Patents by Inventor Laurin Dumas

Laurin Dumas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Implementation of a metal barrier in an integrated electronic circuit
    Patent number: 8053871
    Abstract: A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: November 8, 2011
    Assignee: STMicroelectronics S.A.
    Inventors: Pierre Caubet, Laurin Dumas, Cecile Jenny
  • IMPLEMENTATION OF A METAL BARRIER IN AN INTEGRATED ELECTRONIC CIRCUIT
    Publication number: 20100155950
    Abstract: A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.
    Type: Application
    Filed: August 7, 2009
    Publication date: June 24, 2010
    Applicant: STMicroelectronics S.A.
    Inventors: Laurin Dumas, Cécile Jenny, Pierre Caubet
  • Implementation of a metal barrier in an integrated electronic circuit
    Patent number: 7601636
    Abstract: A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: October 13, 2009
    Assignee: STMicroelectronics S.A.
    Inventors: Laurin Dumas, Cécile Jenny, Pierre Caubet
  • IMPLEMENTATION OF A METAL BARRIER IN AN INTEGRATED ELECTRONIC CIRCUIT
    Publication number: 20080088022
    Abstract: A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved.
    Type: Application
    Filed: October 12, 2007
    Publication date: April 17, 2008
    Applicant: STMicroelectronics S.A.
    Inventors: Laurin Dumas, Cecile Jenny, Pierre Caubet