Abstract: Disclosed herein is a dielectric microstructure with a substantially unit dielectric constant K for use in microelectromechanical systems.

Abstract: Disclosed herein is a dielectric microstructure with a substantially unit dielectric constant K for use in microelectromechanical systems.

Abstract: A method of tilting a micromirror includes forming a substrate, a micromirror outwardly from the substrate, and at least one electrode inwardly from the micromirror. The method further includes applying, by the at least one electrode, electrostatic forces sufficient to pivot the micromirror about a pivot point. In addition, the method includes providing the at least one electrode with a sloped outer surface. The sloped outer surface has a first end and a second end. The second end is closer to the pivot point than the first end, and the first end is closer to the substrate than the second end. The method also includes providing at least a portion of the at least one electrode with material properties that at least partially contribute to the sloped profile of the sloped outer surface.

Abstract: A method of tilting a micromirror includes forming a substrate, a micromirror outwardly from the substrate, and at least one electrode inwardly from the micromirror. The method further includes applying, by the at least one electrode, electrostatic forces sufficient to pivot the micromirror about a pivot point. In addition, the method includes providing the at least one electrode with a sloped outer surface. The sloped outer surface has a first end and a second end. The second end is closer to the pivot point than the first end, and the first end is closer to the substrate than the second end. The method also includes providing at least a portion of the at least one electrode with material properties that at least partially contribute to the sloped profile of the sloped outer surface.

Abstract: A one transistor one capacitor micromirror with DRAM memory cell built around a large polysilicon-to-substrate capacitor which is not susceptible to recombination of photo-generated carriers caused by illumination in the projector. This large polysilicon-to-substrate capacitor overshadows the much smaller inherent parallel depletion capacitance which is sensitive to light. The device is further 100% shielded from exposed light by metal layers and the address node is located under the center of the micromirror mirror to obtain maximum shielding of light for the smaller, light sensitive, depletion portion of the capacitance. As a result the micromirror of this invention can adequately hold the cell charge in excess of the device load time of 300 &mgr;Sec even in extremely high brightness projector applications.

Abstract: A support pillar 426 for use with a micromechanical device, particularly a digital micromirror device, comprising a pillar material 422 supported by a substrate 400 and covered with a metal layer 406. The support pillar 426 is fabricated by depositing a layer of pillar material on a substrate 400, patterning the pillar layer to define a support pillar 426, and depositing a metal layer 406 over the support pillar 426 enclosing the support pillar. A planar surface even with the top of the pillar may be created by applying a spacer layer 432 over the pillars 426. After applying the spacer layer 432, holes 434 are patterned into the spacer layer to remove any spacer material that is covering the pillars. The spacer layer is then reflowed to fill the holes and lower the surface of the spacer layer such that the surface is coplanar with the tops of the support pillars 426.

Abstract: A one transistor one capacitor micromirror with DRAM memory cell built around a large polysilicon-to-substrate capacitor which is not susceptible to recombination of photo-generated carriers caused by illumination in the projector. This large polysilicon-to-substrate capacitor overshadows the much smaller inherent parallel depletion capacitance which is sensitive to light. The device is further 100% shielded from exposed light by metal layers and the address node is located under the center of the micromirror mirror to obtain maximum shielding of light for the smaller, light sensitive, depletion portion of the capacitance. As a result the micromirror of this invention can adequately hold the cell charge in excess of the device load time of 300 &mgr;Sec even in extremely high brightness projector applications.

Abstract: A high-yield micromirror device and fabrication method. Address electrodes (310) and a separate mirror bias/reset conductor (312) are disposed on a substrate (304). A micromirror superstructure including torsion beam support posts (116), torsion beam hinges (120), a torsion beam yoke (114), a mirror support post (326), and a mirror (102) is fabricated above, and electrically connected to, the mirror bias/reset conductor (312) such that the torsion beam yoke (114) and mirror (102) are suspended above the address electrodes (310). A dielectric layer (328) is formed over the address electrodes (310). The dielectric layer (328), coupled with the elimination of upper address electrodes used in the prior art electrically insulates the address electrodes (310) from contact with the mirror superstructure and prevents conductive debris from shorting either the mirror superstructure or mirror bias/reset conductor (312) to the address electrodes (310).

Abstract: A support pillar 426 for use with a micromechanical device, particularly a digital micromirror device, comprising a pillar material 422 supported by a substrate 400 and covered with a metal layer 406. The support pillar 426 is fabricated by depositing a layer of pillar material on a substrate 400, patterning the pillar layer to define a support pillar 426, and depositing a metal layer 406 over the support pillar 426 enclosing the support pillar. A planar surface even with the top of the pillar may be created by applying a spacer layer 432 over the pillars 426. After applying the spacer layer 432, holes 434 are patterned into the spacer layer to remove any spacer material that is covering the pillars. The spacer layer is then reflowed to fill the holes and lower the surface of the spacer layer such that the surface is coplanar with the tops of the support pillars 426.

Abstract: A support pillar 426 for use with a micromechanical device, particularly a digital micromirror device, comprising a pillar material 422 supported by a substrate 400 and covered with a metal layer 406. The support pillar 426 is fabricated by depositing a layer of pillar material on a substrate 400, patterning the pillar layer to define a support pillar 426, and depositing a metal layer 406 over the support pillar 426 enclosing the support pillar. A planar surface even with the top of the pillar may be created by applying a spacer layer 432 over the pillars 426. After applying the spacer layer 432, holes 434 are patterned into the spacer layer to remove any spacer material that is covering the pillars. The spacer layer is then reflowed to fill the holes and lower the surface of the spacer layer such that the surface is coplanar with the tops of the support pillars 426.

Abstract: It is possible to use an oriented monolayer to limit the Van der Waals forces between two elements by passivation. An oriented monolayer (34) is formed on a surface of a micromechanical device. When the surface comes in contact with another surface, the oriented monolayer decreases the Van der Waals forces to reduce the attraction between the surfaces.

Abstract: A bistable deformable mirror device (DMD) pixel architecture is disclosed, wherein the torsion hinges are placed in a layer different from the torsion beam layer. This results in pixels which can be scaled to smaller dimensions while at the same time maintaining a large fractional active area, an important consideration for bright, high-density displays such as are used in high-definition television applications.

Abstract: An improved hidden hinge digital micromirror device, and method of making the same, having hinges 424 attached to a yoke 428 which limits the rotation of the device mirror 430. In one embodiment, the mirror 430 is supported by a center support post 416 attached to two torsion hinges 424 by a landing hinge yoke 428. The ends of the torsion hinges 424 are attached to two support posts 426 which hold the hinges 424 above the substrate 400 and allow the hinges 424 to twist in a torsional fashion. The device is fabricated using two sacrificial spacer layers 404, 414 which are removed to allow the mirror 430 to rotate.

Abstract: A spatial light modulator (10) of the DMD type having increased performance parameters. A pixel mirror (30) is supported by a yoke (32), whereby electrostatic attraction forces (70, 76, 80, 82) are generated between several structures. First, between the elevated mirror (30) and an elevated address electrode (50, 52). Second, between the yoke (32) and an underlying address electrode (26, 28). The pixel (30) achieves high address torque, high latching torques, high reset forces, and greater address margins over previous generation devices. The proximity of the yoke (32) over the substrate address electrodes (26, 28) realizes large attraction forces whereby the pixel is less susceptible to address upset, requires lower reset voltages and provides higher switching speeds.

Abstract: It is possible to use an oriented monolayer to limit the Van der Waals forces between two elements by passivation. The invention disclosed here details how to do so by building the device to be passivated, cleaning the surface to be passivated, activating the surface, heating it along with the material to be used as the monolayer, exposing a vapor of the material to the surface and evacuating the excess material, leaving only the monolayer.

Abstract: It is possible to use an oriented monolayer to limit the Van der Waals forces between two elements by passivation. An oriented monolayer (34) is formed upon the landing electrode (10) of a spatial light modulator element. When the element is activated and deflects to come in contact with the landing electrode, the oriented monolayer decreases the Van der Waals forces and prevents the element from sticking to the electrode.

Abstract: The bistable deformable mirror device (DMD) used in a high-definition television (HDTV) application must be capable of supporting at least 128 grey levels, using pulse-width modulation. If the DMD is line-updated, then the minimum field time to support 128 grey levels cannot be achieved because of the time required to perform a resonant reset once each line. This disclosure shows how the DMD can be field-updated in order to achieve the minimum required field time.

Abstract: DMD projection light values for HDTV have various manufacturing requirements, including the high yield integration of the DMD superstructure on top of an underlying CMOS address circuit. The CMOS chip surface contains several processing artifacts that can lead to reduced yield for the DMD superstructure. A modified DMD architecture and process are disclosed that minimizes the yield losses caused by these CMOS artifacts while also reducing parasitic coupling of the high voltage reset pulses to the underlying CMOS address circuitry.

Abstract: An electrostatically deflectable beam spatial light modulator with the beam composed of two layers of aluminum alloy and the hinge connecting the beam to the remainder of the alloy formed in only one of the two layers; this provides a thick stiff beam and a thin compliant hinge. The alloy is on a spacer made of photoresist which in turn is on a semiconductor substrate. The substrate contains addressing circuitry in a preferred embodiment.

Abstract: Bidirectional operation of the bistable DMD is preferred over unidirectional operation because it eliminates contrast degradation caused by duty-factor effects and permits lower voltage operation. However, bidirectional addressing requires either two drain lines and two transistors per pixel or one drain line and three transistors per pixel. An addressing scheme for bidirectional operation is disclosed that requires only a single drain line and one transistor per pixel. For megapixel DMDs used for high-definition television applications, this addressing scheme dramatically lowers the transistor count, with expected improvements in chip yield and cost.