Abstract: The present invention relates to masking pastes and methods for removing portions of the back electrode and photovoltaic junction from a photovoltaic laminate to create a partially transparent thin-film photovoltaic panel. Such panels may be useful in window and sun-roof applications. This method can be used to edge-delete and electrically isolate a photovoltaic panel and to reduce the reflectivity of the sun-facing substrate surface.

Abstract: The present invention relates to a chemical etching method to electrically isolate the edge from the interior of a thin-film photovoltaic panel comprising a substrate and a photovoltaic laminate. The method comprises a step to dispense an etching paste comprising two or more acids on the laminate periphery; an optional step to apply heat to the laminate; and a step to remove the etching paste. The method is further characterized by the chemical removal of at least two chemically distinctive layers of the laminate at the periphery where the etching paste is applied. The method may be used to produce a thin-film photovoltaic panel.

Abstract: A method for producing a thin-film solar cell with a cell level integrated bypass diode includes forming at least first, second and third series-connected cells on a support, each cell being a laminated structure comprising a junction layer including semiconducting material of a first and second type, a front electrode formed of a transparent conductive oxide resistant to an etchant disposed in electrical contact with the semiconducting material of the first type, and a back electrode in electrical contact with the semiconducting material of the second type. A portion of both the back electrode and the junction layer are separated from a selected parent solar cell. Using the separated portion of the back electrode the semiconducting material of the second type of the separated portion of the junction layer is connected to the semiconducting material of the first type of any one chosen solar cell in the array.

Abstract: A method for producing a thin-film solar cell with a cell level integrated bypass diode includes forming at least three series-connected solar cells, each cell being a laminated structure including semiconducting material of first and second types, a front electrode in contact with the material of the first type, and a back electrode in contact with the material of the second type. The bypass diode is formed by total separation from a selected parent cell. The material of the first type of the diode is connected to the material of the second type of any one chosen solar cell in the array. The material of the second type of the diode is connected with the material of the first type of the one chosen solar cell in the array so that the diode is connected in parallel and in opposition to the one chosen solar cell.

Abstract: The present invention relates to masking pastes and methods for removing portions of the back electrode and photovoltaic junction from a photovoltaic laminate to create a partially transparent thin-film photovoltaic panel. Such panels may be useful in window and sun-roof applications. This method can be used to edge-delete and electrically isolate a photovoltaic panel and to reduce the reflectivity of the sun-facing substrate surface.

Abstract: An array a thin-film solar cell with a cell level integrated bypass diode includes at least three series-connected solar cells; a bypass diode formed by total separation from a selected parent solar cell; a first conductor connecting the semiconducting material of the first type of the bypass diode with the semiconducting material of the second type of any one chosen solar cell in the array; and a second conductor connecting the semiconducting material of the second type of the bypass diode with the semiconducting material of the first type of any other chosen solar cell in the array, so that the bypass diode is connected in parallel and in opposition to both the one chosen solar cell and the other chosen solar cell.

Abstract: A thin-film solar cell having a photovoltaic junction layer including semiconducting material of first and second types, a front electrode formed of a transparent conductive oxide resistant to an etchant in contact with the semiconducting material of the first type, and a back electrode in contact with the semiconducting material of the second type. A bypass diode is supported on the support layer with at least the junction layer and the back electrode of the bypass diode being formed through separation from a selected parent solar cell. The separated portions of the junction layer and the back electrode of the diode are spaced from the selected parent solar cell in a direction substantially parallel to the axis of the parent cell. An conductor connects the semiconducting material of the second type of the diode with the semiconducting material of the first type of a chosen solar cell.

Abstract: A method for producing a thin-film solar cell with a cell level integrated bypass diode includes forming at least three series-connected solar cells, each cell being a laminated structure including semiconducting material of first and second types, a front electrode in contact with the material of the first type, and a back electrode in contact with the material of the second type. The bypass diode is formed by total separation from a selected parent cell. The material of the first type of the diode is connected to the material of the second type of any one chosen solar cell in the array. The material of the second type of the diode is connected with the material of the first type of the one chosen solar cell in the array so that the diode is connected in parallel and in opposition to the one chosen solar cell.

Abstract: A method for producing an array a thin-film solar cell with a cell level integrated bypass diode, the includes forming at least three series-connected solar cells; totally separating a bypass diode from a selected parent solar cell; connecting the semiconducting material of the first type of the photovoltaic junction layer of the bypass diode with the semiconducting material of the second type of any one chosen solar cell in the array; and connecting the semiconducting material of the second type of the photovoltaic junction layer of the bypass diode with the semiconducting material of the first type of any other chosen solar cell in the array so that the bypass diode is connected in parallel and in opposition to both the one chosen solar cell and the other chosen solar cell.

Abstract: An array of at least three series-connected solar cells has a cell level integrated bypass diode formed by total separation from a selected parent cell. The material of the first type of the diode is connected to the material of the second type of any one chosen solar cell in the array. The material of the second type of the diode is connected with the material of the first type of the one chosen solar cell in the array so that the diode is connected in parallel and in opposition to the one chosen solar cell.

Abstract: An array of series-connected solar cells each having a front electrode formed of a transparent conductive oxide resistant to an etchant that defines a first interface with a semiconducting material of the first type and a back electrode that defines a second interface with a semiconducting material of the second type. A bypass diode formed through separation from a parent cell has first and second interfaces that are substantially coplanar with the respective first and second interfaces defined in a first solar cell. A conductor connects the semiconducting material of the second type of the diode with the semiconducting material of the first type of a third solar cell in the array so that the diode is electrically connected in parallel and in opposition to the second and the third solar cells in the array and all solar cells connected intermediate therebetween.

Abstract: A method for producing a thin-film solar cell with a cell level integrated bypass diode includes forming at least first, second and third series-connected cells on a support, each cell being a laminated structure comprising a junction layer including semiconducting material of a first and second type, a front electrode formed of a transparent conductive oxide resistant to an etchant disposed in electrical contact with the semiconducting material of the first type, and a back electrode in electrical contact with the semiconducting material of the second type. A portion of both the back electrode and the junction layer are separated from a selected parent solar cell. Using the separated portion of the back electrode the semiconducting material of the second type of the separated portion of the junction layer is connected to the semiconducting material of the first type of any one chosen solar cell in the array.

Abstract: An array of series-connected solar cells is formed on a support layer with at least a two cells being adjacent and a third solar cell being either adjacent or separated from the second solar cell. A portion of the photovoltaic junction layer is separated from the first solar cell. The semiconducting material of the first type of the separated portion is electrically connected with the semiconducting material of the second type of the second solar cell through physical contact between the front electrode of the first cell and the back electrode of the second cell. The material of the second type of the separated portion of the junction layer is connected with the semiconducting material of the first type of the third cell to define a bypass diode that is in parallel and in opposition to the second and the third solar cells.

Abstract: This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.

Abstract: This invention relates to a method for the fabrication of electrical and electronic devices using a photoresist deposited in pre-existing through holes in a device structure and a thick film paste, and to the devices made by such method. The method allows thick film paste deposits in the corners of the holes. This invention also relates to devices made with thick film pastes that are patterned using a diffusion layer made from residual photoresist deposits in a hole.

Abstract: A field emission cathode assembly that has a UV-blocking, insulating dielectric layer (3.4).

Abstract: This invention relates to the electrochemical deposition of carbon nanotubes (“CNTs”) on a substrate using an electrochemical cell. A dispersion of a complex of CNTs and an anionic polymer is neutralized and thereby caused to deposit on the anode plate of the cell.

Abstract: The invention relates to a chemical etching composition and to methods to produce a photovoltaic cell with transparent regions. The methods comprise a step to locally dispense an etching composition on the photovoltaic cell in a pattern, or adjacent to the edge thereof; an optional step to apply heat to the cell; and a step to remove the etching composition. The methods are further characterized by the chemical removal of one or more chemically distinctive layers of the photovoltaic cell where the etching composition is applied. The methods may be used to produce a thin film photovoltaic panel.

Abstract: The present invention relates to a chemical etching method for removing portions of material from the photovoltaic laminate of a thin-film photovoltaic panel. The method involves disposing a pre-determined pattern of an etching paste onto the back electrode of the photovoltaic laminate, and then removing the etching paste after a sufficient dwell time. The method removes portions of the laminate where the etching paste is applied. The method may be used to increase light transmission in thin-film photovoltaic panels for window and sun roof applications.

Abstract: The present invention relates to a chemical etching method to electrically isolate the edge from the interior of a thin-film photovoltaic panel comprising a substrate and a photovoltaic laminate. The method comprises a step to dispense an etching paste comprising two or more acids on the laminate periphery; an optional step to apply heat to the laminate; and a step to remove the etching paste. The method is further characterized by the chemical removal of at least two chemically distinctive layers of the laminate at the periphery where the etching paste is applied. The method may be used to produce a thin-film photovoltaic panel.