Abstract: The present invention provides a WDM optical system that includes a tunable filter for selecting one or more optical channels from a WDM optical signal. A portion of a WDM signal enters a first optical filter stage that exhibits a periodic transmission spectrum and possesses individually tunable filter elements. A second optical filter stage receives throughput from the first filter stage and has a periodic transmission spectrum and individually tunable filter elements. A controller electrically communicates with the optical filter to select individual optical channels from the portion of the wavelength division multiplexed optical signal received through the filter input port; each selected optical channel is output via a filter throughput port. In an exemplary embodiment, each tunable filter element is a micro-ring resonator and the micro-ring resonators in the first filter stage have a different free spectral range (FSR) than the micro-ring resonators of the second filter stage.

Abstract: Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

Abstract: Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

Abstract: Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

Abstract: Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiOxNy:D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.