Patents by Inventor Lars Ivar Samuelson
Lars Ivar Samuelson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10263149Abstract: The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructure LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.Type: GrantFiled: March 20, 2015Date of Patent: April 16, 2019Assignee: QUNANO ABInventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson, Yourii Martynov, Steven L. Konsek, Peter Jesper Hanberg
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Patent number: 9947831Abstract: A light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires, a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer, and a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer. The at least one Group III-nitride pyramidal shell layer is located in an active region of the LED. The plurality of Group III-nitride nanowires are doped one of n- or p-type. The continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires. A distance from a side portion of the continuous contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of an apex of the continuous contact layer to the plurality of Group III-nitride nanowires.Type: GrantFiled: April 21, 2017Date of Patent: April 17, 2018Assignee: QUNANO ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Patent number: 9818830Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: GrantFiled: July 28, 2016Date of Patent: November 14, 2017Assignee: SOL VOLTAICS ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Publication number: 20170229613Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: ApplicationFiled: April 21, 2017Publication date: August 10, 2017Inventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Patent number: 9680039Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: GrantFiled: June 10, 2014Date of Patent: June 13, 2017Assignee: QUNANO ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Patent number: 9660136Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: GrantFiled: April 14, 2015Date of Patent: May 23, 2017Assignee: QUNANO ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Publication number: 20160336411Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: ApplicationFiled: July 28, 2016Publication date: November 17, 2016Inventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Patent number: 9419086Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: GrantFiled: March 27, 2015Date of Patent: August 16, 2016Assignee: SOL VOLTAICS ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Publication number: 20150333225Abstract: The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructure LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.Type: ApplicationFiled: March 20, 2015Publication date: November 19, 2015Inventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson, Yourii Martynov, Steven L. Konsek, Peter Jasper Hanberg
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Publication number: 20150221817Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: ApplicationFiled: April 14, 2015Publication date: August 6, 2015Inventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Patent number: 9096429Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: GrantFiled: July 3, 2014Date of Patent: August 4, 2015Assignee: QUNANO ABInventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Publication number: 20150200262Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: ApplicationFiled: March 27, 2015Publication date: July 16, 2015Inventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Patent number: 9024338Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: GrantFiled: November 7, 2013Date of Patent: May 5, 2015Assignee: QuNano ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Patent number: 9012883Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: GrantFiled: December 21, 2012Date of Patent: April 21, 2015Assignee: Sol Voltaics ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Publication number: 20150027523Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: ApplicationFiled: June 10, 2014Publication date: January 29, 2015Inventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Publication number: 20140312381Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: ApplicationFiled: July 3, 2014Publication date: October 23, 2014Inventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Patent number: 8796119Abstract: The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.Type: GrantFiled: May 3, 2013Date of Patent: August 5, 2014Assignee: Qunano ABInventors: Lars Ivar Samuelson, Patrik Svensson, Jonas Ohlsson, Truls Lowgren
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Patent number: 8790462Abstract: A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbour. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface.Type: GrantFiled: October 6, 2009Date of Patent: July 29, 2014Assignee: Qunano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Thomas M. I. Martensson
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Patent number: 8772626Abstract: A solar cell may include an electrically conducting substrate, a plurality of nanowhiskers extending from the substrate and a transparent electrode extending over free ends of the nanowhiskers and making electrical contact with them. Each nanowhisker may have a column with a diameter of nanometer dimension. The column may include a first p-doped semiconductor lengthwise segment and a second n-doped semiconductor lengthwise segment. The first and second semiconductor segments may have an interface between them, which forms a p-n junction. The nanowhiskers may be encapsulated in a transparent material.Type: GrantFiled: December 31, 2007Date of Patent: July 8, 2014Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Publication number: 20140175372Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: ApplicationFiled: December 21, 2012Publication date: June 26, 2014Applicant: SOL VOLTAICS ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson