Patents by Inventor Lakmal C. Kalutarage
Lakmal C. Kalutarage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120193Abstract: Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The silicon-containing material may extend into one or more recesses defined by alternating layers of material deposited on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting a remaining silicon-containing material with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the silicon-containing material. The methods may include providing a cleaning agent to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the cleaning agent. The contacting with the cleaning precursor may remove surface oxide from the substrate.Type: ApplicationFiled: October 5, 2022Publication date: April 11, 2024Applicant: Applied Materials, Inc.Inventors: Shankar Venkataraman, Zeqing Shen, Susmit Singha Roy, Abhijit Basu Mallick, Lakmal C. Kalutarage, Jongbeom Seo, Sai Hooi Yeong, Benjamin Colombeau, Balasubramanian Pranatharthiharan
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Patent number: 11942330Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.Type: GrantFiled: June 9, 2022Date of Patent: March 26, 2024Assignee: Applied Materials, Inc.Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
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Publication number: 20240087881Abstract: Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.Type: ApplicationFiled: August 26, 2022Publication date: March 14, 2024Applicant: Applied Materials, Inc.Inventors: Michael Haverty, Shruba Gangopadhyay, Bo Xie, Yijun Liu, Ruitong Xiong, Rui Lu, Xiaobo Li, Li-Qun Xia, Lakmal C. Kalutarage, Lauren Bagby
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Publication number: 20240087880Abstract: Embodiments include semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.Type: ApplicationFiled: August 26, 2022Publication date: March 14, 2024Applicant: Applied Materials, Inc.Inventors: Shruba Gangopadhyay, Bhaskar Jyoti Bhuyan, Michael Haverty, Bo Xie, Li-Qun Xia, Rui Lu, Yijun Liu, Ruitong Xiong, Xiaobo Li, Lakmal C. Kalutarage, Lauren Bagby
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Publication number: 20240038833Abstract: Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2), ammonia (NH3), and combinations thereof.Type: ApplicationFiled: July 14, 2023Publication date: February 1, 2024Applicant: Applied Materials, Inc.Inventors: Fredrick Fishburn, Tomohiko Kitajima, Qian Fu, Srinivas Guggilla, Hang Yu, Jun Feng, Shih Chung Chen, Lakmal C. Kalutarage, Jayden Potter, Karthik Janakiraman, Deenesh Padhi, Yifeng Zhou, Yufeng Jiang, Sung-Kwan Kang
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Publication number: 20230295794Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.Type: ApplicationFiled: May 24, 2023Publication date: September 21, 2023Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
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Publication number: 20230295803Abstract: Methods of forming metal-containing films for electronic devices (e.g., logic devices and/or memory devices) and methods for reducing equivalent oxide thickness (EOT) penalty in electronic devices are disclosed. The methods comprise exposing a substrate surface to a metal precursor, such as titanium chloride (TiCl4), a reducing agent, such as a cyclic 1,4-diene, and a reactant, ammonia (NH3), either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.Type: ApplicationFiled: April 14, 2023Publication date: September 21, 2023Applicant: Applied Materials, Inc.Inventors: Haoming Yan, Shih Chung Chen, Mandyam Sriram, EunKee Hong, Janardhan Devrajan, Lakmal C. Kalutarage, Yongjing Lin, Lisa Michelle Mandrell, Arkaprava Dan
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Publication number: 20230235451Abstract: Molybdenum-DAD precursors are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum-DAD precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.Type: ApplicationFiled: January 24, 2023Publication date: July 27, 2023Applicants: Applied Materials, Inc., Wayne State UniversityInventors: Thomas Joseph Knisley, Martha Serna Villacis, Mark Saly, Lakmal C. Kalutarage, Charles H. Winter, Matthew Bertram Edward Griffiths, Shalini Tripathi
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Patent number: 11702733Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.Type: GrantFiled: May 7, 2021Date of Patent: July 18, 2023Assignee: Applied Materials, Inc.Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
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Publication number: 20220384176Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.Type: ApplicationFiled: July 26, 2022Publication date: December 1, 2022Applicant: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Lakmal C. Kalutarage, Thomas Joseph Knisley
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Patent number: 11515149Abstract: Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.Type: GrantFiled: July 19, 2017Date of Patent: November 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Lakmal C. Kalutarage, Mark Saly, David Thompson, Abhijit Basu Mallick, Tejasvi Ashok, Pramit Manna
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Publication number: 20220372616Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.Type: ApplicationFiled: May 7, 2021Publication date: November 24, 2022Applicant: Applied Materials, Inc.Inventors: Lakmal C. Kalutarage, Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Feng Q. Liu, Mark Saly, Michael Haverty, Muthukumar Kaliappan
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Publication number: 20220301883Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.Type: ApplicationFiled: June 9, 2022Publication date: September 22, 2022Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
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Publication number: 20220259734Abstract: Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.Type: ApplicationFiled: February 16, 2021Publication date: August 18, 2022Applicant: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Lakmal C. Kalutarage, Thomas Knisley
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Patent number: 11417515Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.Type: GrantFiled: July 17, 2018Date of Patent: August 16, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Lakmal C. Kalutarage, Thomas Knisley
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Patent number: 11398388Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.Type: GrantFiled: September 8, 2020Date of Patent: July 26, 2022Assignee: Applied Materials, Inc.Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
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Patent number: 11393678Abstract: Methods for deposition of high-hardness low-? dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200° C. to about 500° C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.Type: GrantFiled: August 10, 2020Date of Patent: July 19, 2022Assignee: Applied Materials, Inc.Inventors: William J. Durand, Mark Saly, Lakmal C. Kalutarage, Kang Sub Yim, Shaunak Mukherjee
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Patent number: 11371136Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. The blocking layer is exposed to a polymer initiator to form a networked blocking layer. A layer is selectively formed on the second surface. The blocking layer inhibits deposition on the first surface. The networked layer may then optionally be removed.Type: GrantFiled: September 19, 2018Date of Patent: June 28, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Lakmal C. Kalutarage, Rana Howlader
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Patent number: 11289328Abstract: Chromium containing precursors and methods of forming chromium-containing thin films are described. The chromium precursor has a chromium-diazadiene bond or cyclopentadienyl ligand and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic chromium film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising chromium with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described. Methods of filling gaps in a substrate with a chromium-containing film are also described.Type: GrantFiled: June 28, 2019Date of Patent: March 29, 2022Assignee: Applied Materials Inc.Inventors: Thomas Knisley, Mark Saly, Lakmal C. Kalutarage, David Thompson
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Publication number: 20220076960Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.Type: ApplicationFiled: September 8, 2020Publication date: March 10, 2022Applicant: Applied Materials, Inc.Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly