Abstract: A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator wafer (UTSOI) is disclosed. The UTSOI wafer includes a mechanical substrate, an insulator layer, and a seed layer. At least one dopant is applied to the semiconductor substrate. A first portion of an epitaxial layer is grown on the seed layer. A predefined concentration of carbon impurities is introduced into the first portion of the epitaxial layer. A remaining portion of the epitaxial layer is grown. During the epitaxial growth process, the at least one dopant diffuses into the epitaxial layer such that, at completion of the growing of the epitaxial layer, there exists a net dopant concentration profile which has an initial maximum value at an interface between the seed layer and the insulator layer and which decreases monotonically with increasing distance from the interface within at least a portion of at least one of the semiconductor substrate and the epitaxial layer.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator wafer (UTSOI) is disclosed. The UTSOI wafer includes a mechanical substrate, an insulator layer, and a seed layer. At least one dopant is applied to the semiconductor substrate. A first portion of an epitaxial layer is grown on the seed layer. A predefined concentration of carbon impurities is introduced into the first portion of the epitaxial layer. A remaining portion of the epitaxial layer is grown. During the epitaxial growth process, the at least one dopant diffuses into the epitaxial layer such that, at completion of the growing of the epitaxial layer, there exists a net dopant concentration profile which has an initial maximum value at an interface between the seed layer and the insulator layer and which decreases monotonically with increasing distance from the interface within at least a portion of at least one of the semiconductor substrate and the epitaxial layer.

Abstract: An integrated circuit system includes a substrate of an electrical insulating material having a surface. Mounted on the surface of the substrate is an IC, a semiconductor piece having therein a circuit, such as a microprocessor, having a plurality of functional blocks. Also mounted on the substrate are a plurality of power supply chips. Each of the power supply chips is connected through conductors and vias in the substrate to a separate functional block on the IC semiconductor piece. Each of the power supply chips forms part of a circuit, such as a DC-DC converter, which is capable of reducing a voltage supplied thereto to a lower voltage suitable for the particular functional block to which the particular power supply chip is connected. Thus, a single relatively large voltage fed to the power supply chips through conductors on the substrate is reduced by each power supply chip to a lower voltage suitable for the particular functional block of the IC semiconductor piece.

Abstract: An integrated circuit system includes a substrate of an electrical insulating material having a surface. Mounted on the surface of the substrate is an IC, a semiconductor piece having therein a circuit, such as a microprocessor, having a plurality of functional blocks. Also mounted on the substrate are a plurality of power supply chips. Each of the power supply chips is connected through conductors and vias in the substrate to a separate functional block on the IC semiconductor piece. Each of the power supply chips forms part of a circuit, such as a DC-DC converter, which is capable of reducing a voltage supplied thereto to a lower voltage suitable for the particular functional block to which the particular power supply chip is connected. Thus, a single relatively large voltage fed to the power supply chips through conductors on the substrate is reduced by each power supply chip to a lower voltage suitable for the particular functional block of the IC semiconductor piece.

Abstract: A method of making a liquid crystal display which has a layer of polysilicon on a surface of a substrate, a gate of a conductive material over and insulated from a portion of the polysilicon layer, a layer of an insulating material over the gate, and a metal layer on the insulating layer. The method includes forming a layer of an insulating material over the metal layer and then subjecting the device to a plasma containing hydrogen to diffuse the hydrogen through the insulating layers and the metal layer into the polysilicon layer.

Abstract: A power supply integrated module includes a metal substrate having a surface and a body of a dielectric material, such as a glass or ceramic, mounted on and bonded to the surface of the substrate. The body is formed of a plurality of layers of the dielectric material bonded together. Areas of a conductive material and a resistive material are coated on the surfaces of the layers of the body to form passive electronic components, such as capacitors, resistors and inductors. At least one transformer is on or in the body. The transformer and passive electronic components are electrically connected by conductive interconnects on the layers of the body and vias of a conductive material extending through the layers of the body to form a power supply integrated circuit. Active electronic components, such as diodes and transistors, may also be mounted on the body and electrically connected in the power supply circuit.

Abstract: Liquid crystal mixtures of liquid crystalline esters, biphenyls and terphenyls have wide useful temperature ranges, fast response times and a small index of refraction anisotropy which can be employed in liquid crystal cells having improved viewing angles.

Abstract: A field-effect transistor, made with liquid crystal material, is connected to each liquid crystal cell in a liquid crystal matrix display device. The transistors with the display, all made with liquid crystal material, are integrally constructed in one device.

Abstract: The device comprises an enclosure including two spaced apart electrodes for applying an electric field through a film of liquid crystal material between the electrodes. Disposed on one of the electrodes, between it and the liquid crystal film, is a semiconductor material layer. The semiconductor layer has a rectifying or non-ohmic contact with the liquid crystal film, and has an ohmic or low resistance contact with the electrode. The layer has a resistance, when the rectifying contact is reverse biased, greater than that of the liquid crystal film, and, when the rectifying contact is forward biased, less than that of the film.

Abstract: A D.C. glow discharge is applied to a heated glass substrate coated with a conductive layer in the form of a pattern in an evacuated chamber, to which chamber certain amounts of oxygen and a volatile tin composition have been added. A glass substrate is produced which is coated with a patterned, transparent, conductive coating of tin oxide, wherein the surface region of the glass has been depleted of alkali metal ions.