Abstract: An optical splitter device and method are provided. The device can include a waveguide having walls forming a large hollow core. The waveguide can be configured to direct an optical signal through the large hollow core. An optical tap can be formed through at least one wall of the waveguide. In addition, a prism can be located in the large hollow core of the waveguide and aligned with the optical tap. A splitter coating can be provided on the prism to direct a portion of the optical signal outside of the waveguide through the optical tap.

Abstract: An optical splitter device and method are provided. The device can include a waveguide having walls forming a large hollow core. The waveguide can be configured to direct an optical signal through the large hollow core. An optical tap can be formed through at least one wall of the waveguide. In addition, a prism can be located in the large hollow core of the waveguide and aligned with the optical tap. A splitter coating can be provided on the prism to direct a portion of the optical signal outside of the waveguide through the optical tap.

Abstract: A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.

Abstract: A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.

Abstract: A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.

Abstract: A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.

Abstract: A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.

Abstract: A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with a dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.

Abstract: A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.

Abstract: A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with a dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.

Abstract: A post-etch treatment for enhancing and stabilizing the photoluminescence (PL) from a porous silicon (PS) substrate is outlined. The method includes treating the PS substrate with an aqueous hydrochloric acid solution and then treating the PS substrate with an alcohol. Alternatively, the post-etch method of enhancing and stabilizing the PL from a PS substrate includes treating the PS substrate with an aqueous hydrochloric acid and alcohol solution. Further, the PL of the PS substrate can be enhanced by treating the PS substrate with a dye. Furthermore, the PS substrate can be metallized to form a PS substrate with resistances ranging from 20 to 1000 ohms.