Abstract: The present invention relates to use of an anti-PCSK9 antibody and/or antibody fragment thereof and a pharmaceutical preparation comprising the same in a method for preventing or treating a cholesterol-related disease. Furthermore, the present invention relates to an anti-PCSK9 antibody or a liquid preparation thereof for preventing or treating the above disease.

Abstract: A quantum dot alloy nanomaterial, a preparation method therefor, and a semiconductor device. The quantum dot alloy nanomaterial comprises N alloy nanostructured units arranged in sequence in a radial direction, wherein N is larger than or equal to 2. The alloy nanostructured units comprise type A1 and type A2. Type A1 or type A2 is a gradient alloy component structure in which energy level width increases or decreases from inside out in the radial direction, respectively. In quantum dot alloy nanomaterial, alloy nanostructured units of type A1 and type A2 are alternately distributed, and the energy levels of adjacent alloy nanostructured units are continuous. The quantum dot alloy nanomaterial not only achieves higher luminous efficiency, but satisfies comprehensive performance requirements of a QLED device and a corresponding display technology for quantum dot alloy nanomaterial, and is an ideal material applicable to QLED and display technology.

Abstract: The present invention provides a video switching method based on multi-channel decoding and comprising: starting the intelligent device to accomplish an initialization operation of a system file; closing the display of an image layer, decoding and displaying an obtained boot video on the video layer; after a system desktop launcher is started, displaying a main interface on the image layer in a transparent form; after a system is started, the intelligent device creates and displays a display layer on the image layer, wherein a display area of the display layer is smaller than that of the image layer; and decoding and displaying remotely obtained video data on the display layer. The invention avoids the issue of waiting for the loading of the video data of the online video for playing after the boot video ends, resulting in a relatively long waiting time and lowering the user experience.

Abstract: An apparatus for preparing graphene by means of laser irradiation in liquid, comprising a laser generating system, and further comprising a computer control system, a cleaning and drying system, and a workpiece auxiliary system. The light spot diameter of the laser emitted from a pulse laser unit (26) is increased by means of a beam expander (24), and the laser is reflected and split by a beam splitter to form two laser beams; a first laser beam (19) shocks the right vertical plane of a graphite solid target (18) by means of a focusing lens, and a second laser beam (17) shocks the left vertical plane of the graphite solid target (18) by means of the focusing lens, so as to grow graphene on a copper foil (5) substrate.

Abstract: The present application discloses a first aspect provides a quantum dot light-emitting diode, including: a cathode and an anode which are oppositely arranged; a quantum dot light-emitting layer arranged between the cathode and the anode; and a stacked layer arranged between the cathode and the quantum dot light-emitting layer. A stacked layer includes: a first metal oxide nanoparticle layer, and a mixed material layer arranged on a surface of the first metal oxide nanoparticle layer far away from the quantum dot light-emitting layer. The mixed material layer includes: first metal oxide nanoparticles, and a second metal oxide dispersed among gaps of the first metal oxide nanoparticles. First metal oxide nanoparticles in the first metal oxide nanoparticle layer serve as an electron transport material. A content of the second metal oxide in the mixed material layer gradually increases in a direction from the quantum dot light-emitting layer to the cathode.

Abstract: A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The QD composite material includes a type A3 QD structural unit and a type A4 QD structural unit. The type A3 QD structural units has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A4 QD structural unit has a homogeneous alloy composition structure. An inner part of the QD composite material includes one or more QD structural units having a gradient alloy composition structure, and energy levels in adjacent QD structural units having gradient alloy composition structures are continuous. The QD composite material includes one or more QD structural units having a homogeneous alloy composition structure in a region close to the surface.

Abstract: A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The at least two structural units include a type A1 structural unit and a type A2 structural unit. The type A1 QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A2 QD structural unit has a gradient alloy composition structure with the energy level width decreasing along the radial direction toward the surface. The two types of QD structural units are arranged alternately along the radial direction, and the energy levels in adjacent QD structural units having gradient alloy composition structures are continuous.

Abstract: A quantum dot (QD) composite material includes at least three QD structural units arranged sequentially along a radial direction. Among the at least three QD structural units, each QD structural unit at a center of the QD composite material and each QD structural unit at a surface of the QD composite material have a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface, along the radial direction, energy levels of adjacent gradient alloy composition structures of the QD structure units are continuous. A QD structural unit located between the QD structural units at the center and the QD structural units at the surface have a homogeneous alloy composition structure.

Abstract: The invention provides an intelligent device and a method for controlling a boot screen of the intelligent device, applicable to the intelligent device supporting video hardware decompression. The method for controlling the boot screen of the intelligent device specifically comprises steps of: completing hardware initialization operation by the intelligent device, and storing a preset image in the first storage area, thereby enabling the image layer to display the preset image; starting a system kernel which controls the video driver module, and starting the video layer through the video driver module; reading the corresponding preset image in the first storage area, converting the preset image into video data, and writing the video data into the second storage area, thereby enabling the video layer to display the video data; and starting an application access to the system.

Abstract: The present invention provides a quantum dot (QD) composite material, a preparation method, and a semiconductor device. The method includes synthesizing a first compound at a predetermined position, synthesizing a second compound on the surface of the first compound, the second compound and the first compound having a same alloy composition or having different alloy compositions, and forming the QD composite material through a cation exchange reaction between the first compound and the second compound. The light-emission peak wavelength of the QD composite material experiences one or more of a blue-shift, a red-shift, and no-shift. The method uses the QD successive ionic layer adsorption and reaction (SILAR) synthesis method to precisely control layer-by-layer QD growth and the QD one-step synthesis method to form a composition-gradient transition shell.

Abstract: A quantum dot light-emitting diode and a method for fabricating the same. The quantum dot light-emitting diode, includes: an anode, a cathode, and a quantum dot light-emitting layer arranged between the anode and the cathode. A composite electron transport layer is arranged between the cathode and the quantum dot light-emitting layer, and the composite electron transport layer contains an electron transport material and an ultraviolet absorbing material.

Abstract: The present invention provides a video switching method based on multi-channel decoding and comprising: starting the intelligent device to accomplish an initialization operation of a system file; closing the display of an image layer, decoding and displaying an obtained boot video on the video layer; after a system desktop launcher is started, displaying a main interface on the image layer in a transparent form; after a system is started, the intelligent device creates and displays a display layer on the image layer, wherein a display area of the display layer is smaller than that of the image layer; and decoding and displaying remotely obtained video data on the display layer. The invention avoids the issue of waiting for the loading of the video data of the online video for playing after the boot video ends, resulting in a relatively long waiting time and lowering the user experience.

Abstract: The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes a number of N QD structural units arranged sequentially along a radial direction of the QD material, where N?1. Each QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface of the QD material. Moreover, the energy level widths of adjacent QD structural units are continuous. The present invention provides a QD material having a gradient alloy composition along the radial direction from the center to the surface. The disclosed QD material not only achieves higher QD light-emitting efficiency, but also meets the comprehensive requirements of semiconductor devices and corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

Abstract: The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes at least one QD structural unit arranged sequentially along a radial direction of the QD material. Each QD structural unit has a gradient alloy composition structure with a changing energy level width along the radial direction or a homogeneous alloy composition structure with a constant energy level width along the radial direction. The disclosed QD material not only achieves higher light-emission efficiency of QD material, but also meets the comprehensive requirements of semiconductor devices and the corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

Abstract: A glucose sensor electrode, a preparation method therefor and the use thereof are provided for the rapid and sensitive detection of glucose. The method involves: (1) performing an alkali heat treatment to form a nanoneedle-structured titanium dioxide on the surface of a titanium electrode; (2) forming micro-region grooves on a nanoneedle-structured titanium dioxide film layer to obtain a nanoneedle-structured titanium dioxide having a micropattern; (3) depositing a chlorine-doped polypyrrole in the grooves by using chronopotentiometry; (4) forming a nanocone-structured citric-acid-doped polypyrrole on the chlorine-doped polypyrrole by using chronopotentiometry; and (5) grafting an enzyme capable of detecting glucose to obtain the glucose sensor electrode. This simple and stable process is low in cost, efficiently grafts the enzyme capable of detecting glucose on the surface of the electrode, provides a stable electrode with higher reliability for detecting glucose.

Abstract: An integrated light-emitting device and a fabricating method thereof. The integrated light-emitting device includes a first electrode, an insulating layer, a second electrode, a light-emitting layer, and a third electrode which are sequentially laminated; the first electrode, the insulating layer, the second electrode, and the third electrode together constitute a field effect transistor unit, and the first electrode, the second electrode and the third electrode are respectively a gate, a source and a drain of the field effect transistor unit, and a surface of the insulating layer adjacent to the second electrode is provided with a nano-pit array structure configured for condensing light; and the second electrode, the light-emitting layer and the third electrode together constitute a light-emitting unit, the light-emitting unit configured to emit light toward the first electrode along the second electrode.

Abstract: Disclosed in the present disclosure is a preconfigured reverse drive method applied in a video displaying process. The method comprises the steps of: pre-obtaining display content of several frames behind lit pixels in a video by means of content loading; and adding a reverse drive signal before each forward drive signal used for driving the display content of the several frames, to suppress electric charge concentration on pixel in a video display panel in advance. The reverse drive signal changes the potential barrier of the detect potential well, removes electric charges confined and concentrated in the potential well, and reduces the density of confined electric charges. Thus, the video display brightness is improved, and the service life of the video display panel is prolonged.

Abstract: The present disclosure discloses a quantum dot light-emitting diode and a preparation method therefor, wherein the quantum dot light-emitting diode comprises an anode, a cathode, and a quantum dot light-emitting layer disposed between the anode and the cathode, further includes a first modified layer disposed between the anode and the quantum dot light-emitting layer, comprising PAMAM having transition metal cation doped. The present disclosure, by disposing the first modified layer between the anode and the quantum dot light-emitting layer to modify the anode, is able to increase work function of anode, thereby improving hole injection effect and performance of a device. The present disclosure, by disposing a second modified layer between the cathode and the quantum dot light-emitting layer to modify the cathode and reduce the work function of the cathode, thereby improves electron injection effect and performance of the device.

Abstract: A television board card, a television system and a television system configuration method are disclosed. The television board card includes a storage unit configured to store a configuration file, the configuration file comprising a country code form in which a plurality of country codes are preconfigured and system configuration information corresponding to each of the plurality of country codes. The television board card further includes a receiving unit configured to receive a configuration command, and a processing unit configured to analyze the configuration file and select the corresponding system configuration information for configuration according to the configuration command.

Abstract: A quantum dot and its preparation method and application. The method includes the steps of forming a compound quantum dot core first, then adding a precursor of a metal element M2 to be alloyed into the reaction system containing the compound quantum dot core. The metal element M2 undergoes cation exchange with a metal element M1 in the existing compound quantum dot core, thereby forming a quantum dot with an alloy core. In this method, the distribution of alloyed components is not only adjusted by changing the feeding ratio of the metal elements and the non-metal elements, but also by a more real-time, more direct, and more precise adjustments through various reaction condition parameters of the actual reaction process, thereby achieving a more precise composition and energy level distribution control for alloyed quantum dots.