Abstract: A method is described to fabricate RF inductor devices on a silicon substrate. Low-k or other dielectric material is deposited and patterned to form inductor lower plate trenches. Trenches are lined with barrier film such as TaN, filled with copper, and excess metal planarized using chemical mechanical polishing (CMP). Second layer of a dielectric material is deposited and patterned to form via-hole/trenches. Via-hole/trench patterns are filled with barrier material, and the dielectric film in between the via-hole/trenches is etched to form a second set of trenches. These trenches are filled with copper and planarized. A third layer of a dielectric film is deposited and patterned to form via-hole/trenches. Via-hole/trenches are then filled with barrier material, and the dielectric film between via-hole/trench patterns etched to form a third set of trenches. These trenches are filled with copper metal and excess metal removed by CMP to form said RF inductor.

Abstract: A new method is provided for creating air gaps in a layer of IMD. A first layer of dielectric is deposited over a surface; the surface contains metal points of contact. Trenches are etched in this first layer of dielectric. The trenches are filled with a first layer of nitride or disposable solid and polished. A second layer of dielectric is deposited over the first layer of dielectric. Trenches are formed in the second layer of dielectric, a second layer of nitride or disposable solid is deposited over the second layer of dielectric. The layer of nitride or disposable solid is polished. A thin layer of oxide is deposited over the surface of the second layer of dielectric. The thin layer of oxide is masked and etched thereby creating openings in this thin layer of oxide, these openings align with the points of intersect of the trenches in the first layer of dielectric and in the second layer of dielectric. The nitride or removable solid is removed from the trenches.

Abstract: A novel method for forming a C54 phase titanium disilicide film in the fabrication of an integrated circuit is described. A semiconductor substrate is provided having silicon regions to be silicided. A titanium layer is deposited overlying the silicon regions to be silicided. The substrate is subjected to a first annealing whereby the titanium is transformed to phase C40 titanium disilicide where it overlies the silicon regions and wherein the titanium not overlying the silicon regions is unreacted. The unreacted titanium layer is removed. The substrate is subjected to a second annealing whereby the phase C40 titanium disilicide is transformed to phase C54 titanium disilicide to complete formation of a phase 54 titanium disilicide film in the manufacture of an integrated circuit.

Abstract: A novel complimentary shielded inductor on a semiconductor is disclosed. A region of electrically floating high resistive material is deposited between the inductor and the semiconductor substrate. The high resistive shield is patterned with a number of gaps, such that a current induced in the shield by the inductor does not have a closed loop path. The high resistive floating shield compliments a grounded low resistive shield to achieve higher performance inductors. In this fashion, noise in the substrate is reduced. The novel complimentary shield does not significantly degrade the figures of merit of the inductor, such as, quality factor and resonance frequency. In one embodiment, the grounded shield is made of patterned N-well (or P-well) structures. In still another embodiment, the low resistive electrically grounded shield is made of patterned Silicide, which may be formed on portions of the substrate itself.

Abstract: A method to form a closely-spaced, vertical NMOS and PMOS transistor pair in an integrated circuit device is achieved. A substrate comprise silicon implanted oxide (SIMOX) wherein an oxide layer is sandwiched between underlying and overlying silicon layers. Ions are selectively implanted into a first part of the overlying silicon layer to form a drain, channel region, and source for an NMOS transistor. The drain is formed directly overlying the oxide layer, the channel region is formed overlying the drain, and the source is formed overlying the channel region. Ions are selectively implanted into a second part of the overlying silicon layer to form a drain, channel region, and source for a PMOS transistor. The drain is formed directly overlying the oxide layer, the PMOS channel region is formed overlying the drain, and the source is formed overlying the channel region. The PMOS transistor drain is in contact with said NMOS transistor drain.

Abstract: In accordance with the objectives of the invention a new method is provided for creating air gaps in a layer of IMD. First and second layers of dielectric are successively deposited over a surface; the surface contains metal lines running in an Y-direction. Trenches are etched in the first and second layer of dielectric in an X and Y-direction respectively. The trenches are filled with a layer of nitride and polished. A thin layer of oxide is deposited over the surface of the second layer of dielectric. Openings are created through the thin layer of oxide that align with the points of intersect of the nitride in the trenches in the layers of dielectric. The nitride is removed from the trenches by a wet etch, thereby opening trenches in the layers of dielectric with both sets of trenches being interconnected. The openings in the thin layer of oxide are closed, leaving a network of trenches containing air in the two layers of dielectric.

Abstract: An improved new process for fabricating multilevel interconnected vertical channels and horizontal channels or tunnels. The method has broad applications in semiconductors, for copper interconnects and inductors, as well as, in the field of bio-sensors for mini- or micro-columns in gas or liquid separation, gas/liquid chromatography, and in capillary separation techniques. In addition, special techniques are described to deposit by atomic layer deposition, ALD, a copper barrier layer and seed layer for electroless copper plating, filling trench and channel or tunnel openings in a type of damascene process, to form copper interconnects and inductors.

Abstract: A method for forming a gate dielectric having regions with different dielectric constants. A low-K dielectric layer is formed over a semiconductor structure. A dummy dielectric layer is formed over the low-K dielectric layer. The dummy dielectric layer and low-K dielectric layer are patterned to form an opening. The dummy dielectric layer is isontropically etched selectively to the low-K dielectric layer to form a stepped gate opening. A high-K dielectric layer is formed over the dummy dielectric and in the stepped gate opening. A gate electrode is formed on the high-K dielectric layer.

Abstract: A first method of reducing semiconductor device substrate effects comprising the following steps. O+ or O2+ are selectively implanted into a silicon substrate to form a silicon-damaged silicon oxide region. One or more devices are formed over the silicon substrate proximate the silicon-damaged silicon oxide region within at least one upper dielectric layer. A passivation layer is formed over the at least one upper dielectric layer. The passivation layer and the at least one upper dielectric layer are patterned to form a trench exposing a portion of the silicon substrate over the silicon-damaged silicon oxide region. The silicon-damaged silicon oxide region is selectively etched to form a channel continuous and contiguous with the trench whereby the channel reduces the substrate effects of the one or more semiconductor devices.

Abstract: An encapsulated copper plug on a doped silicon semiconductor substrate has a substrate surface, covered with insulation, with a plug hole with a diffusion barrier formed on the walls and the bottom of the hole to the top of the hole. The plug hole is partially filled with an electrolessly deposited copper metal plug. An encapsulating metal deposit caps the plug without any intervening oxidation and degradation. In a transition from copper to a codeposit of copper, an encapsulating Pt, Pd, and/or Ag metal deposits in the electroless bath without oxidation and degradation followed by a pure deposit of the encapsulating metal layer to cap the plug.

Abstract: A method for forming shallow trench isolation (STI) with a higher aspect ratio is given. This method allows the formation of narrower and deeper trench isolation regions while avoiding substrate damage due to excessive etching and severe microloading effects. In addition, it yields uniform depth trenches while avoiding problems of etch residue at the bottom of the trench. This method is achieved by using a process where a trench is etched, and an oxide layer grown along the bottom and sidewalls of the trench. Oxygen or field isolation ions are then implanted into the bottom of the trench. A nitride spacer is then formed along the bottom and sidewalls of the trench, followed by an isotropic etch removing the nitride and oxide from the bottom of the trench. An oxide deposition then fills the trench, followed by a planarization step completing the isolation structure.

Abstract: An encapsulated copper plug on a doped silicon semiconductor substrate has a substrate surface, covered with insulation, with a plug hole with a diffusion barrier formed on the walls and the bottom of the hole to the top of the hole. The plug hole is partially filled with an electrolessly deposited copper metal plug. An encapsulating metal deposit caps the plug without any intervening oxidation and degradation. In a transition from copper to a codeposit of copper, an encapsulating Pt, Pd, and/or Ag metal deposits in the electroless bath without oxidation and degradation followed by a pure deposit of the encapsulating metal layer to cap the plug.

Abstract: A Flash memory is provided having a trilayer structure of rapid thermal oxide/germanium (Ge) nanocrystals in silicon dioxide (SiO2)/sputtered SiO2 cap with demonstrated via capacitance versus voltage (C-V) measurements having memory hysteresis due to Ge nanocrystals in the middle layer of the trilayer structure. The Ge nanocrystals are synthesized by rapid thermal annealing of a co-sputtered Ge+SiO2 layer.

Abstract: A method for forming a thicker silicide over a MOS device is described. This is achieved using a process where the gate structure is formed by conventional techniques upon a substrate. A low-energy implantation is performed to form lightly doped source and drain (LDD) regions in the substrate in the areas not protected by the gate structure. A first spacer composed of tetraethyl-oxysilane (TEOS oxide), for example, is formed along the sidewalls of the gate structure. A second low-energy implantation is performed to form the source and drain (S/D) in the areas not protected by the gate structure and first spacer. A layer of metal such as titanium (Ti), for example, is then deposited over the surface of the gate structure. A second sidewall spacer composed of titanium nitride (TiN), for example, is formed along the sidewalls of the gate structure covering the metal over the first sidewall spacer and covering the metal over isolation regions.

Abstract: In accordance with the objects of this invention, a new method of fabricating a polysilicon gate transistor is achieved. An alternating aperture phase shift mask (AAPSM) is used to pattern polysilicon gates in a single exposure without a trim mask. A semiconductor substrate is provided. A gate dielectric layer is deposited. A polysilicon layer is deposited. The polysilicon layer, the gate dielectric layer and the semiconductor substrate are patterned to form trenches for planned shallow trench isolations (STI). A trench oxide layer is deposited filling the trenches. The trench oxide layer is polished down to the top surface of the polysilicon layer to complete the STI. A photoresist layer is deposited and patterned to form a feature mask for planned polysilicon gates. The patterning is by a single exposure using an AAPSM mask. Unwanted features in the photoresist pattern that are caused by phase conflicts overlie the STI. The polysilicon layer is etched to form the polysilicon gates.

Abstract: A method of reducing substrate coupling and noise for one or more RFCMOS components comprising the following steps. A substrate having a frontside and a backside is provided. One or more RFCMOS components are formed over the substrate. One or more isolation structures are formed within the substrate proximate the one or more RFCOMS components. The backside of the substrate is etched to form respective trenches within the substrate and over at least the one or more isolation structures. The respective trenches are filled with dielectric material whereby the substrate coupling and noise for the one or more RFCMOS components are reduced.

Abstract: A novel complimentary shielded inductor on a semiconductor is disclosed. A region of electrically floating high resistive material is deposited between the inductor and the semiconductor substrate. The high resistive shield is patterned with a number of gaps, such that a current induced in the shield by the inductor does not have a closed loop path. The high resistive floating shield compliments a grounded low resistive shield to achieve higher performance inductors. In this fashion, noise in the substrate is reduced. The novel complimentary shield does not significantly degrade the figures of merit of the inductor, such as, quality factor and resonance frequency. In one embodiment, the grounded shield is made of patterned N-well (or P-well) structures. In still another embodiment, the low resistive electrically grounded shield is made of patterned Silicide, which may be formed on portions of the substrate itself.

Abstract: A new method of forming shallow trench isolations without using CMP is described. A plurality of isolation trenches are etched through an etch stop layer into the semiconductor substrate leaving narrow and wide active areas between the trenches. An oxide layer is deposited over the etch stop layer and within the trenches using a high density plasma chemical vapor deposition process (HDP-CVD) having a deposition component and a sputtering component wherein after the oxide layer fills the trenches, the deposition component is discontinued while continuing the sputtering component until the oxide layer is at a desired depth. In one method, the oxide layer overlying the etch stop layer in the wide active areas is etched away. The etch stop layer and oxide layer residues are removed to complete planarized STI regions.

Abstract: A method of forming shallow junction MOSFETs is achieved. A gate oxide layer is formed overlying a substrate. A first electrode layer, of polysilicon or metal, is deposited. A silicon nitride layer is deposited. The silicon nitride layer and the first electrode layer are etched through to form temporary MOSFET gates. Ions are implanted into the substrate to form lightly doped junctions. A spacer layer is deposited. The spacer layer and the gate oxide layer are anisotropically etched to form sidewall spacers. Ions are implanted into the substrate to form heavily doped junctions. The silicon nitride layer is etched away. A second electrode layer, of polysilicon or metal, is deposited overlying the substrate, the sidewall spacers, and the first polysilicon layer. The second electrode layer is polished down to the top surfaces of the sidewall spacers to complete the MOSFETs and to form permanent gates and conductive connections to the source and drain junctions.

Abstract: A method for forming a sub-quarter micron MOSFET having an elevated source/drain structure is described. A gate electrode is formed over a gate dielectric on a semiconductor substrate. Ions are implanted into the semiconductor substrate to form lightly doped regions using the gate electrode as a mask. Thereafter, dielectric spacers are formed on sidewalls of the gate electrode. A polysilicon layer is deposited overlying the semiconductor substrate, gate electrode, and dielectric spacers wherein the polysilicon layer is heavily doped. The polysilicon layer is etched back to leave polysilicon spacers on the dielectric spacers. Dopant is diffused from the polysilicon spacers into the semiconductor substrate to form source and drain regions underlying the polysilicon spacers.