Abstract: In one embodiment of the invention, an integrated device has interface circuitry that includes a dynamic monitor that monitors the relative potential between (at least) two different power supplies to enable the device to react to over-voltage conditions such that appropriate selections can be made for which power supplies are selected for different components in the interface circuitry, such as output drivers and input receivers. The dynamic monitor enables over-voltage protection to be automatically implemented before the device has been configured, such as during the device's power-on state.

Abstract: A logic circuit is disclosed that is tolerant of logic signals with voltages different from the voltage of the logic circuit power supply. In one embodiment, the logic circuit has an inverting amplifier therein, the amplifier having at least one input and an output and is powered by the power supply. A first transistor, in responsive to the output of the amplifier, biases the input of the amplifier to assure substantially no static current flows through the amplifier when a logic-low is present on the amplifier output. A second transistor couples at least one logic input of the logic circuit to the input of the amplifier. In one embodiment, the second transistor impedes static current flow from the first transistor, through the second transistor, to the logic input. Various other embodiments of the logic circuit include a latch/flip-flop, multiplexer, and a complex logic gate.

Abstract: A logic circuit is disclosed that is tolerant of logic signals with voltages different from the voltage of the logic circuit power supply. In one embodiment, the logic circuit has an inverting amplifier therein, the amplifier having at least one input and an output and is powered by the power supply. A first transistor, in responsive to the output of the amplifier, biases the input of the amplifier to assure substantially no static current flows through the amplifier when a logic-low is present on the amplifier output. A second transistor couples at least one logic input of the logic circuit to the input of the amplifier. In one embodiment, the second transistor impedes static current flow from the first transistor, through the second transistor, to the logic input. Various other embodiments of the logic circuit include a latch/flip-flop, multiplexer, and a complex logic gate.

Abstract: In one embodiment of the invention, an address decoder for decoding a word-line address to energize a word line in a block of computer memory. Instead of relying on a distinct enable signal, a clock signal provides a reset function and an enable function to the address decoder. In one implementation, the address decoder includes negative-level-sense latches and 3-input AND gates to generate decoded address bits. Using the clock signal as one of the inputs to the AND gates ensures that all of the decoded address bits are 0 when the clock signal is low and that exactly one decoded address bit is 1 when the clock signal is high. In this way, the address decoder ensures that two or more word lines are not energized at the same time.

Abstract: In certain embodiments, the present invention is a word-line driver for an address decoder that decodes a multi-bit address to enable access to a row of circuit elements such as memory cells in a block of memory implemented in a dedicated memory device or as part of a larger device, such as an FPGA. The word-line driver has a feed-back latch for each word-line that ensures that the word-line is not energized when that word-line is not selected for access. By controlling the feed-back latch using a decoded address bit value rather than a pre-charged enable signal as do some prior-art dynamic word-line drivers, the word-line driver prevents undesirable energizing of multiple word-lines. The word-line driver can be implemented using less layout area and less power than some analogous prior-art static word-line drivers.

Abstract: An integrated circuit having a transistor device and over-voltage protection circuitry. The transistor device is implemented in a technology having a specified operating-voltage range, the transistor device having gate, drain, source, and tub nodes, and the specified operating-voltage range having a specified maximum voltage. The over-voltage protection circuitry is adapted to apply gate and tub voltages to the gate and tub nodes, respectively. If at least one channel voltage applied to at least one of the drain and source nodes exceeds the specified maximum voltage, then the over-voltage protection circuitry controls at least one of the gate voltage and the tub voltage to inhibit one or more adverse effects to the transistor device.

Abstract: An electrical system has a master circuit and an interface (I/F) circuit. The master circuit generates a master output signal. The I/F circuit receives an I/F input signal and a flag signal and generates an I/F output signal for application to a slave circuit, wherein the I/F input signal is based on the master output signal, and the interface circuit generates the L/F output signal either dependent on or independent of the I/F input signal as indicated by the flag signal.

Abstract: In one embodiment of the invention, a block of configuration memory has rows of memory cells, at least one row having a set of one or more dual-port memory cells adapted to selectively store either configuration data or local data. The configuration address line for that row is segmented such that the address line is connected to the configuration address ports of the dual-port memory cells via access control circuitry that can be programmably configured to prevent access to those memory cells via the configuration address line. The access control circuitry enables local data to be efficiently and accurately stored in the dual-port memory cells without interference from configuration readback operations during normal operation or from partial reconfiguration of the configuration memory.

Abstract: A memory sense amplifier includes an output and a complement output. The sense amplifier is configured such that a memory cell driving the bit line low enables latching of the bit line low by enabling pull-up of the complement output, and the memory cell driving the complement bit line low enables latching of the complement bit line low by enabling pull-up of the output.

Abstract: A programmable logic device (PLD) having a programmable routing structure that employs non-static memory cells, such as dynamic random access memory (DRAM) cells, to control configurable circuit elements, such as pass-transistors and/or MUXes. In a representative embodiment, each DRAM cell is connected to its corresponding configurable circuit element using a buffer adapted to stabilize the output voltage generated by the cell and offset the effect of charge leakage from the cell capacitor. In addition, refresh circuitry associated with the DRAM cell periodically restores the charge in the cell capacitor using a refresh operation that is performed in the background, without disturbing the user functions of the PLD. Advantageously, a relatively large capacitance associated with a DRAM cell makes a PLD of the invention less susceptible to soft errors than a prior-art PLD that relies on SRAM cells for configuration control of its routing structure.

Abstract: A programmable logic device (PLD) with a programmable logic core, block memory, and I/O circuitry has one or more blocks of standard-cell logic (SLBs) that are integrated into the PLD design to enable each SLB to be programmably connected to any one or more of the programmable core, the block memory, and/or the I/O circuitry. The addition of standard-cell-based functional blocks creates a PLD with increased overall logic density, a net smaller die size per function, lowered cost, and improvements to both power and performance characteristics relative to equivalent conventional PLDs, such as FPGAs.

Abstract: Systems and methods are disclosed for implementing configuration memory on a programmable logic device. For example, in accordance with one embodiment of the present invention, bi-directional buffers are implemented between sections of a column of memory. The buffers may provide buffering for data lines extending through the column of memory.

Abstract: A programmable logic device (PLD) with a programmable logic core, block memory, and I/O circuitry has one or more blocks of standard-cell logic (SLBs) that are integrated into the PLD design to enable each SLB to be programmably connected to any one or more of the programmable core, the block memory, and/or the I/O circuitry. The addition of standard-cell-based functional blocks creates a PLD with increased overall logic density, a net smaller die size per function, lowered cost, and improvements to both power and performance characteristics relative to equivalent conventional PLDs, such as FPGAs.

Abstract: Systems and methods are disclosed for implementing configuration memory on a programmable logic device. For example, in accordance with one embodiment of the present invention, bi-directional buffers are implemented between sections of a column of memory. The buffers may provide buffering for data lines extending through the column of memory.

Abstract: A programmable logic device (PLD) with a programmable logic core, block memory, and I/O circuitry has one or more blocks of standard-cell logic (SLBs) that are integrated into the PLD design to enable each SLB to be programmably connected to any one or more of the programmable core, the block memory, and/or the I/O circuitry. The addition of standard-cell-based functional blocks creates a PLD with increased overall logic density, a net smaller die size per function, lowered cost, and improvements to both power and performance characteristics relative to equivalent conventional PLDs, such as FPGAs.

Abstract: A first in, first out memory (FIFO) includes a multi-port memory array, which is accessed for read/write operations by activating a selected read or write word line. The read word line is controlled by a read shift register, and the write word line is controlled by a write shift register. In order to generate "full" and "empty" flags, the voltage state of read and write word lines are determined in "match circuits", which compare the locations of the read and write pointers. This eliminates the use of counters, and allows the shift registers and word line match circuits to be an integral part of a single-block regular structure. Furthermore, it allows the FIFO to be readily expanded to multiple numbers of words and bits per word.