Abstract: An X-ray image capture radiation detector for use in digital radiography is disclosed. The radiation detector has, in order, a dielectric substrate, a TFT transistor and a capacitor on the surface of the dielectric substrate, an insulating layer, a photoconductive layer over the insulating layer, a top dielectric layer, and a top conducting layer. The insulating layer prevents any direct charge transfer between the photoconductive layer and the capacitor.

Abstract: An image capture panel includes a plurality of sensors arrayed adjacent to a substrate layer of dielectric material, and a radiation sensitive layer disposed over the sensors. The radiation sensitive layer is exposed to a first substantially uniform pattern of light radiation for partially neutralizing residual electrical charges trapped within the image capture panel. The radiation sensitive layer is then exposed to a second substantially uniform pattern of light radiation sufficient to neutralize substantially all residual electrical charges trapped within the image capture panel.

Abstract: An X-ray image capture element includes a dielectric substrate layer having a top surface and a bottom surface. A plurality of transistors is arrayed adjacent the top surface of the dielectric layer. A plurality of charge storage capacitors is also arrayed adjacent the top surface of the dielectric layer, each capacitor having a conductive inner microplate connected to at least one of the transistors. Conductive address lines and sense lines are disposed adjacent the top surface of the dielectric layer for electronically activating the transistors and individually accessing each of the capacitors. A photoconductive layer is disposed over the transistors, address and sense lines, and a top conducting layer is disposed over the photoconductive layer opposite the dielectric layer.