Abstract: The invention relates to a charge-coupled device in which the charge transport takes place in the form of majority charge carriers via the bulk of a surface layer of the first conductivity type which forms a p-n junction with a substrate of the second conductivity type. The comparatively thick and high-ohmic surface layer has a comparatively thin low-ohmic buried zone of the first conductivity type which adjoins the said p-n junction. The buried zone forms a buffer layer against the depletion zone belonging to the p-n junction. Without detrimentally influencing the transport properties, a low-ohmic substrate may be used, which has important advantages in particular with respect to the leakage currents.

Abstract: The invention relates to a charge-coupled device with charge transport in the bulk of the semiconductor body. The semiconductor layer in which the transport takes place comprises a comparatively low-ohmic surface zone present below the electrodes and an adjoining comparatively high-ohmic layer present below the surface zone. A comparatively large number of charge carriers can be concentrated in the surface zone with a comparatively low clock voltage. The last fraction of charge carriers to be transferred which mainly determine the transport rate can be transported from one storage space to the next storage space via the high-ohmic layer at a large distance from the electrodes and hence in a very short time.

Abstract: A charge transfer device in which information in the form of packets of majority charge carriers can be transported through the bulk of a semiconductor layer via charge storage sites, in which the semiconductor regions belonging to the storage sites have a more highly and a lower doped part of the same conductivity type and in which means are present to introduce packets of background charge, so that each packet of information-representing charge can be transported together with a packet of background charge as a collective charge packet.

Abstract: A semiconductor device comprising a surface layer of one conductivity type provided on a support and separated therefrom by a junction, said surface layer defining a surface and comprising island-insulating means in the form of an electrode pattern at the surface and which surrounds at least an island-shaped part of the surface layer comprising a component. The electrode pattern is separated from the surface layer by a barrier junction and is to induce electric fields in the surface layer to form a depletion region that is below the electrode pattern and extends throughout the thickness of the surface layer, an electric connection for draining leakage currents, is at part of the surface layer present at the edge of the surface and outside the pattern.