Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments, the rear electrode comprises a reflective film (e.g., of Mo or the like) including one or more layers provided on an interior surface of a rear glass substrate of the photovoltaic device. In certain example embodiments, the interior surface(s) of the rear glass substrate and/or reflective film is/are textured so as to provide desirable electrical and reflective characteristics. The rear glass substrate and textured rear electrode/reflector are used in a photovoltaic device (e.g., CIS or CIGS solar cell) where an active semiconductor film is provided between the rear electrode/reflector and a front electrode(s).

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments, the rear electrode comprises a reflective film (e.g., of Mo or the like) including one or more layers provided on an interior surface of a rear glass substrate of the photovoltaic device. In certain example embodiments, the interior surface(s) of the rear glass substrate and/or reflective film is/are textured so as to provide desirable electrical and reflective characteristics. The rear glass substrate and textured rear electrode/reflector are used in a photovoltaic device (e.g., CIS or CIGS solar cell) where an active semiconductor film is provided between the rear electrode/reflector and a front electrode(s).

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments, the rear electrode comprises a reflective film (e.g., of Mo or the like) including one or more layers provided on an interior surface of a rear glass substrate of the photovoltaic device. In certain example embodiments, the interior surface(s) of the rear glass substrate and/or reflective film is/are textured so as to provide desirable electrical and reflective characteristics. The rear glass substrate and textured rear electrode/reflector are used in a photovoltaic device (e.g., CIS or CIGS solar cell) where an active semiconductor film is provided between the rear electrode/reflector and a front electrode(s).

Abstract: A first surface mirror includes a reflective layer and one or more dielectric layers. In certain example embodiments, a silicon metal oxide (e.g., silicon aluminum oxide) inclusive nucleation layer(s) is provided above and/or below the reflective layer in order to improve durability of the first surface mirror.

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.

Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments, the rear electrode comprises a reflective film (e.g., of Mo or the like) including one or more layers provided on an interior surface of a rear glass substrate of the photovoltaic device. In certain example embodiments, the interior surface(s) of the rear glass substrate and/or reflective film is/are textured so as to provide desirable electrical and reflective characteristics. The rear glass substrate and textured rear electrode/reflector are used in a photovoltaic device (e.g., CIS or CIGS solar cell) where an active semiconductor film is provided between the rear electrode/reflector and a front electrode(s).