Abstract: A sheet wafer furnace has a chamber having an opening, and a crucible, within the chamber, and spaced from the opening. The furnace also has a puller configured to pull a sheet wafer from molten material in the crucible and through the opening in the chamber, and a seal across the opening of the chamber.

Abstract: A method of forming a sheet wafer 1) passes at least two filaments through a molten material to produce a partially formed sheet wafer, 2) directs a cooling fluid at a flow rate toward the partially formed sheet wafer to convectively cool a given portion of the partially formed sheet wafer, and 3) monitors the thickness of the given portion of the partially formed sheet wafer. To ensure appropriate thicknesses of the wafer, the method controls the flow rate of the cooling fluid as a function of the thickness of the given portion of the partially formed sheet wafer.

Abstract: A sheet wafer has a generally flat, generally rectangular shaped body with a length and a width, and first and second filaments generally perpendicular to the width of the body. The first and second filaments are at least partially encapsulated by a wafer material and, together with the wafer material, form at least a portion of the body. The width is between about 145 mm and 165 mm.

Abstract: A method and apparatus for forming a sheet wafer melts feedstock material in a crucible that is part of a crystal growth furnace, passes a plurality of filaments through the crucible to form a sheet wafer, and cuts a portion of the sheet wafer to form a smaller sheet wafer. The method and apparatus then determine the weight of the smaller sheet wafer, and control the temperature of the melted feedstock material (e.g., by controlling crucible temperature or by interfacing with another temperature control system) as a function of the determined weight.

Abstract: A method of forming a sheet wafer melts feedstock material in a crucible that is part of a crystal growth furnace, and passes a plurality of filaments through the crucible to form a (un-separated) sheet wafers. A plurality of sheet wafers may be formed in different lanes in the crucible. One or more vision systems is used, during growth, to determine if a sheet wafer has a defective condition. If a defect is detected, then any of a variety of corrective actions may be taken, such as activating a cutting device to remove at least a portion of the sheet wafer, assessing the defect and grading a portion of the sheet wafer (e.g., for sorting based on grade), and/or producing an indicia. In a multiple-lane embodiment, a defect may be attended to in one lane while sheet growth continues in one or more other lanes.

Abstract: A system for producing a crystal formed from a material with impurities has a crucible for containing the material. The crucible has, among other things, a crystal region for forming the crystal, an introduction region for receiving the material, and a removal region for removing a portion of the material. The crucible is configured to produce a generally one directional flow of the material (in liquid form) from the introduction region toward the removal region. This generally one directional flow causes the removal region to have a higher concentration of impurities than the introduction region.

Abstract: A furnace for growing a ribbon crystal has a channel for growing a ribbon crystal at a given rate in a given direction, and a separating mechanism for separating a portion from the growing ribbon crystal. At least a part of the separating mechanism moves at about the given rate and in about the given direction while separating the portion from the growing ribbon crystal.