Abstract: The present invention is related to a method for reducing the metal contamination on a surface of a semiconductor substrate wherein said substrate is submitted to a wet cleaning or rinsing process in a solution capable of oxidising said surface and containing a substance strongly dissociating in said solution whereby creating an amount of ions of at least one species in said solution, at least one of the ion species being such that the ions of the species are binding to the oxidised surface in such a way that said amount of ions is substantially reducing the amount of metal ions bound to the oxidised surface. Wet treatments such as rinsing, cleaning, in wet benches, batches and single wafer wet-cleaning equipment and single or double-side cleaning or etching applications can use the method of the present invention.

Abstract: A processing apparatus and method utilizing a single process chamber to deposit a layer of doped or undoped silicon dioxide utilizing a silicon source and a dopant gas and a remote plasma from an oxygen source and a source of additional ultraviolet light.