Abstract: A frequency synthesizer device with a fast off-to-lock time to enable intermittent operation and achieve power savings through automatic control of its On/Off sequence. A relatively fast off-to-lock time is achieved by controlling the sequence of how various components of the synthesizer are reactivated. The voltage controlled oscillator is reactivated, at first operating at its previous operating frequency prior to being deactivated. The phase frequency detector is inhibited while its input signals, a reference signal and a feedback signal, are activated. In a channel hopping communication scheme, the phase frequency detector coarsely tunes the synthesizer to its previous operating frequency, and then jumps to its new operating frequency. Another aspect of the invention provides improved channel locking by guaranteeing that the phase of the feedback signal in a phase lock loop initially lags the phase of the reference frequency signal at the phase frequency detector.

Abstract: A non-inverting TTL buffer circuit provides an input for receiving data signals at high and low potential levels and an output for transmitting data signals in phase with the input. The base node of an emitter follower transistor element is coupled to a collector node of the input transistor circuit in an inverting coupling. The emitter node is coupled to a base node of the phase splitter transistor element for sourcing base driven current to the phase splitter transistor element in response to data signals at the input. The emitter follower provides transient "overdrive" for fast turn on of the phase splitter. A first clamp circuit between the base node of the emitter follower transistor element and the low potential power rail clamps the base node at a low potential level when the emitter follower transistor element is relatively non-conducting and establishes the input threshold voltage level.

Abstract: A TTL inverter buffer circuit is provided with a switched current that produces hysteresis in the threshold values. The current is switched on by a control circuit when the input logic is low and off when the logic is high. The control circuit receives its sense from the logic state so that when the input logic is low a high threshold is created and when the input logic is high a low threshold is created. The difference is the circuit hysteresis voltage which is dependent upon the switched current and a resistor.

Abstract: A translator-translator logic (TTL) to emitter coupled logic or current mode logic (ECL/CML) input buffer and translator circuit provides temperature compensated input and threshold signal voltage levels to a translator circuit ECL gate for improved operation of the translator circuit. A threshold clamp circuit is coupled between an on-chip band-gap bias generator and the base node of the reference transistor element of the translator circuit ECL gate. The threshold clamp circuit maintains a substantially fixed temperature compensated reference voltage or threshold voltage level at the base node of the reference transistor element, referenced to the temperature compensated current source voltage level V.sub.cs from the bias generator. An input clamp circuit also references the logic high signal voltage level V.sub.TH at the base node of the ECL gate input transistor element to V.sub.CS.

Abstract: An ECL/CML to TTL translator circuit couples the output of an ECL/CML gate to the input of a TTL gate. The ECL/CML gate operates with reference to a first power rail higher reference voltage level with transistor elements operating in the non-saturation operating region. The TTL gate operates with reference to a second power rail lower reference voltage level with transistor elements operating in the saturation operating region. The translator circuit includes a reference voltage level shifting constant current non-switching current mirror circuit coupled to the output of the ECL/CML gate. The current mirror circuit shifts the reference voltage level of the ECL/CML gate output from the higher reference voltage level to the lower reference voltage level and delivers a reference voltage level shifted output signal. An operating region translating emitter follower output buffer circuit is coupled to receive the voltage level shifted output signal and drive the input of the TTL gate in the saturation region.

Abstract: An ECL/CML to TTL translator circuit couples the output of an ECL/CML gate to the input of a TTL gate. The ECL/CML gate operates with reference to a first power rail higher reference voltage level with transistor elements operating in the non-saturation operating region. The TTL gate operates with reference to a second power rail lower reference voltage level with transistor elements operating in the saturation threshold operating region. The translator circuit includes a reference voltage level shifting constant current non-switching current mirror circuit coupled to the output of the ECL/CML gate for shifting the reference voltage level of the ECL/CML gate output from the higher reference voltage level to the lower reference voltage level. An operating region translating emitter follower output buffer circuit is coupled to receive the voltage level shifted output signal and drive the input of the TTL gate.

Abstract: Dual phase splitter transistor elements, an output phase splitter transistor element and a secondary phase splitter transistor element, are coupled in current mirror configuration in a TTL output buffer circuit. The output phase splitter transistor element is coupled to the pullup and pulldown transistor elements for controlling the respective conducting states of the pullup and pulldown transistor elements. The collector of the secondary phase splitter transistor element is coupled in a supplemental circuit which can have a variable load without direct connection to the pullup transistor element and output. A low impedance current sourcing active transistor element is coupled in emitter follower configuration at the collector node of the secondary phase splitter transistor element for supplying mirroring current through the emitter of the secondary phase splitter transistor element to reduce current hogging at the dual phase splitter transistor elements.