Patents by Inventor Lawrence John Overzet

Lawrence John Overzet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Atmospheric pressure plasma apparatus
    Patent number: 8110990
    Abstract: Disclosed is an atmospheric pressure plasma apparatus for enhancing and or controlling the dissociation of a secondary gas by converting a source gas into a plasma state at atmospheric pressure and controlling the interaction between that plasma and the secondary gas using porous metal, and ceramic tubes to create a path having controllable isolation from the region where plasma is generated.
    Type: Grant
    Filed: December 9, 2008
    Date of Patent: February 7, 2012
    Assignees: Korea Institute of Industrial Technology, Board of Regents, The University of Texas System
    Inventors: Bum Ho Choi, Jong Ho Lee, Jung Chan Bae, Yong-Seok Park, Chun-Seong Park, Woo Sam Kim, Gil Sik Lee, Lawrence John Overzet, Byeong Jun Lee
  • Deep anisotropic silicon etch method
    Patent number: 8012365
    Abstract: A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from ?40° C. to ?120° C., comprising alternated and repeated steps of: etching with injection of a fluorinated gas, into the plasma reactor, and passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: September 6, 2011
    Assignee: STMicroelectronics, SA
    Inventors: Remi Dussart, Philippe Lefaucheux, Xavier Mellhaoui, Lawrence John Overzet, Pierre Ranson, Thomas Tillocher, Mohamed Boufnichel
  • Atmospheric pressure plasma apparatus
    Publication number: 20100033096
    Abstract: Disclosed is an atmospheric pressure plasma apparatus for enhancing and or controlling the dissociation of a secondary gas by converting a source gas into a plasma state at atmospheric pressure and controlling the interaction between that plasma and the secondary gas using porous metal, and ceramic tubes to create a path having controllable isolation from the region where plasma is generated.
    Type: Application
    Filed: December 9, 2008
    Publication date: February 11, 2010
    Applicants: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY, BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Bum Ho Choi, Jong Ho Lee, Jung Chan Bae, Yong-Seok Park, Chun-Seong Park, Woo Sam Kim, Gil Sik Lee, Lawrence John Overzet, Byeong Jun Lee
  • Deep anisotropic silicon etch method
    Publication number: 20080293250
    Abstract: A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from ?40° C. to ?120° C., comprising alternated and repeated steps of: etching with injection of a fluorinated gas, into the plasma reactor, and passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.
    Type: Application
    Filed: April 3, 2008
    Publication date: November 27, 2008
    Inventors: Remi Dussart, Philippe Lefaucheux, Xavier Mellihaoui, Lawrence John Overzet, Pierre Ranson, Thomas Tillocher, Mohamed Boufnichel