Patents by Inventor Leigh-Trevor Canham
Leigh-Trevor Canham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9745199Abstract: A method of making mesoporous silicon from silica, the mesoporous silicon obtained by the method, and uses of the mesoporous silicon are described. The mesoporous silicon may be derived from plants, particularly land-based plants.Type: GrantFiled: February 27, 2012Date of Patent: August 29, 2017Assignee: PSIMEDICA LIMITEDInventors: Leigh Trevor Canham, Armando Loni
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Patent number: 9540246Abstract: A method of making porous silicon using a chemical etchant comprising metal ions is described.Type: GrantFiled: December 16, 2010Date of Patent: January 10, 2017Assignee: PSIMEDICA LIMITEDInventors: Leigh Trevor Canham, Armando Loni
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Patent number: 8940278Abstract: Oral hygiene compositions suitable for use as dentifrice compositions comprising a silicon abrasive agent are provided.Type: GrantFiled: April 21, 2006Date of Patent: January 27, 2015Assignee: Intrinsiq Materials Global LimitedInventor: Leigh Trevor Canham
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Publication number: 20140079930Abstract: A method of making mesoporous silicon from silica, the mesoporous silicon obtained by the method, and uses of the mesoporous silicon are described. The mesoporous silicon may be derived from plants, particularly land-based plants.Type: ApplicationFiled: February 27, 2012Publication date: March 20, 2014Applicant: PSIMEDICA LIMITEDInventors: Leigh Trevor Canham, Armando Loni
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Publication number: 20130034714Abstract: A method of making porous silicon using a chemical etchant comprising metal ions is described.Type: ApplicationFiled: December 16, 2010Publication date: February 7, 2013Inventors: Leigh Trevor Canham, Armando Loni
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Publication number: 20110311633Abstract: The invention relates to the use of a silicon-containing material to reduce the amount of hormone required in a method of hormone treatment to achieve a desired response, particularly in hormone replacement therapy (HRT) and especially in the maintenance of post-menopausal bone health and the management or treatment of osteoporosis, and to pharmaceutical compositions for use in such a method.Type: ApplicationFiled: March 3, 2006Publication date: December 22, 2011Inventors: Leigh Trevor Canham, Jonathan Joseph Powell, Ravin Jugdaohsingh
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Publication number: 20110268779Abstract: A chewing gum composition comprising porous silicon is described.Type: ApplicationFiled: November 19, 2009Publication date: November 3, 2011Inventor: Leigh Trevor Canham
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Publication number: 20090297441Abstract: The use of silicon as an imaging agent is described.Type: ApplicationFiled: September 22, 2006Publication date: December 3, 2009Inventors: Leigh Trevor Canham, Anna Agnieszka Kluczewska, Jerome Paul Barley, Raphaela Fortes Drummond Chicarino Varajao
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Publication number: 20090214451Abstract: Oral hygiene compositions suitable for use as dentifrice compositions comprising a silicon abrasive agent are provided.Type: ApplicationFiled: April 21, 2006Publication date: August 27, 2009Applicant: INTRINSIQ MATERIALS GLOBAL LIMITEDInventor: Leigh Trevor Canham
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Publication number: 20090175985Abstract: The invention relates to the use of silicon in food.Type: ApplicationFiled: July 27, 2006Publication date: July 9, 2009Inventor: Leigh Trevor Canham
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Publication number: 20090041908Abstract: The present invention relates to a method of packaging a packageable product comprising the step of placing the packageable product and a silicon material within a package. The packageable product may be a food or a drink. The silicon material may comprise porous silicon, for example it may comprise films or particles of vivid colour. The silicon material may be used to absorb substances that are harmful to the packageable product. The silicon material may be used to release substances that are beneficial to the packageable product.Type: ApplicationFiled: July 27, 2006Publication date: February 12, 2009Inventor: Leigh Trevor Canham
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Publication number: 20020096688Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).Type: ApplicationFiled: January 22, 2002Publication date: July 25, 2002Applicant: The Secretary of State for Defence in Her Britannic Majesty's GovernmentInventors: Leigh Trevor Canham, Timothy Ingram Cox, Armando Loni, Andrew John Simons, Richard Simon Blacker
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Patent number: 6380550Abstract: An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes a heavily doped region (28) to provide an ohmic contact. The porous silicon region (22) is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device (10) has a rectifying p-n junction within the porous silicon region (22).Type: GrantFiled: September 17, 1997Date of Patent: April 30, 2002Assignee: The Secretary of State for Defence in Her Britannic Majesty's Goverment of the United Kingdom of Great Britain and Northern IrelandInventors: Leigh Trevor Canham, Timothy Ingram Cox, Armando Loni, Andrew John Simons, Richard Simon Blacker
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Patent number: 6369405Abstract: A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in 20% aqueous hydrofluoric acid to produce a layer (5) microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.Type: GrantFiled: April 26, 1994Date of Patent: April 9, 2002Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern IrelandInventors: Leigh-Trevor Canham, John Michael Keen, Weng Yee Leong
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Patent number: 6147359Type: GrantFiled: October 14, 1992Date of Patent: November 14, 2000Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern IrelandInventors: Leigh-Trevor Canham, John Michael Keen, Weng Yee Leong
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Patent number: 5914183Abstract: Porous semiconductor material in the form of at least partly crystalline silicon is produced with a porosity in excess of 90% determined gravimetrically, and voids, crazing and peeling are substantially not observable by scanning electron microscopy at a magnification of 7,000. The porous silicon is dried by supercritical drying. The silicon material has good luminescence properties together with good morphology and crystallinity.Type: GrantFiled: June 5, 1996Date of Patent: June 22, 1999Assignee: The Secretary of State for Defence in Her Brittanic Majesty's Government of the United Kingdom of Great Britain and Northern IrelandInventor: Leigh Trevor Canham
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Patent number: 5627382Abstract: A method of making semiconductor quantum wires, and a light emitting device employing such wires, employs a semiconductor wafer as starting material. The wafer is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer is anodized in 20% aqueous hydrofluoric acid to produce a layer 5 microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. When excited, the etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.Type: GrantFiled: June 1, 1995Date of Patent: May 6, 1997Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern IrelandInventors: Leigh-Trevor Canham, John M. Keen, Weng Y. Leong
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Patent number: 5358600Abstract: A method of making semiconductor quantum wires employs a semiconductor wafer (14) as starting material. The wafer (14) is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer (14) is anodised in 20% aqueous hydrofluoric acid to produce a layer (5) microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increase porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to from with diameter less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.Type: GrantFiled: July 26, 1993Date of Patent: October 25, 1994Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern IrelandInventors: Leigh-Trevor Canham, John M. Keen, Weng Y. Leong
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Patent number: 5348618Abstract: A method of making semiconductor quantum wires employs a semiconductor wafer as starting material. The wafer is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer is anodised in 20% aqueous hydrofluoric acid to produce a layer microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. The etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.Type: GrantFiled: June 4, 1992Date of Patent: September 20, 1994Assignee: The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern IrelandInventors: Leigh-Trevor Canham, John M. Keen, Weng Y. Leong