Abstract: In a method of an apparatus for forming a conductive layer on a substrate wafer by evaporative, sputtering or other similar processes performed under a controlled environment, there are provided means for holding the wafer at the edge portions thereof with minimal holding contact, means orbiting rotating the wafer about a first axis which forms an acute angle relative to the major surfaces of the wafer while the processes for forming the layer is in progress so that the layer is formed uniformly, and means orbiting the wafer about a second axis which is substantially orthogonal to said first axis.