Abstract: A removable passive airflow oscillation device can be disposed within a pressurized wing structure utilized as a plenum. The passive airflow oscillation device can be a removable insert disposed into exterior vehicle surfaces with pressurization of a sealed chamber to provide the airflow. The device can include a cavity configured to receive the airflow from an ingress opening, direct the airflow therethrough to generate a predetermined oscillating airflow, and expel the oscillatory airflow from the egress opening. The removable passive airflow oscillation devices can provide quick and simple replacement and maintenance of damaged or clogged devices. The aft chamber of the flap seal can be sealed and pressurized to serve as a plenum providing the airflow to the actuators. The device can receive airflow, such as compressor air, and expel an oscillating airflow. Because each device is self-contained the number of devices and location thereof can vary by application.

Abstract: A thin-film photovoltaic device includes: a substrate for supporting the thin-film photovoltaic device; a back contact layer disposed on the substrate; a p-type solar absorber layer disposed on the back contact layer, the p-type solar absorber layer including one of a Group IB-IIIA-VIA.sub.2 material and a IIB-VIA material; an n-type solar absorber layer disposed on and in contact with the p-type solar absorber layer, the n-type solar absorber layer including one of a Group IA-IVA-VIIA.sub.3 material, a Group IA.sub.2.-IVA-VIIA.sub.6, and a Group I.sub.2.-I-IIIA-VIIA.sub.6 material; and a semi-transparent top contact layer disposed on the n-type solar absorber layer.

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract: A system for manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A method for depositing one or more thin-film layers on a flexible polyimide substrate having opposing front and back outer surfaces includes the following steps: (a) heating the flexible polyimide substrate such that a temperature of the front outer surface of the flexible polyimide substrate is higher than a temperature of the back outer surface of the flexible polyimide substrate, and (b) depositing the one or more thin-film layers on the front outer surface of the flexible polyimide substrate. A deposition zone for executing the method includes (a) one of more physical vapor deposition sources adapted to deposit one or more metallic materials on the front outer surface of the substrate, and (b) one or more radiant zone boundary heaters.

Abstract: A method of manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract: A photovoltaic element includes a polymer substrate having opposing device and back sides, and having a coefficient of thermal expansion of at least 4 parts per million per degree Celsius but not exceeding 12 parts per million per degree Celsius. A metal structure is disposed on the device side of the polymer substrate, and the metal structure includes (a) a transition-metal-based layer disposed on the polymer substrate, (b) an aluminum-based barrier layer disposed on the transition-metal-based layer, and (c) a molybdenum-based cap layer disposed on the aluminum-based barrier layer. A CIGS photovoltaic structure is disposed on the molybdenum-based cap layer.

Abstract: A thin-film photovoltaic device includes a semi-transparent back contact layer. The semi-transparent back contact layer includes a semi-transparent contact layer, a defect interface layer, and a semi-transparent contact interface layer. The thin-film photovoltaic device may be formed in a substrate or superstrate configuration. A tandem thin-film photovoltaic device includes a semi-transparent interconnect layer. The semi-transparent interconnect layer includes a semi-transparent contact layer, a defect interface layer, and a semi-transparent contact interface layer.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract: A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a I-III-VI absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III-V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack.

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract: A method for depositing one or more thin-film layers on a flexible polyimide substrate having opposing front and back outer surfaces includes the following steps: (a) heating the flexible polyimide substrate such that a temperature of the front outer surface of the flexible polyimide substrate is higher than a temperature of the back outer surface of the flexible polyimide substrate, and (b) depositing the one or more thin-film layers on the front outer surface of the flexible polyimide substrate. A deposition zone for executing the method includes (a) one of more physical vapor deposition sources adapted to deposit one or more metallic materials on the front outer surface of the substrate, and (b) one or more radiant zone boundary heaters.

Abstract: A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.

Abstract: A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.