Abstract: Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.

Abstract: Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.

Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

Abstract: Methods and apparatus for a processing chamber are provided herein. The apparatus includes, for example, an inner volume defined in the processing chamber; a first sensor assembly coupled to a surface located in the inner volume of the processing chamber and including a first electrode configuration configured to measure an electrical characteristic associated with a film deposited within the inner volume of the processing chamber; and a second sensor assembly coupled to the surface located in the inner volume of the processing chamber in relative proximity to the first sensor assembly and including a second electrode configuration, different from the first electrode configuration, configured to measure the same electrical characteristic as the first electrode configuration.

Abstract: The present disclosure generally relates to a method and apparatus for determining a metric related to erosion of a ring assembly used in an etching within a plasma processing chamber. In one example, the apparatus is configured to obtain a metric indicative of erosion on an edge ring disposed on a substrate support assembly in a plasma processing chamber. A sensor obtains the metric for the edge ring. The metric correlates to the quantity of erosion in the edge ring. In another example, the ring sensor may be arranged outside of a periphery of a substrate support assembly. The metric may be acquired by the ring sensor through a plasma screen.