Abstract: A method of inspecting a bonded wafer 3 arrangement comprises: directing measuring radiation through the bonded wafer arrangement 3; imaging at least a portion of the bonded wafer arrangement onto a detector 19 using the measuring radiation having traversed the bonded wafer arrangement, wherein an object side numerical aperture ? of the imaging 16, 18 is less than 0.05; and simultaneously detecting, using the detector 19, at least a portion of the measuring radiation having traversed the bonded wafer arrangement at a multitude of different spaced apart locations 23 within the field of view; wherein the detected radiation has an intensity spectrum such that an intensity of the detected radiation having wavelengths less than 700 nm is less than 10% of a total intensity of the detected radiation and an intensity of the detected radiation having wavelengths greater than 1200 nm is less than 10% of the total intensity of the detected radiation.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: A wafer inspection system comprises a camera having a field of view, an object mount configured to position at least a portion of surface 5 of an object 3 at an object plane 15 relative to the camera and within the field of view of the camera and at least one surface portion 41 carrying a multitude of retroreflectors 95 disposed at a greater ?d distance from the camera than the object plane and within the field of view of the camera.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: A wafer inspection method comprises imaging a full surface of the wafer at an imaging resolution insufficient to resolve individual microstructures which are repetitively arranged on the wafer. A mask 109 is applied to the recorded image and unmasked portions 111 of the image are further processed by averaging. The unmasked portions 111 are selected such that they include memory portions of the wafer.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: A method of manufacturing a plurality of semiconductor wafers comprising micro-inspecting at least one location within at least one micro-inspected pattern field and determining at least one parameter value representing a property of the wafer at the micro-inspected location, macro-inspecting a plurality of locations within the at least one micro-inspected pattern field and determining, for each macro-inspected location of the macro-inspected pattern field, at least one parameter value representing the property of the wafer at the macro-inspected location based on the light intensity recorded for the macro-inspected location and on the at least one parameter value representing the property of the wafer at the micro-inspected location of this pattern field.

Abstract: A method of inspecting a bonded wafer 3 arrangement comprises: directing measuring radiation through the bonded wafer arrangement 3; imaging at least a portion of the bonded wafer arrangement onto a detector 19 using the measuring radiation having traversed the bonded wafer arrangement, wherein an object side numerical aperture ? of the imaging 16, 18 is less than 0.05; and simultaneously detecting, using the detector 19, at least a portion of the measuring radiation having traversed the bonded wafer arrangement at a multitude of different spaced apart locations 23 within the field of view; wherein the detected radiation has an intensity spectrum such that an intensity of the detected radiation having wavelengths less than 700 nm is less than 10% of a total intensity of the detected radiation and an intensity of the detected radiation having wavelengths greater than 1200 nm is less than 10% of the total intensity of the detected radiation.

Abstract: A method of inspecting a semiconductor substrate having a back surface and including at least one piece of metal embedded in the substrate comprises directing measuring light towards the back surface of the substrate and detecting a portion of the measuring light received back from the substrate. The method also includes determining a distance between the piece of metal and the back surface based upon the detected measuring light received back from the substrate.

Abstract: An inspection system includes optics, an object support for mounting an object in a region of an object plane of the optics, a bright-field light source, and a dark-field light source. The inspection system also includes an image detector having a radiation sensitive substrate disposed in a region of an image plane of the optics and a beam dump.

Abstract: An inspection system includes imaging optics for imaging an object plane into an image plane. The imaging optics include an objective lens having positive optical power, a first lens group having negative optical power, and a second lens group having positive optical power. The optical elements are arranged along a common unfolded optical axis with a pupil plane of the imaging optics located between the first lens group and the second lens group.

Abstract: A method of manufacturing a plurality of semiconductor wafers comprising micro-inspecting at least one location within at least one micro-inspected pattern field and determining at least one parameter value representing a property of the wafer at the micro-inspected location, macro-inspecting a plurality of locations within the at least one micro-inspected pattern field and determining, for each macro-inspected location of the macro-inspected pattern field, at least one parameter value representing the property of the wafer at the macro-inspected location based on the light intensity recorded for the macro-inspected location and on the at least one parameter value representing the property of the wafer at the micro-inspected location of this pattern field.

Abstract: A wafer inspection system comprises a camera having a field of view, an object mount configured to position at least a portion of surface 5 of an object 3 at an object plane 15 relative to the camera and within the field of view of the camera and at least one surface portion 41 carrying a multitude of retroreflectors 95 disposed at a greater ?d distance from the camera than the object plane and within the field of view of the camera.

Abstract: A wafer inspection method comprises imaging a full surface of the wafer at an imaging resolution insufficient to resolve individual microstructures which are repetitively arranged on the wafer. A mask 109 is applied to the recorded image and unmasked portions 111 of the image are further processed by averaging. The unmasked portions 111 are selected such that they include memory portions of the wafer.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: An inspection system includes optics, an object support for mounting an object in a region of an object plane of the optics, a bright-field light source, and a dark-field light source. The inspection system also includes an image detector having a radiation sensitive substrate disposed in a region of an image plane of the optics and a beam dump.

Abstract: A method of inspecting a semiconductor substrate having a back surface and including at least one piece of metal embedded in the substrate comprises directing measuring light towards the back surface of the substrate and detecting a portion of the measuring light received back from the substrate. The method also includes determining a distance between the piece of metal and the back surface based upon the detected measuring light received back from the substrate.

Abstract: Ion sources, systems and methods are disclosed.