealant. The primary conductor of the cable extends into a conductor bore of the connector through a passage in the flow block member and is mechanically and electrically coupled to the connector. The flow block member is thereby mounted on the primary conductor and interposed between a terminal end of the insulation layer and an end face of the connector. The sealant surrounds the flow block member and adjacent portions of the insulation layer and the connector. The flow block member inhibits flow of the sealant into the conductor bore through the entry opening.

Abstract: A method for forming a cover assembly on an electrical power transmission cable includes: mounting a tubular cover member around the cable such that a portion of the cover member defines a cavity surrounding the cable; providing a flowable electrical stress grading material in the cavity; and applying a vacuum to the cavity to evacuate air from the cavity and compact the electrical stress grading material in the cavity.

Abstract: A method for preparing a polymer insulated cable including a semiconductive layer surrounding a polymeric insulation layer includes: cutting the semiconductive layer by grinding a circumferential dividing groove in the semiconductive layer using a rotating grinding surface, wherein the dividing groove defines first and second semiconductive sections of the semiconductive layer on opposed sides of the dividing groove; and thereafter removing the second semiconductive section from the polymeric insulation layer while retaining the first semiconductive section on the polymeric insulation layer.