Patents by Inventor Lance S. Scudder

Lance S. Scudder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reducing or eliminating pre-amorphization in transistor manufacture
    Patent number: 9514940
    Abstract: A method for fabricating field effect transistors using carbon doped silicon layers to substantially reduce the diffusion of a doped screen layer formed below a substantially undoped channel layer includes forming an in-situ epitaxial carbon doped silicon substrate that is doped to form the screen layer in the carbon doped silicon substrate and forming the substantially undoped silicon layer above the carbon doped silicon substrate. The method may include implanting carbon below the screen layer and forming a thin layer of in-situ epitaxial carbon doped silicon above the screen layer. The screen layer may be formed either in a silicon substrate layer or the carbon doped silicon substrate.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: December 6, 2016
    Assignee: Mie Fujitsu Semiconductor Limited
    Inventors: Lance S. Scudder, Pushkar Ranade, Charles Stager, Urupattur C. Sridharan, Dalong Zhao
  • REDUCING OR ELIMINATING PRE-AMORPHIZATION IN TRANSISTOR MANUFACTURE
    Publication number: 20160268133
    Abstract: A method for fabricating field effect transistors using carbon doped silicon layers to substantially reduce the diffusion of a doped screen layer formed below a substantially undoped channel layer includes forming an in-situ epitaxial carbon doped silicon substrate that is doped to form the screen layer in the carbon doped silicon substrate and forming the substantially undoped silicon layer above the carbon doped silicon substrate. The method may include implanting carbon below the screen layer and forming a thin layer of in-situ epitaxial carbon doped silicon above the screen layer. The screen layer may be formed either in a silicon substrate layer or the carbon doped silicon substrate.
    Type: Application
    Filed: January 20, 2015
    Publication date: September 15, 2016
    Inventors: Lance S. Scudder, Pushkar Ranade, Charles Stager, Urupattur C. Sridharan, Dalong Zhao
  • Reducing or eliminating pre-amorphization in transistor manufacture
    Patent number: 8937005
    Abstract: A method for fabricating field effect transistors using carbon doped silicon layers to substantially reduce the diffusion of a doped screen layer formed below a substantially undoped channel layer includes forming an in-situ epitaxial carbon doped silicon substrate that is doped to form the screen layer in the carbon doped silicon substrate and forming the substantially undoped silicon layer above the carbon doped silicon substrate. The method may include implanting carbon below the screen layer and forming a thin layer of in-situ epitaxial carbon doped silicon above the screen layer. The screen layer may be formed either in a silicon substrate layer or the carbon doped silicon substrate.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: January 20, 2015
    Assignee: SuVolta, Inc.
    Inventors: Lance S. Scudder, Pushkar Ranade, Charles Stager, Urupattur C. Sridharan, Dalong Zhao
  • REDUCING OR ELIMINATING PRE-AMORPHIZATION IN TRANSISTOR MANUFACTURE
    Publication number: 20140038386
    Abstract: A method for fabricating field effect transistors using carbon doped silicon layers to substantially reduce the diffusion of a doped screen layer formed below a substantially undoped channel layer includes forming an in-situ epitaxial carbon doped silicon substrate that is doped to form the screen layer in the carbon doped silicon substrate and forming the substantially undoped silicon layer above the carbon doped silicon substrate. The method may include implanting carbon below the screen layer and forming a thin layer of in-situ epitaxial carbon doped silicon above the screen layer. The screen layer may be formed either in a silicon substrate layer or the carbon doped silicon substrate.
    Type: Application
    Filed: October 4, 2013
    Publication date: February 6, 2014
    Applicant: SuVolta, Inc.
    Inventors: Lance S. Scudder, Pushkar Ranade, Charles Stager, Urupattur C. Sridharan, Dalong Zhao