Abstract: Embodiments herein include semiconductor structures that may include a first field-effect transistor (FET) comprising a first source/drain (S/D), a second FET comprising a second S/D squarely above the first S/D, and a shared S/D contact. The shared S/D may include a recessed portion between the first S/D and the second S/D, a side portion above the recessed portion, and a top portion above the second S/D. The side portion may contact a lateral side of the second S/D.

Abstract: A semiconductor structure is provided that includes a gate structure that is wired to a backside signal line through a backside gate contact extension and a backside skip-level through via. The backside skip-level through via has a dielectric spacer located on a sidewall thereof and a portion of the backside skip-level through via is positioned between a pair of backside power rails that are located in a first backside metal level that is located beneath a second backside metal level that includes the backside signal line.

Abstract: Direct measurement of a latch timing window includes, for each of a plurality of predetermined delay times: providing a first signal to a data input of a first latch of a ring oscillator circuit via a delay block configured to delay the first signal by the predetermined delay time; providing the first signal to a first logic clock buffer (LCB); generating a clock signal by the first LCB responsive to receiving the first signal; providing the clock signal to a clock input of the first latch; and determining from an output of the ring oscillator circuit that the ring oscillator circuit is in either an oscillating state or a non-oscillating state. At least one timing window parameter for the first latch is determined based on one or more of the plurality of delay times that are associated with an oscillating state of the ring oscillator circuit.

Abstract: Embodiments for power generation include defining a power tile within a power distribution network having a grid of power rails, the power tile having logic gates, and applying an initial power grid pattern from a plurality of power grid patterns for the power tile such that initial power grid pattern relates to timing characteristics of the logic gates of the power tile. The power grid patterns each have a different number of connectors connecting one power rail to another power rail in the grid of power rails. A subsequent power grid pattern is selected from the power grid patterns for the power tile such that the subsequent power grid pattern meets a threshold condition for the timing characteristics of the logic gates of the power tile. The timing characteristics for the logic gates are determined based on a voltage drop associated with the subsequent power grid pattern.

Abstract: Aspects of the invention include a computer-implemented method of chip design. The computer-implemented method of chip design include establishing an architecture with alternating rows of differently colored chip-level shapes. Cells are constrained to be rectangular with restricted widths. Constraint-observing parent and child cells are generated and respectively include boundaries with alternating rows of differently colored cell-level shapes for disposition in the architecture. The parent cell is positioned in the architecture such that the cell-level shapes thereof exhibit row and color alignment with the chip-level shapes. Child cells exhibiting uni-axial or multi-axial reflectivity are instantiated in the parent cell. A color solution is instantiated for each child cell in the parent cell such that cell-level shapes of the child cells exhibit row and color alignment with the cell-level shapes of the parent cell.

Abstract: Method and structures for shared (dual) sources for a single device in semiconductor devices such as very-large-scale integration (VLSI) devices. The shared-source improves or increases a current that passes through the device (e.g., to a drain region associated with the shared-source), which in turn increases a performance of the device. Example improvements may include a delay improvement of the device and associated logic paths and/or a power improvement for the device. The method includes operations for design improvements during a design process by implementing shared-sources in a semiconductor device design.

Abstract: Apparatus for mitigating latch-up within semiconductor devices. A semiconductor device includes a first conductor, a second conductor, and a first gate conductor. The first conductor extends in a first direction, receives a first power supply signal, and is connected to a first electrode. The second conductor extends in the first direction, receives a second power supply signal different from the first power supply signal, and is connected to a second electrode. The first conductor is offset from the second conductor in a second direction perpendicular to the first direction in a top-down view to mitigate formation of parasitic devices within the semiconductor device electrically connecting the first conductor with the second conductor. The first gate conductor is disposed adjacent to the first conductor and the second conductor, is disposed on the first electrode and the second electrode, and receives an input signal.

Abstract: Method and apparatus for generating an updated power delivery network. Generating the power delivery network includes determining power characteristics for a power delivery network of a circuit design based on logic cells of the circuit design. The power delivery network includes power wires and power staples connecting pairs of the power wires to each other. Further a first one or more of the power staples is remove from the power delivery network based on the power characteristics. Signal wires for the logic cells are routed after removing the first one or more of the power staples. Routing the signal wires includes routing a first signal wire of the signal wires in a routing track corresponding to the first one or more of the power staples.

Abstract: Aspects of the invention include systems and methods for implementing a CMOS circuit design that uses a sea-of-gates fill methodology to provide latch-up avoidance. A non-limiting example computer-implemented method includes identifying a fill cell in the circuit design. The fill cell can include a power rail, a ground rail, and a field-effect transistor (FET) electrically coupled to the power rail through a via. The method can include disconnecting the via from the power rail and moving the via to a disconnected node in the fill cell. Moving the via decouples a source or drain of the fill cell from a well of the fill cell, preventing latch-up while maintaining via and metal shape density.

Abstract: Embodiments for power generation include defining a power tile within a power distribution network having a grid of power rails, the power tile having logic gates, and applying an initial power grid pattern from a plurality of power grid patterns for the power tile such that initial power grid pattern relates to timing characteristics of the logic gates of the power tile. The power grid patterns each have a different number of connectors connecting one power rail to another power rail in the grid of power rails. A subsequent power grid pattern is selected from the power grid patterns for the power tile such that the subsequent power grid pattern meets a threshold condition for the timing characteristics of the logic gates of the power tile. The timing characteristics for the logic gates are determined based on a voltage drop associated with the subsequent power grid pattern.

Abstract: Aspects of the invention include systems and methods for implementing a CMOS circuit design that uses a sea-of-gates fill methodology to provide latch-up avoidance. A non-limiting example computer-implemented method includes identifying a fill cell in the circuit design. The fill cell can include a power rail, a ground rail, and a field-effect transistor (FET) electrically coupled to the power rail through a via. The method can include disconnecting the via from the power rail and moving the via to a disconnected node in the fill cell. Moving the via decouples a source or drain of the fill cell from a well of the fill cell, preventing latch-up while maintaining via and metal shape density.

Abstract: Aspects of the invention include a computer-implemented method of chip design. The computer-implemented method of chip design include establishing an architecture with alternating rows of differently colored chip-level shapes. Cells are constrained to be rectangular with restricted widths. Constraint-observing parent and child cells are generated and respectively include boundaries with alternating rows of differently colored cell-level shapes for disposition in the architecture. The parent cell is positioned in the architecture such that the cell-level shapes thereof exhibit row and color alignment with the chip-level shapes. Child cells exhibiting uni-axial or multi-axial reflectivity are instantiated in the parent cell. A color solution is instantiated for each child cell in the parent cell such that cell-level shapes of the child cells exhibit row and color alignment with the cell-level shapes of the parent cell.

Abstract: Aspects of the invention include systems and methods configured to provide hierarchical circuit designs that makes use of a color decomposition of library cells having boundary-aware color selection. A non-limiting example computer-implemented method includes placing a plurality of shapes within a hierarchical level of a chip design. The plurality of shapes can include a top boundary shape, a bottom boundary shape, one or more center boundary shapes, and one or more internal shapes. A hierarchical hand-off region is constructed by pinning the top boundary shape to a first mask, pinning the bottom boundary shape to a second mask, and pinning the one or more center boundary shapes to a same mask. The same mask is selected from one of the first mask and the second mask.

Abstract: Methods, systems and computer program products for providing flexible constraint-based logic cell placement are provided. Aspects include determining a cell placement restriction rule that specifies an offset requirement between a first type of logic cell and a second type of logic cell. Responsive to placing a first cell that is the first type of logic cell within a semiconductor layout, aspects include tagging the first cell with the cell placement restriction rule. Aspects also include placing a second cell that is the second type of logic cell at an initial position within the semiconductor layout. Responsive to determining that the initial position of the second cell violates the cell placement restriction rule, aspects include repositioning the first cell or the second cell to a modified position within the semiconductor layout such that the modified position satisfies the cell placement restriction rule.

Abstract: A method and system for improving the performance of a computer in identifying and mitigating electromigration violations of a semiconductor device. A set of library gates is obtained and parasitic layout extraction is performed for each gate in the set of library gates to generate an extracted netlist. One or more passes of an electromigration analysis of the extracted netlist are performed to characterize each gate over a set of input parameters and to generate a maximum slew rate (MAX_SLEW) table and a maximum capacitance (MAX_CAP) table.

Abstract: Methods, systems and computer program products for providing flexible constraint-based logic cell placement are provided. Aspects include determining a cell placement restriction rule that specifies an offset requirement between a first type of logic cell and a second type of logic cell. Responsive to placing a first cell that is the first type of logic cell within a semiconductor layout, aspects include tagging the first cell with the cell placement restriction rule. Aspects also include placing a second cell that is the second type of logic cell at an initial position within the semiconductor layout. Responsive to determining that the initial position of the second cell violates the cell placement restriction rule, aspects include repositioning the first cell or the second cell to a modified position within the semiconductor layout such that the modified position satisfies the cell placement restriction rule.

Abstract: A method and system for improving the performance of a computer in identifying and mitigating electromigration violations of a semiconductor device. A set of library gates is obtained and parasitic layout extraction is performed for each gate in the set of library gates to generate an extracted netlist. One or more passes of an electromigration analysis of the extracted netlist are performed to characterize each gate over a set of input parameters and to generate a maximum slew rate (MAX_SLEW) table and a maximum capacitance (MAX_CAP) table.

Abstract: A system for topology selection to minimize leakage power during synthesis, wherein the system is configured to receive a circuit model that has one or more circuit gates. The system is further configured to receive a library having one or more logic gates, wherein each logic gate has a topology and the leakage sensitivities for each of the topologies is calculated. The system is then configured to synthesize a new circuit model by selecting one or more of the topologies based on its leakage sensitivities, wherein the new circuit model has reduced current leakage.

Abstract: A scan converter incorporating a polygon span interpolator with main memory Z buffering. The span interpolator is initiated by instructions from a central processing unit (CPU), and when initiated, the span interpolator inerpolates input color and Z values in parallel. The span interpolator has its own state machine and can, once initiated, operate independent of the clock states of the CPU so that the CPU may process other data. Also, rather than using a dedicated memory as the Z buffer, the Z buffer shares main memory with the CPU. This allows the CPU to send pretranslated initial Z buffer addresses to the span interpolator when the span interpolator is initiated. Subsequent Z buffer addresses and color data addresses may be calculated in parallel with the input color and Z interpolations.