Abstract: In some embodiments, a method sends a set of first requests for a set of first segments of a video in a playback session. A first protocol from a plurality of protocols is specified in at least one of the set of first requests. The set of first segments is received. The method determines whether to switch from using the first protocol to a second protocol in the playback session based on receiving the set of first segments. When switching to the second protocol, the method sends a second request in the playback session, wherein the second request indicates the second protocol is to be used to send a second segment of the video.

Abstract: A single-mode optical device, including a first region, and a second region laterally disposed about the first region, and including an absorbing layer and an isolation layer between the absorbing layer and the first region, wherein the thickness of the isolation layer is selected to control optical loss from the first region to the absorbing layer in the second region and thereby to attenuate one or more high order lateral optical modes of the device. The one or more high order lateral optical modes are attenuated relative to the fundamental lateral mode to provide the device with a high kink power. The device can be a 980 nm ridge diode laser where the thickness of an oxide insulating layer around the ridge is selected to control optical losses into a gold contact layer and thereby attenuate the first order lateral mode, providing the laser with a kink power of at least about 250 mW.

Abstract: A HDMI connector includes a dielectric housing, a plurality of terminals, a support board, an upper lid, a lower lid and wires. The dielectric housing has a plurality of terminal grooves extending from a front sidewall to a rear sidewall. The terminals are inserted into the terminal grooves. The support board connects with the rear sidewall of the dielectric housing. A plurality of channels are disposed on a top surface and a bottom surface thereon. The upper lid has a plurality of first clip grooves disposed on the lower surface, and a plurality of protrusions are formed therebetween. The lower lid has a plurality of second clip grooves disposed on the upper surface, and a plurality of protrusions are formed therebetween. The wires are arranged in the channels connecting with the terminals. The upper lid and the lower lid buckle with the channels to fix the wires in the channels.

Abstract: A method of disordering a quantum well heterostructure, including the step of irradiating the heterostructure with a particle beam, wherein the energy of the beam is such that the beam creates a substantially constant distribution of defects within the heterostructure. The irradiating particles can be ions or electrons, and the energy is preferably such that the irradiating particles pass through the heterostructure. Light ions such as hydrogen ions are preferred because they are readily available and produce substantially uniform distributions of point defects at relatively low energies. The method can be used to tune the wavelength range of an optoelectronic device including such a heterostructure, such as a photodetector.

Abstract: A method of disordering a quantum well heterostructure, including the step of irradiating the heterostructure with a particle beam, wherein the energy of the beam is such that the beam creates a substantially constant distribution of defects within the heterostructure. The irradiating particles can be ions or electrons, and the energy is preferably such that the irradiating particles pass through the heterostructure. Light ions such as hydrogen ions are preferred because they are readily available and produce substantially uniform distributions of point defects at relatively low energies. The method can be used to tune the wavelength range of an optoelectronic device including such a heterostructure, such as a photodetector.

Abstract: A single-mode optical device, including a first region, and a second region laterally disposed about the first region, and including an absorbing layer and an isolation layer between the absorbing layer and the first region, wherein the thickness of the isolation layer is selected to control optical loss from the first region to the absorbing layer in the second region and thereby to attenuate one or more high order lateral optical modes of the device. The one or more high order lateral optical modes are attenuated relative to the fundamental lateral mode to provide the device with a high kink power. The device can be a 980 nm ridge diode laser where the thickness of an oxide insulating layer around the ridge is selected to control optical losses into a gold contact layer and thereby attenuate the first order lateral mode, providing the laser with a kink power of at least about 250 mW.