Patents by Inventor Lan Jin

Lan Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11948207
    Abstract: A method for automatically recommending to a user of a software application one or more categories of a plurality of different categories of tax deductible expenses includes providing input data to a trained machine learning model and receiving output from the trained machine learning model based on the input data. The output includes a recommendation for the user that includes (i) one or more categories of the plurality of different categories of tax deductible expenses; and (ii) a plurality of examples of tax deductible expenses for each of the one or more categories. The method includes receiving feedback from the user on the recommendation and generating updated training data for the trained machine learning model based on the feedback.
    Type: Grant
    Filed: July 31, 2023
    Date of Patent: April 2, 2024
    Assignee: Intuit, Inc.
    Inventors: Shankar Sankararaman, Lan Jin, Shivani Gowrishankr, Jaspreet Singh
  • Patent number: 11935283
    Abstract: Disclosed are a cranial CT-based grading method and a corresponding system, which relate to the field of medical imaging. The cranial CT-based grading method as disclosed solves the problems of relatively great subjective disparities and poor operability in eye-balling ASPECTS assessment. The grading method includes: determining frames where target image slices are located from to-be-processed multi-frame cranial CT data; extracting target areas; performing infarct judgment on each target area included in the target areas to output an infarct judgment outcome regarding the target area; and outputting a grading outcome based on infarct judgment outcomes regarding all target areas.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: March 19, 2024
    Assignee: UNION STRONG (BEIJING) TECHNOLOGY CO. LTD.
    Inventors: Hailan Jin, Ling Song, Yin Yin, Guangming Yang, Yangyang Yao, Pengxiang Li, Lan Qin
  • Patent number: 10446666
    Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming an epitaxial layer in a substrate. The epitaxial layer includes a first region having a first crystal plane and a second region having a second crystal plane, and indices of lattice planes of the first crystal plane and the second crystal plane are different. The method also includes forming a capping structure including one or more capping layers on the first region and the second region. Forming the capping layer includes forming an initial capping layer having different thicknesses on the first region and the second region; and etching the initial capping layer to reduce a thickness difference between the initial capping layer on the first region and the initial capping layer on the second region. Further, the method includes forming an electrode electrically connected to the capping structure.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: October 15, 2019
    Assignees: Semiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
    Inventor: Lan Jin
  • Patent number: 10226711
    Abstract: An arbitrarily shaped skeleton, comprising: a main frame body and limbs disposed on the main frame body; wherein the main frame body is formed with mounting holes for mounting the limbs, one end of the limb is mounted in the mounting hole, and the limb is made of a telescopic structure which can be arbitrarily bent and stretched. The doll made by the skeleton can make a variety of poses, and when the limbs are stretched, the limbs can have the sound of plastic deformation, it is more interesting. The main frame and limbs are made of plastic injection molding, and its cost is low and easy to assemble, simplifying the production process and having more market competitiveness.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: March 12, 2019
    Inventor: Mei Lan Jin
  • Publication number: 20190070516
    Abstract: An arbitrarily shaped skeleton, comprising: a main frame body and limbs disposed on the main frame body; wherein the main frame body is formed with mounting holes for mounting the limbs, one end of the limb is mounted in the mounting hole, and the limb is made of a telescopic structure which can be arbitrarily bent and stretched. The doll made by the skeleton can make a variety of poses, and when the limbs are stretched, the limbs can have the sound of plastic deformation, it is more interesting. The main frame and limbs are made of plastic injection molding, and its cost is low and easy to assemble, simplifying the production process and having more market competitiveness.
    Type: Application
    Filed: September 1, 2017
    Publication date: March 7, 2019
    Inventor: Mei Lan Jin
  • Patent number: 10090156
    Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a substrate including a first region for forming a first transistor and a second region for forming a second transistor. The method also includes forming a first stress layer in the substrate in the first region and a second stress layer in the substrate in the second region, wherein top surfaces of the first stress layer and the second stress layer are above a surface of the substrate. Further, the method includes forming a cover layer on each of the first stress layer and the second stress layer, and removing portions of the cover layer formed on adjacent side surfaces of the first stress layer and the second stress layer.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: October 2, 2018
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventor: Lan Jin
  • Patent number: 10090170
    Abstract: A method is provided for fabricating a semiconductor structure. The method includes forming a base substrate including a substrate and a stress layer formed in the substrate, where a top surface of the stress layer is higher than a surface of the substrate. The method also includes forming a first cover layer, where a first growth rate difference exists between growth rates of the first cover layer on the top surface of the stress layer and the first cover layer on a side surface of the stress layer. Further, the method includes forming a second cover layer, where a second growth rate difference exists between growth rates of the second cover layer on the top surface of the stress layer and the second cover layer on the side surface of the stress layer, and the second growth rate difference is larger than the first growth rate difference.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: October 2, 2018
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventor: Lan Jin
  • Publication number: 20180261684
    Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming an epitaxial layer in a substrate. The epitaxial layer includes a first region having a first crystal plane and a second region having a second crystal plane, and indices of lattice planes of the first crystal plane and the second crystal plane are different. The method also includes forming a capping structure including one or more capping layers on the first region and the second region. Forming the capping layer includes forming an initial capping layer having different thicknesses on the first region and the second region; and etching the initial capping layer to reduce a thickness difference between the initial capping layer on the first region and the initial capping layer on the second region. Further, the method includes forming an electrode electrically connected to the capping structure.
    Type: Application
    Filed: March 5, 2018
    Publication date: September 13, 2018
    Inventor: Lan JIN
  • Publication number: 20170330758
    Abstract: A method is provided for fabricating a semiconductor structure. The method includes providing a substrate including a first region for forming a first transistor and a second region for forming a second transistor. The method also includes forming a first stress layer in the substrate in the first region and a second stress layer in the substrate in the second region, wherein top surfaces of the first stress layer and the second stress layer are above a surface of the substrate. Further, the method includes forming a cover layer on each of the first stress layer and the second stress layer, and removing portions of the cover layer formed on adjacent side surfaces of the first stress layer and the second stress layer.
    Type: Application
    Filed: April 3, 2017
    Publication date: November 16, 2017
    Inventor: Lan JIN
  • Publication number: 20170330765
    Abstract: A method is provided for fabricating a semiconductor structure. The method includes forming a base substrate including a substrate and a stress layer formed in the substrate, where a top surface of the stress layer is higher than a surface of the substrate. The method also includes forming a first cover layer, where a first growth rate difference exists between growth rates of the first cover layer on the top surface of the stress layer and the first cover layer on a side surface of the stress layer. Further, the method includes forming a second cover layer, where a second growth rate difference exists between growth rates of the second cover layer on the top surface of the stress layer and the second cover layer on the side surface of the stress layer, and the second growth rate difference is larger than the first growth rate difference.
    Type: Application
    Filed: April 3, 2017
    Publication date: November 16, 2017
    Inventor: Lan JIN
  • Patent number: 9576714
    Abstract: A magnetic actuator includes: a movable unit, movable between a first position and a second position, and including an integrally formed eddy-current component and first magnet yoke component; a second magnet yoke component to form a magnetic circuit with the first magnet yoke component; an electromagnetic coil capable of generating an exciting magnetic field when being energized, magnetic lines generated thereby being energized penetrating the magnetic circuit formed by the first and second magnet yoke components; an eddy-current coil to enable an eddy current to be generated in the eddy-current component, to produce an electromagnetic repulsive force to the movable unit; and a permanent magnetic holding component to hold the movable unit in the first position or the second position. The magnetic actuator can simplify the actuator, reduce the number of components and the size thereof, as well as reducing the energy consumption and improving the stability thereof.
    Type: Grant
    Filed: July 11, 2013
    Date of Patent: February 21, 2017
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Jian Cheng, Ying Hua Song, Lan Jin Wang, Chao Yang, Ji Long Yao, Yan Feng Zhao
  • Patent number: 8439513
    Abstract: The present application presents a light emitting diode module comprising a substrate including a first insulating layer, a second insulating layer, and a metal layer between the first and the second insulating layers; a groove formed at the first insulating layer for exposing the metal layer; and a light emitting element disposed at the groove, and including an LED chip and body part surrounding the LED chip, wherein the LED chip contacts the metal layer for radiating heat.
    Type: Grant
    Filed: August 24, 2009
    Date of Patent: May 14, 2013
    Assignee: LG Display Co., Ltd.
    Inventors: Jisu Yoon, Kyeongkun Jang, Jaeho Lee, Kiseong Kim, Minsu Cho, Lan Jin
  • Publication number: 20100165601
    Abstract: The present application presents a light emitting diode module comprising a substrate including a first insulating layer, a second insulating layer, and a metal layer between the first and the second insulating layers; a groove formed at the first insulating layer for exposing the metal layer; and a light emitting element disposed at the groove, and including an LED chip and body part surrounding the LED chip, wherein the LED chip contacts the metal layer for radiating heat.
    Type: Application
    Filed: August 24, 2009
    Publication date: July 1, 2010
    Inventors: Jisu Yoon, Kyeongkun Jang, Jaeho Lee, Kiseong Kim, Minsu Cho, Lan Jin
  • Patent number: 7464982
    Abstract: A vehicle covering device having a housing integral with an axle having a folding crank handle to utilize a reeling action useful in the withdrawing and retracting of a folding cover comprised of a sheet like material that when withdrawn can be expanded to cover a vehicles body by manipulation of an end rod attached to said folding covers end portion that is pulled through the jam of a trunk and over a vehicles forward body to effectively protect said vehicle. Additionally the device has base elements integral to its housing for providing support and if desired a secondary rear folding cover that may withdrawn in the same manner that may be utilized to cover the rear or trunk portion of a vehicle as well.
    Type: Grant
    Filed: January 10, 2007
    Date of Patent: December 16, 2008
    Inventors: Xiaogu Lin, Lan Jin, YuLian Zhao