Abstract: An example of a system includes a plurality of non-volatile memory dies, a memory bus coupled to the plurality of non-volatile memory dies, and one or more control circuits coupled to the plurality of non-volatile memory dies through the memory bus. The one or more control circuits include a plurality of die-specific request queues configured in a one-to-one correspondence with the plurality of non-volatile memory dies. The one or more control circuits are configured to add die-specific atomic requests to individual die-specific request queues of the plurality of die-specific request queues independently of each other in response to die-specific triggering events.

Abstract: An example of a system includes a plurality of non-volatile memory dies, a memory bus coupled to the plurality of non-volatile memory dies, and one or more control circuits coupled to the plurality of non-volatile memory dies through the memory bus. The one or more control circuits include a plurality of die-specific request queues configured in a one-to-one correspondence with the plurality of non-volatile memory dies. The one or more control circuits are configured to add die-specific atomic requests to individual die-specific request queues of the plurality of die-specific request queues independently of each other in response to die-specific triggering events.

Abstract: A method of managing a memory bus includes identifying sub-operations required for execution of commands, maintaining a list of released sub-operations containing only released unexecuted sub-operations directed to individual dies that are identified as available, accessing the dies until the list is empty, subsequently, polling to identify dies that are available, and subsequently resuming accessing the dies by executing only sub-operations from the list until the list is empty.

Abstract: A method of managing a memory bus includes identifying sub-operations required for execution of commands, maintaining a list of released sub-operations containing only released unexecuted sub-operations directed to individual dies that are identified as available, accessing the dies until the list is empty, subsequently, polling to identify dies that are available, and subsequently resuming accessing the dies by executing only sub-operations from the list until the list is empty.

Abstract: Systems, methods, and apparatuses are provided to obtain diagnostic information from a storage device. A read command may be transmitted to a storage device, where the read command conforms to a block level storage protocol and is directed to an unused logical unit of storage memory included in the storage device, to an invalid logical block address, and/or to a mode page. The unused logical unit may be a predetermined logical unit of the storage memory that is not allocated by a file system. Diagnostic data may be received from the storage device in response to the read command. The diagnostic data may be information related to operation of the storage device and/or a component of the storage device.

Abstract: Systems, methods, and apparatuses are provided to obtain diagnostic information from a storage device. A read command may be transmitted to a storage device, where the read command conforms to a block level storage protocol and is directed to an unused logical unit of storage memory included in the storage device, to an invalid logical block address, and/or to a mode page. The unused logical unit may be a predetermined logical unit of the storage memory that is not allocated by a file system. Diagnostic data may be received from the storage device in response to the read command. The diagnostic data may be information related to operation of the storage device and/or a component of the storage device.

Abstract: In a nonvolatile memory array, such as a three-dimensional array of charge-storage memory cells, data is randomized so that data of different strings along the same bit line are randomized using different keys and portions of data along neighboring word lines are randomized using different keys. Keys may be rotated so that data of a particular word line is randomized according to different keys in different strings.

Abstract: In a nonvolatile memory array, such as a three-dimensional array of charge-storage memory cells, data is randomized so that data of different strings along the same bit line are randomized using different keys and portions of data along neighboring word lines are randomized using different keys. Keys may be rotated so that data of a particular word line is randomized according to different keys in different strings.

Abstract: When reading a memory cell on a NAND string, the word lines for the memory cells not being read will receive a voltage so that those memory cells operate as pass gates. Over time, if there are a lot of read operations without any program operations, the cells not being read may suffer from Read Disturb because the voltage applied to the word lines may cause electrons to accumulate in the floating gates of the non-selected cells. The accumulation of charge in the floating gates raises the threshold voltage. To avoid the limitations of Read Disturb, only one word line of a block (or other grouping) is used to program and read data. In a system using NAND flash memory, the word line being read is not typically subjected to read disturb. Thus, a NAND flash memory that restricts programming and reading to one word line of a block is not likely to exhibit read disturb in that block.