Patents by Inventor Lam Mach

Lam Mach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240146012
    Abstract: This invention is a broadband intra cavity laser mode convertor. This is a hologram of a complex phase mask imprinted inside of a volume Bragg grating with wide spectral width recorded in photo-thermo-refractive (PTR) glass. This hologram is a broadband phase converting monolithic device capable of use over a broad wavelength range at high instant and average power because of low absorption coefficient and low nonlinear refractive index of PTR glass. Therefore, it can be used for broadband optical beam transformations and conversion of modes in laser resonators.
    Type: Application
    Filed: March 7, 2022
    Publication date: May 2, 2024
    Applicant: IPG PHOTONICS CORPORATION
    Inventors: Ivan DIVLIANSKY, Leonid GLEBOV, Lam MACH, Oussama MHIBIK, Nafiseh MOHAMMADDIAN
  • Publication number: 20230236494
    Abstract: A phase transformation device may include a solid photosensitive material having a planar input facet and one or more reflective holographic phase masks (RHPMs) within a volume of the solid photosensitive material, where a particular one of the one or more RHPMs is formed as a periodic refractive index variation of the photosensitive material along a particular grating vector and further with a particular non-planar lateral phase profile, where at least one of a period of the refractive index variation along the grating vector or an orientation of the grating vector for each of the one or more RHPMs are arranged to reflect via Bragg diffraction light incident on the input facet that satisfies a Bragg condition, and where a phase distribution of the reflected light from a particular one of the one or more RHPMs is modified by the associated non-planar lateral phase profile.
    Type: Application
    Filed: January 25, 2023
    Publication date: July 27, 2023
    Inventors: Ivan Divliansky, Leonid Glebov, Lam Mach, Oussama Mhibik
  • Patent number: 10790631
    Abstract: The present invention demonstrates a technique for achieving milli-joule level and higher energy, broad bandwidth laser pulses centered around 2.4 micrometer with a kilohertz and other repetition rate. The key to such technique is to start with a broadband micro-joule level seed laser at around 2.4 micrometer, which could be generated through difference frequency generation, four-wave mixing process and other methods. This micro-joule level seed laser could then be amplified to above one milli-joule through chirped pulse amplification in a Cr2+:ZnSe or Cr2+:ZnS crystal pumped by a commercially available Ho:YAG or other appropriate suitable lasers. Due to the high seed energy, fewer gain passes are needed to achieve a milli-joule level output thus significantly simplifies laser architectures. Furthermore, gain narrowing effect in a typical chirped pulse amplifier is also mitigated and thus enable a broadband output.
    Type: Grant
    Filed: July 11, 2018
    Date of Patent: September 29, 2020
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventors: Zenghu Chang, Xiaoming Ren, Yanchun Yin, Lam Mach
  • Publication number: 20190020166
    Abstract: The present invention demonstrates a technique for achieving milli-joule level and higher energy, broad bandwidth laser pulses centered around 2.4 micrometer with a kilohertz and other repetition rate. The key to such technique is to start with a broadband micro-joule level seed laser at around 2.4 micrometer, which could be generated through difference frequency generation, four-wave mixing process and other methods. This micro-joule level seed laser could then be amplified to above one milli-joule through chirped pulse amplification in a Cr2+:ZnSe or Cr2+:ZnS crystal pumped by a commercially available Ho:YAG or other appropriate suitable lasers. Due to the high seed energy, fewer gain passes are needed to achieve a milli-joule level output thus significantly simplifies laser architectures. Furthermore, gain narrowing effect in a typical chirped pulse amplifier is also mitigated and thus enable a broadband output.
    Type: Application
    Filed: July 11, 2018
    Publication date: January 17, 2019
    Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
    Inventors: Zenghu Chang, Xiaoming Ren, Yanchun Yin, Lam Mach