Abstract: An integrated optical transceiver, comprising a laser component, comprising an array of VCSEL diodes formed on a laser diode substrate; a laser driving component, comprising laser diode driving circuitry formed on a laser driving circuitry substrate; a photodiode component, comprising an array of photodiodes formed on a photodiode substrate; and a photodiode driving component, comprising photodiode driving circuitry formed on a photodiode driving circuitry substrate; a first heat sink comprising a connected piece of material to transport excess heat away from the integrated optical transceiver and connected to both the laser and photodiode driving components; and an electrically insulating material separating the photodiode substrate from the first heat sink and being air or dielectric material with a relative dielectric constant ?<10, wherein the electrically insulating material provides a gap having an effective electrical distance of at least 80 ?m between the photodiode substrate and the first heat sin

Abstract: An integrated optical transceiver, comprising a laser component, comprising an array of VCSEL diodes formed on a laser diode substrate; a laser driving component, comprising laser diode driving circuitry formed on a laser driving circuitry substrate; a photodiode component, comprising an array of photodiodes formed on a photodiode substrate; and a photodiode driving component, comprising photodiode driving circuitry formed on a photodiode driving circuitry substrate; a first heat sink comprising a connected piece of material to transport excess heat away from the integrated optical transceiver and connected to both the laser and photodiode driving components; and an electrically insulating material separating the photodiode substrate from the first heat sink and being air or dielectric material with a relative dielectric constant ?<10, wherein the electrically insulating material provides a gap having an effective electrical distance of at least 80 ?m between the photodiode substrate and the first heat si

Abstract: An electrical connection interface is provided. The electrical connection interface includes a first ground plane layer, a second ground plane layer, a first substrate and a second substrate. The second ground plane layer is positioned to overlap the first ground plane layer. The first substrate includes a first substrate conductive lead with a first interface region connected to and electrically insulated from the first ground plane layer. The second substrate includes a second substrate conductive lead with a second interface region connected to the first substrate conductive lead and the second ground plane layer. The second substrate conductive lead is electrically insulated from the second ground plane layer.

Abstract: An electrical connection interface is provided. The electrical connection interface includes a first ground plane layer, a second ground plane layer, a first substrate and a second substrate. The second ground plane layer is positioned to overlap the first ground plane layer. The first substrate includes a first substrate conductive lead with a first interface region connected to and electrically insulated from the first ground plane layer. The second substrate includes a second substrate conductive lead with a second interface region connected to the first substrate conductive lead and the second ground plane layer. The second substrate conductive lead is electrically insulated from the second ground plane layer.

Abstract: An optical device has a back facet (27) and a front facet (29; 29?) opposite to each other, and includes a laser (23) adapted to emit light essentially perpendicular to said back facet; a modulator (25; 51; 55) having an input end and an output end (35; 53; 57), respectively, and adapted to receive and modulate light emitted from said laser and to output modulated light at said modulator output end; and a window region (33) arranged between said modulator output end and said device front facet, said device being further arranged such that modulated light output from said modulator is transmitted through said window region and is output from said device through said device front facet. The modulator is bent such that the modulated light output from said modulator is propagating essentially in a direction (34), which is angled (?; ?) with respect to the normal (Z; 71) of said device front facet.

Abstract: An electro-absorption modulator is tunable along with the laser. Tuning the electro-absorption modulator permits optimum detuning to be maintained, even though the laser is tuned over several tens of nm. One approach to tuning the electro-absorption modulator is to heat the electro-absorption modulator. A semiconductor laser device includes a semiconductor laser positioned on a substrate. The semiconductor laser produces output light that is tunable over a tuning range between a first wavelength and a second wavelength. An electro-absorption modulator is disposed to modulate the light produced by the semiconductor laser. The operating temperature of the electro-absorption modulator is tunable so as to maintain constant detuning over at least a portion of the tuning range.

Abstract: An optical device has a back facet (27) and a front facet (29; 29′) opposite to each other, and includes a laser (23) adapted to emit light essentially perpendicular to said back facet; a modulator (25; 51; 55) having an input end and an output end (35; 53; 57), respectively, and adapted to receive and modulate light emitted from said laser and to output modulated light at said modulator output end; and a window region (33) arranged between said modulator output end and said device front facet, said device being further arranged such that modulated light output from said modulator is transmitted through said window region and is output from said device through said device front facet. The modulator is bent such that the modulated light output from said modulator is propagating essentially in a direction (34), which is angled (&agr;; &dgr;) with respect to the normal (Z; 71) of said device front facet.

Abstract: Electro-absorption modulator (EAM), of the kind that includes a waveguide, for modulation of light, comprising a waveguide core, a waveguide cladding (42, 43, 52, 53), and an electrode (45, 55), the modulator being arranged to modulate light launched into the modulator as a response to a voltage being applied on the electrode. According to the invention, the width and/or the thickness of the waveguide core (41, 51) are/is varying along the length of the modulator. The width/thickness is smaller in the portion of the modulator where the light is intended to be input, for the purpose of reducing the absorption of the modulator there. A method in manufacturing of the modulator may utilize a tapered photolithography mask (46).

Abstract: The present invention relates to a method for manufacturing a plurality of semiconductor photonic integrated circuit comprising at least a laser and a modulator connected optically to one another. Each laser and modulator has a waveguide layer being implemented on a single substrate, where said modulator is formed by use of a selective area growth technique. By providing modulator masking parts with selectable width to compensate a difference in band-gap energy in the waveguide layer between the laser and the modulator a approximate uniform difference in band-gap energy between the optically connected laser and modulator may be obtained.

Abstract: A method for coupling radiation in an infrared detector of the kind which uses quantum wells that are comprised of thin layers of, e.g., gallium arsenide (GaAs) surrounded by aluminum gallium arsenide (AlGaAs). The invention is characterized in that a two-dimensional crossed grating (6), a so-called 2-D grating, is constructed on the top of the detector mesa of the detector on the side opposite the surface through which incident light (5) enters the detector. The grating (6) is caused to spread the incident light in different directions. According to one preferred embodiment, the detector also includes a cladding layer (14) which, together with the crossed grating, forms a wave guide.