Abstract: A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.

Abstract: A microwave plasma deposition source including a vacuum chamber for containing a substance to be energized in a plasma with microwave energy, a coaxial microwave feed ending in the chamber, a sputter target in the chamber and electrically isolated from the coaxial feed, and a second substrate spaced from the sputter target for defining a plasma volume between the substrates.

Abstract: A process for depositing on a sample surface a smooth, wear-resistant coating including the steps of providing a vacuum processing chamber for holding the sample to be coated, introducing into the processing chamber coating-forming reactants for deposition on the sample surface, and supplying to the processing chamber a plasma stream with an electron temperature of up to 10 eV, a directed ion energy of 5 to 50 eV, and an ion flux at the sample in the range of 0.1 to 100 milliamps per square centimeter for transferring energy to the deposited material to form the smooth coating.